Drive RSS130N03 Structure Silicon N-channel External dimensi

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Drive RSS130N03 Structure Silicon N-channel External dimensi

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RSS130N03
Drive
RSS130N03
Structure Silicon N-channel External dimensions (Unit
SOP8
1.75
Features on-resistance. Built-in Protection Diode. Small Surface Mount Package (SOP8).
1pin mark
1.27
Application Power switching, DC/DC converter. Packaging specifications
Package Type RSS130N03 Code Basic ordering unit (pieces) Taping 2500
Each lead same dimensions
Equivalent circuit
Protection Diode. Body Diode.
Source Source Source Gate Drain Drain Drain Drain
protection diode included between gate source terminals protect diode against static electricity when product use.Use protection circuit when fixed voltage exceeded.
Absolute maximum ratings 25°C)
Parameter Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Source Current (Body Diode) Pulsed Continuous Pulsed
Symbol VDSS VGSS
Limits +150
Unit
Total Power Dissipation Channel Temperature Storage Temperature
Pw10µs, Duty cycle1% Mounted ceramic board.
Tstg
Thermal resistance
Parameter Channel Ambient
Mounted ceramic board.
Symbol (ch-a)
Limits 62.5
Unit
Rev.A
0.4Min.
RSS130N03
Electrical characteristics 25°C)
Parameter
Gate-Source Leakage Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage
Symbol
IGSS (BR)DSS IDSS (th) (on) Ciss Coss Crss td(on)
Min.
Typ.
2000
Max.
10.4 11.1
Unit
Test Conditions
VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=13A, VGS=10V ID=13A, VGS=4.5V ID=13A, VGS=4V ID=13A, VDS=10V VDS=10V VGS=0V f=1MHz ID=6.5A, VGS=10V RL=2.31 RG=10
VGS=5V ID=13A
Static Drain-Source On-State Resistance
Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Pulsed
td(off)
Body diode characteristics (Source-Drain) 25°C)
Parameter
Forward Voltage
Pulsed
Symbol
Min.
Typ.
Max.
Unit
Test Conditions Is=6.4A, VGS=0V
Rev.A
RSS130N03
Electrical characteristic curves
10000
Ciss
CAPACITANCE (pF)
GATE-SOURCE VOLTAGE:
Ta=25°C f=1MHz VGS=0V
10000
SWITCHING TIME (ns)
Coss
1000
1000
Ta=25°C VDD=15V VGS=10V RG=10 Pulsed
Ta=25 VDD=15V ID=13A RG=10 Pulsed
Crss
td(off)
td(on)
0.01
0.01
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
TOTAL GATE CHANGE: (nC)
Fig.1 Typical Capacitance Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE RDS(on)
Ta=25 pulsed
VGS=0V Pulsed
DREIN CURRENT ID(A)
SOURCE CURRENT
Ta=125°C 75°C 25°C -25°C
ID=13A
Ta=-25°C 25°C 75°C 125°C
ID=6.5A
0.01
VDS=10V Pulsed
0.001
0.01 SOURCE-DRAIN VOLTAGE VSD(A)
GATE SOURCE VOLTAGE VGS(V)
GATE-SOURCE VOLTAGE
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source On-State Resistance Gate-Source Voltage
Fig.6 Source-Current Source-Drain Voltage
STATIC DRAIN-SOURCE ON-STATE RESISTANCE RDS(on)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE RDS(on)
Ta=125°C 75°C 25°C -25°C
Ta=125°C 75°C 25°C -25°C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE RDS(on)
VGS=10V Pulsed
VGS=4.5V Pulsed
Ta=125°C 75°C 25°C -25°C
VGS=4V Pulsed
DRAIN CURRENT D(A)
DRAIN CURRENT D(A)
DRAIN CURRENT D(A)
Fig.7 Static Drain-Source On-State Resistance Drain Current
Fig.7 Static Drain-Source On-State Resistance Drain Current
Fig.7 Static Drain-Source On-State Resistance Drain Current
Rev.A
Appendix
Notes
technical content pages this document reproduced form transmitted means without prior permission ROHM CO.,LTD. contents described herein subject change without notice. specifications product described this document reference only. Upon actual use, therefore, please request that specifications separately delivered. Application circuit diagrams circuit constants contained herein shown examples standard operation. Please careful attention peripheral conditions when designing circuits deciding upon circuit constants set. data, including, limited application circuit diagrams information, described herein intended only illustrations such devices specifications such devices. ROHM CO.,LTD. disclaims warranty that such devices shall free from infringement third party's intellectual property rights other proprietary rights, further, assumes liability whatsoever nature event such infringement, arising from connected with related such devices. Upon sale such devices, other than buyer's right such devices itself, resell otherwise dispose same, express implied right license practice commercially exploit intellectual property rights other proprietary rights owned controlled ROHM CO., LTD. granted such buyer. Products listed this document antiradiation design.
products listed this document designed used with ordinary electronic equipment devices (such audio visual equipment, office-automation equipment, communications devices, electrical appliances electronic toys). Should intend these products with equipment devices which require extremely high level reliability malfunction with would directly endanger human life (such medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers other safety devices), please sure consult with sales representative advance. About Export Control Order Japan Products described herein objects controlled goods Annex (Item Export Trade Control Order Japan. case export from Japan, please confirm applies "objective" criteria "informed" MITI clause) basis "catch controls Non-Proliferation Weapons Mass Destruction.
Appendix1-Rev1.1

Drive RSS130N03 Structure Silicon N-channel External dimensi

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