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Darlington Complementary Silicon Power Transistors
designed general-purpose amplifier low-speed switching motor control applications. Similar Popular 2N6282, 2N6283, 2N6284 2N6285, 2N6286, 2N6287 Rugged RBSOA Characteristics Monolithic Construction with Built-in Collector-Emitter Diode
MJH6282 MJH6283* MJH6284* MJH6285 MJH6286* MJH6287
*Motorola Preferred Device
POWER DISSIPATION (WATTS)
MAXIMUM RATINGS
Rating Symbol VCEO MJH6282 MJH6285 MJH6283 MJH6286 MJH6284 MJH6287 Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Peak Base Current Total Device Dissipation 25_C Derate above 25_C Watts W/_C 1.28 Operating Storage Junction Temperature Range Tstg
DARLINGTON AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS WATTS
THERMAL CHARACTERISTICS
Characteristic
Symbol
Unit
Thermal Resistance, Junction Case
0.78
_C/W
CASE 340D-02
CASE TEMPERATURE (°C)
Figure Power Derating
Preferred devices Motorola recommended choices future best overall value.
Motorola, Inc. 1996 Motorola Bipolar Power Transistor Device Data
MJH6282 MJH6283 MJH6284 MJH6285 MJH6286 MJH6287
ELECTRICAL CHARACTERISTICS 25_C unless otherwise noted)
Characteristic CHARACTERISTICS Symbol Unit Collector-Emitter Sustaining Voltage Adc, VCEO(sus) MJH6282, MJH6285 MJH6283, MJH6286 MJH6284, MJH6287 Collector Cutoff Current (VCE Vdc, (VCE Vdc, (VCE Vdc, ICEO mAdc MJH6282, MJH6285 MJH6283, MJH6286 MJH6284, MJH6287 Collector Cutoff Current (VCE Rated VCB, VBE(off) Vdc) (VCE Rated VCB, VBE(off) Vdc, 150_C) Emitter Cutoff Current (VBE Vdc, ICEX mAdc IEBO mAdc CHARACTERISTICS Current Gain Adc, Vdc) Current Gain Adc, Vdc) 18,000 Collector-Emitter Saturation Voltage Adc, mAdc) Collector-Emitter Saturation Voltage Adc, mAdc) Base-Emitter Voltage Adc, Vdc) VCE(sat) VBE(on) Base-Emitter Saturation Voltage Adc, mAdc) VBE(sat) DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product Adc, Vdc, MHz) Output Capacitance (VCB Vdc, MHz) MJH6282, MJH6285, Small-Signal Current Gain Adc, Vdc, kHz) SWITCHING CHARACTERISTICS Typical Resistive Load Symbol Unit Delay Time Rise Time Storage Time Fall Time Vdc, Duty Cycle 1.0% Pulse test: Pulse Width Duty Cycle 2.0%. VARIED OBTAIN DESIRED CURRENT LEVELS MUST FAST RECOVERY TYPES, e.g.: 1N5825 USED ABOVE MSD6100 USED BELOW
SCOPE APPROX APPROX DUTY CYCLE 1.0%
MJH6282 MJH6283 MJH6284
COLLECTOR
MJH6285 MJH6286 MJH6287
COLLECTOR
BASE
disconnected
BASE
EMITTER
EMITTER
test circuit reverse diode voltage polarities.
Figure Switching Times Test Circuit
Figure Darlington Schematic
Motorola Bipolar Power Transistor Device Data
MJH6282 MJH6283 MJH6284 MJH6285 MJH6286 MJH6287
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.07 0.05 0.03 0.02 0.01 0.01 0.05 0.02 0.01 SINGLE PULSE RJC(t) r(t) 0.78°C/W CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME TJ(pk) P(pk) RJC(t) TIME (ms) P(pk)
DUTY CYCLE, t1/t2 1000
0.02 0.03
0.05
Figure Thermal Response
FBSOA, FORWARD BIAS SAFE OPERATING AREA
COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) 0.05 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 150°C
SECOND BREAKDOWN LIMIT BONDING WIRE LIMITED THERMAL LIMITATION 25°C SINGLE PULSE
0.05 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) COLLECTOR CURRENT (AMPS) 150°C
SECOND BREAKDOWN LIMIT BONDING WIRE LIMITED THERMAL LIMITATION 25°C SINGLE PULSE
0.05 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 150°C
SECOND BREAKDOWN LIMIT BONDING WIRE LIMITED THERMAL LIMITATION 25°C SINGLE PULSE
Figure MJH6282, MJH6285
Figure MJH6283, MJH6286
Figure MJH6284, MJH6287
COLLECTOR CURRENT (AMPS)
IC/IB 25°C VBE(off) DUTY CYCLE
FORWARD BIAS There limitations power handling ability transistor: average junction temperature second breakdown. Safe operating area curves indicate limits transistor that must observed reliable operation; i.e., transistor must subjected greater dissipation than curves indicate. data Figure based J(pk) 150_C; variable depending conditions. Second breakdown pulse limits valid duty cycles provided J(pk) J(pk) calculated from data Figure high case temperatures, thermal limitations will reduce power that handled values less than limitations imposed second breakdown.
MJH6282, 6285 MJH6283, 6286 MJH6284, 6287
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure Maximum RBSOA, Reverse Bias Safe Operating Area
Motorola Bipolar Power Transistor Device Data
MJH6282 MJH6283 MJH6284 MJH6285 MJH6286 MJH6287
3000 2000 hFE, CURRENT GAIN hFE, CURRENT GAIN 150°C 1000 25°C 55°C 3000 2000 5000 150°C 25°C
1000 55°C
COLLECTOR CURRENT (AMPS)
COLLECTOR CURRENT (AMPS)
Figure Current Gain
COLLECTOR-EMITTER VOLTAGE (VOLTS)
COLLECTOR-EMITTER VOLTAGE (VOLTS)
1000 25°C
1000
BASE CURRENT (mA)
BASE CURRENT (mA)
Figure Collector Saturation Region
25°C VOLTAGE (VOLTS)
25°C
VOLTAGE (VOLTS)
VBE(sat) IC/IB VCE(sat) IC/IB
VBE(sat) IC/IB VBE(on)
VCE(sat) IC/IB
COLLECTOR CURRENT (AMPS)
COLLECTOR CURRENT (AMPS)
Figure "On" Voltages
Motorola Bipolar Power Transistor Device Data
MJH6282 MJH6283 MJH6284 MJH6285 MJH6286 MJH6287
PACKAGE DIMENSIONS
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 16.20 4.00 4.10 17.80 18.20 4.00 1.75 INCHES 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 0.638 0.158 0.161 0.701 0.717 0.157 0.069
STYLE
BASE COLLECTOR EMITTER COLLECTOR
CASE 340D-02 ISSUE
Motorola Bipolar Power Transistor Device Data
MJH6282 MJH6283 MJH6284 MJH6285 MJH6286 MJH6287
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Ping Industrial Park, Ting Road, N.T., Hong Kong. 852-26629298
Motorola Bipolar Power Transistor Device Data MJH6282/D
*MJH6282/D*

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