2.5V Drive MOSFET RTF010P02 Structure Silicon P-channel MOSF

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2.5V Drive MOSFET RTF010P02 Structure Silicon P-channel MOSF

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RTF010P02
2.5V Drive MOSFET
RTF010P02
Structure Silicon P-channel MOSFET Dimensions (Unit
TUMT3
Features on-resistance. (570m 2.5V) High power package. High speed switching. voltage drive. (2.5V)
Gate Source Drain Abbreviated symbol
Applications DC-DC converter
Packaging specifications
Package Type RTF010P02 Code Basic ordering unit (pieces) Taping 3000
Equivalent circuit
PROTECTION DIODE BODY DIODE
Gate Source Drain
Absolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS Tstg Limits -0.4 +150 Unit
Total power dissipation Channel temperature Range Storage temperature
Pw10µs, Duty cycle1% Mounted ceramic board
Thermal resistance
Parameter Channel ambient
Mounted ceramic board.
Symbol Rth(ch-a)
Limits
Unit
0.2Max.
Rev.C
RTF010P02
Electrical characteristics (Ta=25°C)
Parameter Symbol Min. IGSS Gate-source leakage Drain-source breakdown voltage V(BR) Zero gate voltage drain current IDSS Gate threshold voltage (th) -0.7 Static drain-source on-state (on) resistance Forward transfer admittance Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time (on) Rise time Turn-off delay time (off) Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Typ.
Max. -2.0
Unit
Conditions VGS=±12V, VDS=0V -1mA, VGS=0V VDS= -20V, VGS=0V VDS= -10V, -1mA -1A, VGS= -4.5V -1A, VGS= -0.5A, VGS= -2.5V VDS= -10V, -0.5A VDS= -10V VGS=0V f=1MHz -0.5A -15V VGS= -4.5V RL=30 RG=10 -15V RL=15 VGS= -4.5V RG=10
Body diode characteristics (Source -drain) (Ta=25°C)
Parameter Forward voltage Symbol Min. Typ. Max. -1.2 Unit Conditions -0.4A, VGS=0V
Rev.C
RTF010P02
Electrical characteristic curves
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on) STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
VDS= -10V Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
10000 Ta=25°C Pulsed
10000
VGS= -4.5V Pulsed
DRAIN CURRENT
1000
VGS= -2.5V VGS= -4.0V VGS= -4.5V
1000
Ta=125°C Ta=75°C Ta=25°C -25°C
0.01
0.001
0.01
0.01
GATE-SOURCE VOLTAGE -VGS
DRAIN CURRENT
DRAIN CURRENT
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance Drain Current
Fig.3 Static Drain-Source On-State Resistance Drain Current
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
REVERSE DRAIN CURRENT
VGS= Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
10000
10000
VGS= -2.5V Pulsed
VGS=0V Pulsed
1000
Ta=125°C Ta=75°C Ta=25°C -25°C
1000
Ta=125°C Ta=75°C Ta=25°C -25°C
Ta=125°C Ta=75°C Ta=25°C -25°C
0.01
0.01
0.01
DRAIN CURRENT
DRAIN CURRENT
SOURCE-DRAIN VOLTAGE -VSD
Fig.4 Static Drain-Source On-State Resistance Drain Current
Fig.5 Static Drain-Source On-State Resistance Drain Current
Fig.6 Reverse Drain Current Source-Drain Voltage
1000
GATE-SOURCE VOLTAGE -VGS
SWITCHING TIME (ns)
Ta=25°C f=1MHz VGS=0V
10000
CAPACITANCE (pF)
1000
Ta=25°C VDD= -15V VGS= -4.5A RG=10 Pulsed
Ta=25°C VDD= -15V RG=10 Pulsed
Ciss
(off) (on)
Crss Coss
0.01
0.01
DRAIN-SOURCE VOLTAGE -VDS
DRAIN CURRENT
TOTAL GATE CHARGE (nC)
Fig.7 Typical Capacitance Drain-Source Voltage
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
Rev.C
RTF010P02
Measurement circuits
Pulse Width
D.U.T.
td(on) td(off) toff
Fig.10 Switching Time Measurement Circuit
Fig.11 Switching Waveforms
IG(Const.) D.U.T.
Charge
Fig.12 Gate Charge Measurement Circuit
Fig.13 Gate Charge Waveforms
Rev.C
Appendix
Notes
technical content pages this document reproduced form transmitted means without prior permission ROHM CO.,LTD. contents described herein subject change without notice. specifications product described this document reference only. Upon actual use, therefore, please request that specifications separately delivered. Application circuit diagrams circuit constants contained herein shown examples standard operation. Please careful attention peripheral conditions when designing circuits deciding upon circuit constants set. data, including, limited application circuit diagrams information, described herein intended only illustrations such devices specifications such devices. ROHM CO.,LTD. disclaims warranty that such devices shall free from infringement third party's intellectual property rights other proprietary rights, further, assumes liability whatsoever nature event such infringement, arising from connected with related such devices. Upon sale such devices, other than buyer's right such devices itself, resell otherwise dispose same, express implied right license practice commercially exploit intellectual property rights other proprietary rights owned controlled ROHM CO., LTD. granted such buyer. Products listed this document antiradiation design.
products listed this document designed used with ordinary electronic equipment devices (such audio visual equipment, office-automation equipment, communications devices, electrical appliances electronic toys). Should intend these products with equipment devices which require extremely high level reliability malfunction with would directly endanger human life (such medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers other safety devices), please sure consult with sales representative advance. About Export Control Order Japan Products described herein objects controlled goods Annex (Item Export Trade Control Order Japan. case export from Japan, please confirm applies "objective" criteria "informed" MITI clause) basis "catch controls Non-Proliferation Weapons Mass Destruction.
Appendix1-Rev1.1

2.5V Drive MOSFET RTF010P02 Structure Silicon P-channel MOSF

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