2N6109 2N6292 Preferred Devices Complementary Silicon Plastic Pow

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2N6109 2N6292 Preferred Devices Complementary Silicon Plastic Pow

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2N6107, 2N6109, 2N6111; 2N6288, 2N6292
2N6109 2N6292 Preferred Devices
Complementary Silicon Plastic Power Transistors
These devices designed general-purpose amplifier switching applications.
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Current Gain Specified Amperes
30-150 2N6111, 2N6288 (Min) Devices Collector-Emitter Sustaining Voltage VCEO(sus) (Min) 2N6111, 2N6288 (Min) 2N6109 (Min) 2N6107, 2N6292 High Current Gain Bandwidth Product (Min) mAdc 2N6288, (Min) mAdc 2N6107, TO-220AB Compact Package Pb-Free Packages Available*
AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON VOLTS, WATTS
MARKING DIAGRAM
TO-220AB CASE 221A STYLE 2N6xxxG AYWW
MAXIMUM RATINGS (Note
Rating Collector-Emitter Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 Collector-Base Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 Emitter-Base Voltage Collector Current Continuous Peak Base Current Total Power Dissipation 25_C Derate above 25_C Operating Storage Junction Temperature Range Tstg 0.32 +150 W/°C Symbol VCEO Value Unit
2N6xxx Specific Device Code Table Page Pb-Free Package Assembly Location Year Work Week
ORDERING INFORMATION
detailed ordering, marking, shipping information package dimensions section page this data sheet.
Preferred devices recommended choices future best overall value.
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Symbol RqJC 3.125 Unit _C/W
Stresses exceeding Maximum Ratings damage device. Maximum Ratings stress ratings only. Functional operation above Recommended Operating Conditions implied. Extended exposure stresses above Recommended Operating Conditions affect device reliability. Indicates JEDEC Registered Data. *For additional information Pb-Free strategy soldering details, please download Semiconductor Soldering Mounting Techniques Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev.
Publication Order Number: 2N6107/D
2N6107, 2N6109, 2N6111; 2N6288, 2N6292
POWER DISSIPATION (WATTS)
CASE TEMPERATURE (°C)
Figure Power Derating
ELECTRICAL CHARACTERISTICS 25_C unless otherwise noted) (Note
Characteristic CHARACTERISTICS Symbol Unit Collector-Emitter Sustaining Voltage (Note mAdc, VCEO(sus) 2N6111, 2N6288 2N6109 2N6107, 2N6292 Collector Cutoff Current (VCE Vdc, (VCE Vdc, (VCE Vdc, ICEO mAdc 2N6111, 2N6288 2N6109 2N6107, 2N6292 Collector Cutoff Current (VCE Vdc, VEB(off) Vdc) (VCE Vdc, VEB(off) Vdc) (VCE Vdc, VEB(off) Vdc) (VCE Vdc, VEB(off) Vdc, 150_C) (VCE Vdc, VEB(off) Vdc, 150_C) (VCE Vdc, VEB(off) Vdc, 150_C) Emitter Cutoff Current (VBE Vdc, ICEX mAdc 2N6111, 2N6288 2N6109 2N6107, 2N6292 2N6111, 2N6288 2N6109 2N6107, 2N6292 mAdc IEBO mAdc CHARACTERISTICS (Note Current Gain Adc, Vdc) Adc, Vdc) Adc, Vdc) Adc, Vdc) 2N6107, 2N6292 2N6109 2N6111, 2N6288 Devices Collector-Emitter Saturation Voltage Adc, Adc) Base-Emitter Voltage Adc, Vdc) VCE(sat) VBE(on) DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (Note mAdc, Vdc, ftest MHz) 2N6288, 2N6107, Output Capacitance (VCB Vdc, MHz) Small-Signal Current Gain Adc, Vdc, kHz) Indicates JEDEC Registered Data. Pulse Test: Pulse Width Duty Cycle 2.0%. |hfe| ftest
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2N6107, 2N6109, 2N6111; 2N6288, 2N6292
-9.0 DUTY CYCLE 1.0% SCOPE
VARIED OBTAIN DESIRED CURRENT LEVELS
MUST FAST RECOVERY TYPE, 1N5825 USED ABOVE MSD6100 USED BELOW
Figure Switching Time Test Circuit
TIME 0.07 0.05 0.03 0.02 0.07 25°C IC/IB
VBE(off)
COLLECTOR CURRENT (AMP)
Figure Turn-On Time
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.07 0.05 0.03 0.02 0.01 0.01
0.05 0.02 0.01 SINGLE PULSE 0.02 0.05 ZqJC(t) r(t) RqJC RqJC 3.125°C/W CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME TJ(pk) P(pk) ZqJC(t) TIME (ms) P(pk)
DUTY CYCLE, t1/t2
Figure Thermal Response
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2N6107, 2N6109, 2N6111; 2N6288, 2N6292
CURRENT LIMIT SECONDARY BREAKDOWN LIMIT THERMAL LIMIT 25°C (SINGLE PULSE) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.15
There limitations power handling ability transistor: average junction temperature second breakdown. Safe operating area curves indicate limits transistor that must observed reliable operation; i.e., transistor must subjected greater dissipation than curves indicate. data Figure based TJ(pk) 150_C; variable depending conditions. Second breakdown pulse limits valid duty cycles provided TJ(pk) 150_C. TJ(pk) calculated from data Figure high case temperatures, thermal limitations will reduce power that handled values less than limitations imposed second breakdown.
COLLECTOR CURRENT (AMPS)
Figure Active-Region Safe Operating Area
0.07 0.05 0.07 25°C IC/IB
CAPACITANCE (pF) 25°C
TIME
COLLECTOR CURRENT (AMP)
REVERSE VOLTAGE (VOLTS)
Figure Turn-Off Time
Figure Capacitance
ORDERING INFORMATION
Device 2N6107 2N6107G 2N6109 2N6109G 2N6111 2N6111G 2N6288 2N6288G 2N6292 2N6292G 2N6292 2N6288 2N6111 2N6109 2N6107 Device Marking Package TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) Units Rail Units Rail Units Rail Units Rail Units Rail Shipping
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2N6107, 2N6109, 2N6111; 2N6288, 2N6292
PACKAGE DIMENSIONS
TO-220AB CASE 221A-09 ISSUE
SEATING PLANE
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. DIMENSION DEFINES ZONE WHERE BODY LEAD IRREGULARITIES ALLOWED. INCHES 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 2.04
STYLE
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PUBLICATION ORDERING INFORMATION
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2N6107/D

2N6109 2N6292 Preferred Devices Complementary Silicon Plastic Pow

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