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RECTIFIER DIODES (heatsink-mount type) Absolute Maximum Ratings (


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RECTIFIER Absolute Maximum Ratings Type IFSM SFPM-52 SFPM-54 SFPM-62 SFPM-64 AM01Z AM01 AM01A EM01Z EM01 EM01A 1000 1000 1000 1000 0.95 0.91 0.91 0.92 SG-5FS SG-5FR SG-5(+) SG-5(-) SG-6+ SG-6(-) SG-5L(+) SG-5L(-) SG-6LS SG-6LR SG-5T(+) SG-5T(-) Type 0.95 0.92 0.97 0.97 0.98 0.98 Elec. Char. 25°C Max. IF(µA) Max. *With 1000 0.92 3.2* 0.92 3.0* 0.97 0.95 Type Abs. Max. Ratings IFSM Elec. Char. 25°C Max. IF(µA) Max.
RECTIFIER DIODES (heatsink-mount type)
Absolute Maximum Ratings (TC=120°C) IFSM Elec. Char. 25°C Max. (µA) Max.
RECTIFIER DIODES (center-tap type)
Absolute Maximum Ratings Type with IFSM Elec. Char. 25°C Max. (µA) Max. Type
MICROWAVE OVEN Absolute Maximum Ratings (kV) HVR-1X-40B UX-F0B (mA) IFSM Elec. Char. 25°C Max. (mA) (µA) Max.
FMM-22S,R FMM-24S,R FMM-26S,R FMM-31S,R FMM-32S,R FMM-34S,R FMM-36S,R
RECTIFIER DIODES (bridge type)
Absolute Maximum Ratings Type with IFSM Elec. Char 25°C Max. (µA) Max.
HIGH-VOLTAGE RECTIFIER Absolute Maximum Ratings Type (kV) (mA) IFSM (°C) Elec. Char. 25°C Max. (mA) (µA) Max. (µs) Max.
RB-150 RB-151 RB-152 RB-154 RB-156 RB-158 LB-156 RBA-401 RBA-402 RBV-404 RBV-406 RBV-408 RBV-406M RBV-406H RBV-601 RBV-602 RBV-604 RBV-606 RBV-608 RBV-606H RBV-1506S RBV-1506 RBV-2506
fin)
0.95
0.91 1.05
1.10 0.92 1.05 0.95 1.05 1.05
12.5
SHV-02 SHV-03S SHV-03 SHV-06 SHV-08 SHV-10 SHV-12 SHV-14 SHV-16 SHV-20 SHV-24 SHV-06NK SHV-08NK SHV-10K SHV-12K SHV-06UNK SHV-08UNK SHV-10UK SHV-12UK SHV-16UK SHV-08XN
0.18
0.18
0.15
MicroSystems, Inc.
Northeast Cutoff, 15036 Northeast Cutoff, 01615-0036 (508) 853-5000 Worcester, Massachusetts 15036 Worcester, 1997 Allegro MicroSystems, Inc. Copyright ©Massachusetts 01615-0036 (508) 853-5000
FAST-RECOVERY RECTIFIER Abs. Max. Ratings Type AS01Z AS01 AS01A ES01Z ES01 ES01A ES01F AU01Z AU01 AU01A AU02Z AU02 AU02A EU01Z EU01 EU01A *With 2000 1000 1500 1500 1000 1000 IFSM Max. 1.35 Elec. Char. 25°C (µA) Max. (µs) Max. Type Abs. Max. Ratings 1000 1000 1300 1300 1500 1500 1500 1500 1500 1500 1300 1300 1300 1500 1500 1500 IFSM Elec. Char. 25°C Max. (µA) Max. (µs) Max.
0.25 0.25
0.25 0.25
0.25
0.25
EU02Z EU02 EU02A RG2A2 FMU-G2YXS FMU-G16S FMU-G26S CTU-G2D2 CTU-G3DR FMP-G3FS FMP-G5FS FMS-3FU
3.5* 3.5* 3.0*
0.95
0.95 0.97 0.95
2.5* 3.5* 4.0* 1.5* 2.5* 2.5* 2.5* 5.0*
0.85 1.25 1.35
FAST-RECOVERY RECTIFIER DIODES (center-tap type)
Abs. Max. Ratings Type with FMU-12S,R FMU-14S,R FMU-16S,R FMU-21S,R FMU-22S,R FMU-24S,R FMU-26S,R FMU-32S,R FMU-34S,R FMU-36S,R IFSM Max. IF(µA) UB-151 UB-152 UB-154 Elec. Char. 25°C (µs) Type
FAST-RECOVERY RECTIFIER DIODES (bridge type)
Abs. Max. Ratings IFSM Max. Elec. Char. 25°C (µA) (µs)
MicroSystems, Inc.
Northeast Cutoff, 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000
ULTRA-FAST-RECOVERY RECTIFIER Abs. Max. Ratings Type IFSM SFPL-52 SFPL-62 AL01Z AG01Y AG01Z AG01 AG01A EG01Y EG01Z EG01 EG01A EG01C 1000 1000 *With 0.05 0.02 0.05 0.05 3.5* 3.5* 0.98 0.98 0.98 0.98 0.95 0.95 0.15 0.98 Elec. Char. 25°C AP01C EP10C FMG-G26S FMG-G36S FMG-G2CS FMG-G3CS FMP-G12S FML-G12S FML-G13S FML-G14S FML-G16S FML-G22S FMX-G12S 10000 1000 1000 2000 1000 1000 1000 0.98 0.98 2.0* 3.0* 1.15 0.98 3.5* Type Abs. Max. Rating IFSM 0.25 Max. IF(µA) Elec. Char. 25°C (ns) Max. IF(mA) (ns)
ULTRA-FAST-RECOVERY RECTIFIER DIODES (center-tap type)
Abs. Max. Ratings Type with FMG-12S, FMG-13S, FMG-14S, FMG-22S, FMG-23S, FMG-24S, FMG-26S, FMG-32S, FMG-33S, FMG-34S, FMG-36S, FML-12S FML-3S FML-14S FML-22S FML-23S FML-24S FML-32S FML-33S FML-34S FML-36S FMX-12S FMX-22S FMX-22SL FMX-32S 0.98 0.15 0.98 0.98 0.98 0.25 0.15 IFSM Elec. Char. 25°C Max. IF(mA) RBA-402L RBV-602L (ns) Type
ULTRA-FAST-RECOVERY RECTIFIER DIODES (bridge type)
Abs. Max. Ratings with IFSM 0.98 Elec. Char. 25°C Max. IF(mA) 50µA 0.25 (ns)
MicroSystems, Inc.
Northeast Cutoff, 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000
GaAs GaAs POWER SCHOTTKY Providing ultimate high-voltage, high-frequency rectification effeciency, gallium-arsenide Schottky diodes major improvement rectifier technology. Gallium-arsenide Schottky diodes essentially free storage time caused minority carreiers, even under maximum surge-current conditions. Unlike silicon Schottky diodes that diffused guard ring with attendant junction, GaAs Schottky diodes employ field plate. This allows safe operation high forward voltage without turning parasitic junction. GaAs Schottky diodes exhibit good freedom from bipolar injection. Bipolar injection phenomenon that occurs forward-biased silicon Schottky diodes that have maximum voltage ratings greater than causing injection minority carriers inversion layer acting junction. minimal turn-off current that does appear these diodes primarily capacitance will reflect power quasi-resonant resonant SMPS topologies.
Data Sheet 31649.10
ANODE
CATHODE
ANODE
Dwg. PD-003
FEATURES
Very-Fast Recovery Times High Efficacy Soft Turn Reverse Leakage High-Temperature Operation
ABSOLUTE MAXIMUM RATINGS
(See Table, next page)
Continuous Output Current,IO GSC215, GSC218 GSC235 GSC315, GSC318 Reverse Voltage, GSC215, GSC315 GSC218, GSC318 GSC235 Temperature, Table Junction Temperature, Storage Temperature Range, -40°C +150°C
Always order complete part number, e.g., GSC215
GaAs ABSOLUTE MAXIMUM RATINGS +25°C, each diode.
Type Number GSC215 GSC218 GSC235 GSC315 GSC318 Reverse Voltage Square Wave Current Temp. (°C) Half-Cycle Sine Wave, Peak IFSM HzHalf-Cycle Sine Wave, Pulse
ELECTRICAL CHARACTERISTICS +25°C (unless otherwise noted), each diode.
Reverse Current R=VRM (mA), 25°C 150°C Recovery Time di/dt=100 A/µs (ns) Capacitance 1MHZ (pF) Thermal Resistance (°C/W)
Type Number GSC215 GSC218 GSC235 GSC315 GSC318
Forward Voltage
MicroSystems, Inc.
Northeast Cutoff, 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000
SCHOTTKY SCHOTTKY BARRIER Abs. Max. Ratings Type with SFPB-52 SFPB-62 SFPB-72 RK42 FMB-G12L FMB-G22H AK03 EK03 EK13 RK13 RK33 RK43 SFPB-54 SFPB-64 SFPB-74 AK04 EK04 EK14 RK14 RK34 RK44 FMB-G14L FMB-G24H SFPB-56 SFPB-76 AK06 EK06 EK16 RK16 RK36 RK46 SFPB-59 AK09 EK09 EK19 RK19 RK39 RK49 0.62 0.62 0.62 0.62 0.62 0.62 0.62 0.81 0.81 0.81 0.81 0.81 0.81 0.81 0.55 0.55 0.55 0.55 0.55 0.55 0.55 0.55 0.47 0.55 0.55 0.55 0.55 0.55 0.55 0.47 0.47 IFSM Elec. Char TA=25°C Max. IF(mA) RBA-406B Type Abs. Max. Ratings with IFSM 0.62 Elec. Char. TA=25°C) Max. IF(mA) (ns) Max. (ns) Max. 0.25 FMB-22L FMB-22H FMB-32 FMB-32M FMB-24 FMB-24M FMB-24H FMB-24L FMB-34S FMB-34 FMB-34M CTB-24 CTB-24L CTB-34 CTB-34M FMB-26 FMB-26L FMB-36 FMB-36M FMB-29 FMB-29L FMB-39 FMB-39M Type Abs. Max. Ratings with 0.81 0.81 0.62 0.62 0.55 0.55 0.58 0.55 0.55 0.47 0.55 0.47 IFSM Elec. Char. TA=25°C Max. IF(mA) (ns) Max.
SCHOTTKY BARRIER DIODES (center-tap type)
SCHOTTKY BARRIER DIODES (bridge type)
ZENER AVALANCHE ZENER Abs. Max. Ratings Type IZSM Instantaneous Current Elec. Char. TA=25°C Instantaneous Current 61.5 RZ1030 RZ1055 RZ1065 RZ1100 RZ1125 RZ1150 Abs. Max. Ratings Type IZSM Instantaneous Current 1500 27±5 Elec. Char. TA=25°C Instantaneous Current (mA) Max. (mA) Max. IR(H) RZ1175 RZ1200 RZ1225 (µA) Max. (µA) Max. Type IR(H)
AVALANCHE ZENER DIODES (with built-in thyristor)
Abs. Max. Ratings ITSM 50Hz Half-cycle Sinewave Single Shot Elec. Char. A=25°C Instantaneous Current (µA) Max. (µA) Max.
POWER ZENER
Allegro MicroSystems, Inc. reserves right make, from time time, such departures from detail specifications required permit improvements design products. Components made under military approvals will accordance with approval requirements. information included herein believed accurate reliable. However, Allegro MicroSystems, Inc. assumes responsibility use; infringements patents other rights third parties which result from use.
MicroSystems, Inc.
Northeast Cutoff, 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000

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