Discrete Semiconductors Series: 2N681-2N692 Phase Control Amperes 25-8
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Discrete Semiconductors Series: 2N681-2N692 Phase Control Amperes 25-800 Volts
Features
Gate Current On-State Voltage Hermetic Packaging Thermal Impedance Long Creepage Path Thermal Fatigue Resistant Excellent Surge Rating Available JAN/JANTX Slash Sheet MIL-PRF-19500/108
Outline Drawing
Complies with TO-48
Applications
Phase Control Power Supplies Static Switch Battery Chargers Motor Control
Ordering Information
Type
2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692
Voltage VDRM/VRRM IT(AV) Amps
Available JAN/JAN
Dim.
Inches
.330 .505 .880 .544 .562 .152 1.193 .300 .453 .165 .075
Metric(mm)
8.38 12.83 22.35 13.82 14.27 3.86 30.30 7.62 11.51 4.19 1.91
.544 .113 .210 .422 .125 .060 .120
13.82 2.87
5.33 10.72 3.18 1.52 3.05 UNF-2A
Semitronics, Commercial Freeport, 11520 (516) 623-9400 (516) 623-6954
Page
Repetitive peak off-state voltage Non-repetitive peak off-state voltage Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage Repetitive peak reverse voltage Non-repetitive peak reverse voltage On-State Current Average On-state Current, 67°C Peak One-Cycle Surge (Non-Repetitive) OnState Current Peak One-Cycle Surge (Non-Repetitive) OnState Current (for Fusing), Critical Rate-of-Rise On-State Current (Repetitive) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Forward Gate Current Peak Reverse Gate Voltage Storage Temperature Operating Temperature Mounting Torque Mounting Torque (metric) Symbol IT(RMS) IT(AV) ITSM ITSM di/dt PG(AV) IFGM TSTORAGE
Discrete Semiconductors Series: 2N681-2N692
Absolute Maximum Ratings, +125°C unless otherwise specified)
2N681 2N687 2N682 2N688 2N683 2N689 93.4 +150 +125 2N684 2N690 2N685 2N691 2N686 2N692 Units Volts Volts Volts Volts Volts Volts Volts Volts Amps Amps Amps Amps 2sec A/µs Watts Watts Volts Amps Volts in-lb kg-cm
DEVICE TYPES 2N681 through 2N692
Electrical Characteristics
Parameter Conditions Symbol IDRM IRRM IDRM IRRM 2N681 13.0 13.0 2N687 10.0 10.0 2N682 13.0 13.0 2N688 Device Types 2N683 13.0 13.0 2N689 2N684 13.0 13.0 2N690 2N685 12.0 12.0 2N691 2N686 11.0 11.0 2N692 Units Voltage, Blocking State aximums Forward Leakage, Peak 125°C, Reverse Leakage, Peak 125°C, Forward Leakage, Peak Reverse Leakage, Peak 125°C, 125°C,
DEVICE TYPES 2N681 through 2N692 Current, Conducting State Maximums Peak On-State Voltage Switching Typical Critical dv/dt exponential Maximum Thermal Resistance Junction Case Gate Parameters Gate Current Trigger Gate Voltage Trigger Minimum Non-Triggering Gate Voltage Test Conditions 25°C, 125°C, Gate Open Symbol dv/dt 25°C, 12V, 125°C, 12V, 125°C, 0.30 Units Volts V/µs °C/Watt Volts Volts
Semitronics, Commercial Freeport, 11520 (516) 623-9400 (516) 623-6954
Page
Discrete Semiconductors Series: 2N681-2N692
Semitronics, Commercial Freeport, 11520 (516) 623-9400 (516) 623-6954
Page
Discrete Semiconductors Series: 2N681-2N692
Semitronics, Commercial Freeport, 11520 (516) 623-9400 (516) 623-6954
Page
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