N-Channel Power MOSFET Avalanche Rugged Technology Rugged Gate Ox
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LTP70N06
N-Channel Power MOSFET
Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge
Application
Switching DC-DC converter motor control
BVDSS RDS(ON
Absolute Maximum Ratings (TA=25 Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Source-drain Current Total Dissipation TC=25
Symbol
VDSS VGSS Ptot Tstg
Limit
Steady State
Unit
Operating Junction Storage Temperature Range Avalanche Energy with Single Pulse Thermal Resistance-Junction Ambient* Thermal Thermal Resistance-Junction Case
Pulse width limited safe operating area Starting Tj=25, ID=30A, VDD=37.5V
LTP70N06
N-Channel Power MOSFET
Electrical Characteristics Unless Otherwise Specified)
Parameter Symbol
STATIC BVDSS VGS(th) IGSS IDSS RDS(ON) Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Transconductance VGS=0V, ID=250µA VDS=VGS, ID=250µA VDS=0V, VGS=±20V VDS=Max Rating, VGS=0V VGS=10V, ID=35A VDSID ID=35A ±100
Limit
Unit
DYNAMIC Ciss Coss Crss
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Turn-Off Delay Time Fall Time =10V, ID=70A VDS=30V, RG=10 RL=0.5 VDS=25V, VGS=0V, f=1MHz VDD=48V, VGS=10V, ID=70A
4620
4800
td(on) td(off)
Source-Drain Diode Ratings Characteristics
Symbol
Characteristic Continuous Source current Pulsed Source Current Diode Forward voltage-
Min.
Typ.
Max.
Units
Test Condition Integral reverse diode MOSFET
IS=70A
Note: Pulse test: pulse width 300us, duty cycle<=
LTP70N06
N-Channel Power MOSFET
Typical Characteristics Noted)
LTP70N06
N-Channel Power MOSFET
Typical Characteristics Noted)
LTP70N06
N-Channel Power MOSFET
Test Circuit Waveform
LTP70N06
N-Channel Power MOSFET
Package Dimensions
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