M3D088 PMBF107 N-channel enhancement mode vertical D-MOS transist

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M3D088 PMBF107 N-channel enhancement mode vertical D-MOS transist

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book, halfpage
M3D088
PMBF107 N-channel enhancement mode vertical D-MOS transistor
Product specification Supersedes data April 1995 File under Discrete Semiconductors, SC13b 1998
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
FEATURES Direct interface C-MOS, TTL, etc. High-speed switching secondary breakdown. APPLICATIONS Relay, high-speed line transformer drivers. DESCRIPTION
PMBF107
PINNING SOT23 SYMBOL gate source drain DESCRIPTION
handbook, columns
N-channel enhancement mode vertical D-MOS transistor SOT23 package, intended line current interruptor telephone sets. CAUTION This product supplied anti-static packing prevent damage caused electrostatic discharge during transport handling. further information, refer Philips specs.: SNW-EQ-608, SNW-FQ-302A SNW-FQ-302B. QUICK REFERENCE DATA SYMBOL RDSon VGSth PARAMETER drain-source voltage drain current (DC) drain-source on-resistance gate-source threshold voltage CONDITIONS
view
MSB003
MBB076
Fig.1 Simplified outline symbol.
MAX.
UNIT
1998
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL VGSO Ptot Tstg Note Device mounted printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Note Device mounted printed-circuit board. CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)DSS IDSS IDSX IGSS VGSth RDSon Ciss Coss Crss toff PARAMETER drain-source breakdown voltage drain-source leakage current drain cut-off current gate-source leakage current gate-source threshold voltage drain-source on-state resistance transfer admittance input capacitance output capacitance feedback capacitance CONDITIONS VDS; MIN. TYP. PARAMETER thermal resistance from junction ambient; note VALUE PARAMETER drain-source voltage gate-source voltage drain current (DC) drain current total power dissipation storage temperature junction temperature peak value Tamb note open drain CONDITIONS MIN.
PMBF107
MAX. +150
UNIT
UNIT
MAX.
UNIT
Switching times (see Figs turn-on time turn-off time
1998
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
PMBF107
handbook, halfpage
handbook, halfpage
INPUT
MBB691
OUTPUT toff
MBB692
Fig.2 Switching time test circuit.
Fig.3 Input output waveforms.
handbook, halfpage
MDA782
handbook, halfpage
MDA783
Ptot (mW)
(mA)
Tamb (°C)
Fig.4 Power derating curve.
Fig.5 Typical output characteristics;
1998
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
PMBF107
handbook, halfpage
MDA784
MDA702
handbook, halfpage
RDSon
(mA)
(mA)
Fig.6 Typical transfer characteristic;
Fig.7
Typical on-resistance function drain current;
handbook, halfpage
MDA703
(pF)
Ciss
Coss Crss
Fig.8
Typical capacitances function drain-source voltage; MHz;
1998
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
PACKAGE OUTLINE Plastic surface mounted package; leads
PMBF107
SOT23
detail
scale
DIMENSIONS original dimensions) UNIT max. 0.48 0.38 0.15 0.09 0.95 0.45 0.15 0.55 0.45
OUTLINE VERSION SOT23
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1998
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS
PMBF107
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1998
Philips Semiconductors worldwide company
Argentina: South America Australia: Waterloo Road, NORTH RYDE, 2113, Tel. 9805 4455, Fax. 9805 4466 Austria: Computerstr. A-1101 WIEN, P.O. 213, Tel. 101, Fax. 1210 Belarus: Hotel Minsk Business Center, Bld. 1211, Volodarski Str. 220050 MINSK, Tel. +375 733, Fax. +375 Belgium: Netherlands Brazil: South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, James Bourchier Blvd., 1407 SOFIA, Tel. +359 211, Fax. +359 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. 7381 China/Hong Kong: Hong Kong Industrial Technology Centre, Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: South America Czech Republic: Austria Denmark: Prags Boulevard 1919, DK-2300 COPENHAGEN Tel. 2636, Fax. 0044 Finland: Sinikalliontie FIN-02630 ESPOO, Tel. +358 615800, Fax. +358 61580920 France: Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. 6161, Fax. 6427 Germany: D-20097 HAMBURG, Tel. Fax. Greece: 25th March Street, 17778 TAVROS/ATHENS, Tel. 4894 339/239, Fax. 4814 Hungary: Austria India: Philips INDIA Ltd, Shivsagar Estate, Block, Annie Besant Worli, MUMBAI 018, Tel. 4938 541, Fax. 4938 Indonesia: Singapore Ireland: Newstead, Clonskeagh, DUBLIN Tel. +353 7640 000, Fax. +353 7640 Israel: RAPAC Electronics, Kehilat Saloniki 18053, AVIV 61180, Tel. +972 0444, Fax. +972 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza Novembre 20124 MILANO, Tel. 6752 2531, Fax. 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. 3740 5130, Fax. 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. 1412, Fax. 1415 Malaysia: Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. 5214, Fax. 4880 Mexico: 5900 Gateway East, Suite 200, PASO, TEXAS 79905, Tel. +9-5 7381 Middle East: Italy Netherlands: Postbus 90050, 5600 EINDHOVEN, Bldg. Tel. 82785, Fax. 88399 Zealand: Wagener Place, C.P.O. 1041, AUCKLAND, Tel. 4160, Fax. 7811 Norway: Manglerud 0612, OSLO, Tel. 8000, Fax. 8341 Philippines: Philips Semiconductors Philippines Inc., Valero Salcedo Village, P.O. 2108 MCC, MAKATI, Metro MANILA, Tel. 6380, Fax. 3474 Poland: Lukiska 04-123 WARSZAWA, Tel. 2831, Fax. 2327 Portugal: Spain Romania: Italy Russia: Philips Russia, Usatcheva 35A, 119048 MOSCOW, Tel. 6918, Fax. 6919 Singapore: Lorong Payoh, SINGAPORE 1231, Tel. 2538, Fax. 6500 Slovakia: Austria Slovenia: Italy South Africa: S.A. PHILIPS Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 7430 Johannesburg 2000, Tel. 5911, Fax. 5494 South America: Rocio 220, floor, Suite 04552-903 Paulo, PAULO Brazil, Tel. 2333, Fax. 1849 Spain: Balmes 08007 BARCELONA, Tel. 6312, Fax. 4107 Sweden: Kottbygatan Akalla, S-16485 STOCKHOLM, Tel. 2000, Fax. 2745 Switzerland: Allmendstrasse 140, CH-8027 Tel. 2686, Fax. 7730 Taiwan: Philips Semiconductors, Chien Rd., Sec. TAIPEI, Taiwan Tel. +886 2134 2865, Fax. +886 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. 4090, Fax. 0793 Turkey: Talatpasa Cad. 80640 Tel. 2770, Fax. 6707 Ukraine: PHILIPS UKRAINE, Patrice Lumumba str., Building Floor 252042 KIEV, Tel. +380 2776, Fax. +380 0461 United Kingdom: Philips Semiconductors Ltd., Bath Road, Hayes, MIDDLESEX 5BX, Tel. 5000, Fax. 8421 United States: East Arques Avenue, SUNNYVALE, 94088-3409, Tel. 7381 Uruguay: South America Vietnam: Singapore Yugoslavia: PHILIPS, Pasica 5/v, 11000 BEOGRAD, Tel. +381 344, Fax.+381
other countries apply Philips Semiconductors, Marketing Sales Communications, Building BE-p, P.O. 218, 5600 EINDHOVEN, Netherlands, Fax. 24825 Philips Electronics N.V. 1997
Internet:
SCA54
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
135108/00/03/pp8
Date release: 1998
Document order number:
9397 03369

M3D088 PMBF107 N-channel enhancement mode vertical D-MOS transist

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