Description: Package: Out: Complementary MOSFET Half-Bridge P-Channel)
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Si3850ADV Si3850DV
Description: Package: Out: Complementary MOSFET Half-Bridge P-Channel) TSOP-6 Identical
Part Number Replacements Si3850ADV-T1-E3 Replaces Si3850DV-T1-E3 Si3850ADV-T1-E3 Replaces Si3850DV-T1
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation Tstg RthJA Symbol N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Si3850ADV 0.96 0.77 1.08 Si3580DV 0.85 0.95 0.65 1.25 °C/W Unit
Operating Junction Storage Temperature Range Maximum Junction-to-Ambient
Document Number: 73853 Revision: 31-Oct-06
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SPECIFICATIONS unless otherwise noted
Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current VGS(th) IGSS IDSS ID(on) N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Ch 0.38 0.55 0.500 0.750 Symbol Si3850ADV Si3850DV Unit
0.240 0.510 0.325 0.780 0.87 0.95 1.10 0.22 0.28 0.24 0.26 10.5 0.300 0.640 0.410 0.980
Drain-Source On-Resistance
rDS(on)
Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Switchinga
1.10 0.25
td(on) Turn-On Time td(off) Turn-Off Time Source-Drain Reverse Recovery Time
Specification comparisons supplied courtesy compare devices constitute commercial product datasheet guarantee identical performance. Designers should refer appropriate datasheets same number guaranteed specification limits.
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Document Number: 73853 Revision: 31-Oct-06
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