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Drive RSS075P03 Structure Silicon P-channel External dimensi
Top Searches for this datasheetRSS075P03 Drive RSS075P03 Structure Silicon P-channel External dimensions (Unit SOP8 1.75 Features On-resistance. Built-in Protection Diode. Small Surface Mount Package (SOP8). 1pin mark 1.27 Application Power switching, converter. Each lead same dimensions Packaging specifications Package Type RSS075P03 Code Basic ordering unit (pieces) Taping 2500 Equivalent circuit Source Source Source Gate Drain )Drain Drain Drain PROTECTION DIODE BODY DIODE Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS Tstg Limits ±7.5 -1.6 +150 Unit Total power dissipation Channel temperature Range Storage temperature Pw10µs, Duty cycle1% Mounted ceramic board Thermal resistance Parameter Channel ambient Mounted ceramic board. Symbol (ch-a) Limits 62.5 Unit Rev.C 0.4Min. RSS075P03 Electrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS Gate-source leakage Drain-source breakdown voltage V(BR) Zero gate voltage drain current IDSS Gate threshold voltage (th) -1.0 Static drain-source on-state (on) resistance Forward transfer admittance Ciss Input capacitance Output capacitance Coss Reverse transfer capacitance Crss (on) Turn-on delay time Rise time (off) Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Pulsed Typ. 2900 Max. -2.5 Unit Conditions VGS= ±20V, VDS=0V -1mA, VGS=0V VDS= -30V, VGS=0V VDS= -10V, -1mA -7.5A, VGS= -10V -4.0A, VGS= -4.5V -4.0A, VGS= -4.0V VDS= -10V, -4.0A VDS= -10V VGS=0V f=1MHz -4.0A -15V VGS= -10V RL=3.75 RG=10 -15V VGS= -7.5A Body diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol Min. Typ. Max. -1.2 Unit Conditions -1.6A, VGS=0V Rev.C RSS075P03 Electrical characteristic curves VDS= -10V Pulsed Ta=125°C Ta=75°C Ta=25°C -25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on) STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on) Ta=25°C Pulsed Ta=125°C Ta=75°C Ta=25°C -25°C VGS= -10V Pulsed DRAIN CURRENT VGS= VGS= -4.5V VGS= -10V 0.01 0.001 GATE-SOURCE VOLTAGE -VGS DRAIN CURRENT DRAIN CURRENT Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Resistance Drain Current Fig.3 Static Drain-Source On-State Resistance Drain Current STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on) STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on) REVERSE DRAIN CURRENT -IDR VGS= -4.5V Pulsed VGS= Pulsed Ta=125°C Ta=75°C Ta=25°C -25°C VGS=0V Pulsed Ta=125°C Ta=75°C Ta=25°C -25°C Ta=125°C Ta=75°C Ta=25°C -25°C 0.01 DRAIN CURRENT DRAIN CURRENT SOURCE-DRAIN VOLTAGE -VSD Fig.4 Static Drain-Source On-State Drain Current Fig.5 Static Drain-Source On-State Drain Current Fig.6 Reverse Drain Current Source-Drain Current 10000 GATE-SOURCE VOLTAGE -VGS SWITCHING TIME (ns) Ta=25°C f=1MHz VGS=0V 10000 CAPACITANCE (pF) 1000 Ciss Ta=25°C VDD= -15V VGS= -10V RG=10 Pulsed Ta=25°C VDD= -15V -7.5A RG=10 Pulsed 1000 (off) Coss Crss (on) 0.01 0.01 DRAIN-SOURCE VOLTAGE -VDS DRAIN CURRENT TOTAL GATE CHARGE (nC) Fig.7 Typical Capacitance Drain-Source Voltage Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics Rev.C RSS075P03 Measurement circuits D.U.T. td(off) toff td(on) Fig.10 Switching Time Test Circuit Fig.11 Switching Time Waveforms (Const.) D.U.T. Charge Fig.12 Gate Charge Test Circuit Fig.13 Gate Charge Waveform Rev.C Appendix Notes technical content pages this document reproduced form transmitted means without prior permission ROHM CO.,LTD. contents described herein subject change without notice. specifications product described this document reference only. Upon actual use, therefore, please request that specifications separately delivered. Application circuit diagrams circuit constants contained herein shown examples standard operation. Please careful attention peripheral conditions when designing circuits deciding upon circuit constants set. data, including, limited application circuit diagrams information, described herein intended only illustrations such devices specifications such devices. 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