Drive RSS090P03 Structure Silicon P-channel External dimensi

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Drive RSS090P03 Structure Silicon P-channel External dimensi

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RSS090P03
Drive
RSS090P03
Structure Silicon P-channel External dimensions (Unit
SOP8
1.75
Features On-resistance. Built-in Protection Diode. Small Surface Mount Package (SOP8).
1pin mark
1.27
Application Power switching, converter.
Each lead same dimensions
Packaging specifications
Package Type RSS090P03 Code Basic ordering unit (pieces) Taping 2500
Equivalent circuit
Source Source Source Gate Drain )Drain Drain Drain
PROTECTION DIODE BODY DIODE
Absolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current
Source current (Body diode)
Continuous Pulsed Continuous Pulsed
Total power dissipation Channel temperature Range Storage temperature
Pw10µs, Duty cycle1% Mounted ceramic board
Symbol VDSS VGSS Tstg
Limits ±9.0 -1.6 +150
Unit
Thermal resistance
Parameter Channel ambient
Mounted ceramic board.
Symbol (ch-a)
Limits 62.5
Unit
Rev.B
0.4Min.
RSS090P03
Electrical characteristics (Ta=25°C)
Parameter Symbol Min. IGSS Gate-source leakage Drain-source breakdown voltage V(BR) IDSS Zero gate voltage drain current (th) -1.0 Gate threshold voltage Static drain-source on-state (on) resistance Forward transfer admittance Ciss Input capacitance Coss Output capacitance Reverse transfer capacitance Crss (on) Turn-on delay time Rise time (off) Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Typ. 4000
Max. -2.5
Unit
Conditions VGS= -20V, VDS=0V -1mA, VGS=0V VDS= -30V, VGS=0V VDS= -10V, -1mA -9.0A, VGS= -10V -4.5A, VGS= -4.5V -4.5A, VGS= -4.0V VDS= -10V, -4.5A VDS= -10V VGS=0V f=1MHz -4.5A -15V VGS= -10V RL=3.3 -15V VGS= -9.0A
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
Min.
Typ.
Max.
-1.2
Unit
Conditions -1.6A, VGS=0V
Rev.B
RSS090P03
Electrical characteristic curves
VDS= -10V Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
Ta=25°C Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
VGS= -10V Pulsed
DRAIN CURRENT
VGS= VGS= -4.5V VGS= -10V
0.01
0.001
GATE-SOURCE VOLTAGE -VGS
DRAIN CURRENT
DRAIN CURRENT
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance Drain Current
Fig.3 Static Drain-Source On-State Resistance Drain Current
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
Ta=125°C Ta=75°C Ta=25°C -25°C
REVERSE DRAIN CURRENT -IDR
VGS= -4.5V Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
VGS= Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
VGS=0V Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
0.01
DRAIN CURRENT
DRAIN CURRENT
SOURCE-DRAIN VOLTAGE -VSD
Fig.4 Static Drain-Source On-State Drain Current
Fig.5 Static Drain-Source On-State Drain Current
Fig.6 Reverse Drain Current Source-Drain Current
10000
10000
GATE-SOURCE VOLTAGE -VGS
CAPACITANCE (pF)
Ciss
SWITCHING TIME (ns)
1000
(off)
Ta=25°C VDD= -15V VGS= -10V RG=10 Pulsed
Ta=25°C VDD= -15V RG=10 Pulsed
1000
Coss Crss
Ta=25°C f=1MHz VGS=0V 0.01
(on)
0.01
DRAIN-SOURCE VOLTAGE -VDS
DRAIN CURRENT
TOTAL GATE CHARGE (nC)
Fig.7 Typical Capacitance Drain-Source Voltage
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
Rev.B
RSS090P03
Measurement circuits
D.U.T.
td(off) toff
td(on)
Fig.10 Switching Time Test Circuit
Fig.11 Switching Time Waveforms
(Const.) D.U.T.
Charge
Fig.12 Gate Charge Test Circuit
Fig.13 Gate Charge Waveform
Rev.B
Appendix
Notes
technical content pages this document reproduced form transmitted means without prior permission ROHM CO.,LTD. contents described herein subject change without notice. specifications product described this document reference only. Upon actual use, therefore, please request that specifications separately delivered. Application circuit diagrams circuit constants contained herein shown examples standard operation. Please careful attention peripheral conditions when designing circuits deciding upon circuit constants set. data, including, limited application circuit diagrams information, described herein intended only illustrations such devices specifications such devices. ROHM CO.,LTD. disclaims warranty that such devices shall free from infringement third party's intellectual property rights other proprietary rights, further, assumes liability whatsoever nature event such infringement, arising from connected with related such devices. Upon sale such devices, other than buyer's right such devices itself, resell otherwise dispose same, express implied right license practice commercially exploit intellectual property rights other proprietary rights owned controlled ROHM CO., LTD. granted such buyer. Products listed this document antiradiation design.
products listed this document designed used with ordinary electronic equipment devices (such audio visual equipment, office-automation equipment, communications devices, electrical appliances electronic toys). Should intend these products with equipment devices which require extremely high level reliability malfunction with would directly endanger human life (such medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers other safety devices), please sure consult with sales representative advance. About Export Control Order Japan Products described herein objects controlled goods Annex (Item Export Trade Control Order Japan. case export from Japan, please confirm applies "objective" criteria "informed" MITI clause) basis "catch controls Non-Proliferation Weapons Mass Destruction.
Appendix1-Rev1.1

Drive RSS090P03 Structure Silicon P-channel External dimensi

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