Power Transistor (15V, 0.5A) 2SD1757K Features VCE(sat). (Ty

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Power Transistor (15V, 0.5A) 2SD1757K Features VCE(sat). (Ty

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2SD1757K
Power Transistor (15V, 0.5A)
2SD1757K
Features VCE(sat). (Typ.8mV IC/IB 10/1mA) Optimal muting.
External dimensions (Unit
Absolute maximum ratings (Ta=25°C)
0.15
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO Tstg
Limits +150
Unit
0.3to0.6
0to0.1
Each lead same dimensions
0.95 0.95
ROHM SMT3 EIAJ SC-59
Emitter Base Collector
Packaging specifications
Type Package Marking Code Basic ordering unit (pieces)
Denotes
2SD1757K SMT3 T146 3000
Electrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) Min. Typ. Max. Unit IC=50µA IC=1mA IE=50µA VCB=20V VEB=4V IC/IB=500mA/50mA VCE/IC=3V/100mA VCE=5V IE=-50mA f=100MHz VCB=10V IE=0A f=1MHz Conditions
Rev.A
2SD1757K
Electrical characteristics curves
1000
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Ta=25°C VCE=6V
800µA
700µA
CURRENT GAIN
Tc=25°C IB=1mA 900µA
1000
Ta=25°C
VCE=5V
VCE=1V
600µA
500µA
400µA
300µA
200µA 100µA IB=0µA
1000
BASE EMITTER VOLTAGE
COLLECTOR EMITTER VOLTAGE
COLLECTOR CURRENT (mA)
Fig.1 Ground emitter propagation characteristics
Fig.2 Ground emitter output characteristics
Fig.3 current gain collector current
COLLECTOR SATURATION VOLTAGE VCE(sat) (mV)
1000
CURRENT GAIN
VCE=5V Ta=100°C 25°C
1000
IC/IB=50
COLLECTOR SATURATION VOLTAGE VCE(sat) (mV)
Ta=25°C
1000
lC/lB=10
25°C
Ta=100°C
-55°C
-55°C
1000
1000
1000
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Fig.4 current gain collector current(
Fig.5 Collector-emitter saturation voltage collector current
Fig.6 Collector-emitter saturation voltage collector current
COLLECTOR SATURATION VOLTAGE VCE(sat) (mV)
1000
COLLECTOR SATURATION VOLTAGE VCE(sat) (mV)
25°C
25°C
TRANSITION FREQUENCY (MHz)
lC/lB=20
1000
lC/lB=50
Ta=25°C VCE=5V
Ta=100°C
Ta=100°C
-55°C
-55°C
-100 -200 -500
1000
1000
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
EMITTER CURRENT (mA)
Fig.7 Collector-emitter saturation voltage collector current
Fig.8 Collector-emitter saturation voltage collector current
Fig.9 Gain bandwidth product emitter current
Rev.A
2SD1757K
COLLECTOR OUTPUT CAPACITANCE (pF)
EMITTER INPUT CAPACITANCE (pF)
Ta=25°C f=1MHz IE=0A
RESISTANCE
Ta=25°C f=1MHz IC=0A
Ta=25°C
COLLECTOR BASE VOLTAGE
1000
EMITTER BASE VOLTAGE
BASE CURRENT (µA)
Fig.10 Collector output capacitance collector-base voltage
Fig.11 Emitter input capacitance emitter-base voltage
Fig.12 "ON" resistance base current characteristics
input f=1kHz 100mVrms
output
Fig.13 "ON" resistance measurement circuit
Rev.A
Appendix
Notes
technical content pages this document reproduced form transmitted means without prior permission ROHM CO.,LTD. contents described herein subject change without notice. specifications product described this document reference only. Upon actual use, therefore, please request that specifications separately delivered. Application circuit diagrams circuit constants contained herein shown examples standard operation. Please careful attention peripheral conditions when designing circuits deciding upon circuit constants set. data, including, limited application circuit diagrams information, described herein intended only illustrations such devices specifications such devices. ROHM CO.,LTD. disclaims warranty that such devices shall free from infringement third party's intellectual property rights other proprietary rights, further, assumes liability whatsoever nature event such infringement, arising from connected with related such devices. Upon sale such devices, other than buyer's right such devices itself, resell otherwise dispose same, express implied right license practice commercially exploit intellectual property rights other proprietary rights owned controlled ROHM CO., LTD. granted such buyer. Products listed this document antiradiation design.
products listed this document designed used with ordinary electronic equipment devices (such audio visual equipment, office-automation equipment, communications devices, electrical appliances electronic toys). Should intend these products with equipment devices which require extremely high level reliability malfunction with would directly endanger human life (such medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers other safety devices), please sure consult with sales representative advance. About Export Control Order Japan Products described herein objects controlled goods Annex (Item Export Trade Control Order Japan. case export from Japan, please confirm applies "objective" criteria "informed" MITI clause) basis "catch controls Non-Proliferation Weapons Mass Destruction.
Appendix1-Rev1.1

Power Transistor (15V, 0.5A) 2SD1757K Features VCE(sat). (Ty

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