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9.50-10.50 2-Watt Internally-Matched Power Issued Date: 04-27-04
Top Searches for this datasheetEIC0910-2 9.50-10.50 2-Watt Internally-Matched Power Issued Date: 04-27-04 9.50-10.50 Bandwidth Input/Output Impedance Matched Ohms +33.5 Output Power Compression Power Gain Compression Power Added Efficiency 22.5 Hermetic Metal Flange Package 100% Tested DESCRIPTION EIC0910-2 high power, highly linear, single stage MFET amplifier flange mount package. This amplifier features Excelics' unique PHEMT transistor technology. Caution! sensitive device. ELECTRICAL CHARACTERISTICS 25°C) SYMBOL P1dB G1dB Id1dB IDSS PARAMETERS/TEST CONDITIONS1 Output Power Compression 9.50-10.50GHz IDSQ 550mA Gain Compression 9.50-10.50GHz IDSQ 550mA Gain Flatness 9.50-10.50GHz IDSQ 550mA Power Added Efficiency Compression IDSQ 550mA 9.50-10.50GHz Drain Current Compression 9.50-10.50GHz Output Order Intermodulation Distortion 2-Tone Test; Pout 22.5 S.C.L2 IDSQ IDSS 10.50GHz 32.5 33.5 UNITS ±0.6 1000 -2.5 1250 -4.0 Saturated Drain Current Pinch-off Voltage Thermal Resistance Notes: Tested with gate resistor. S.C.L. Single Carrier Level. Overall depends case mounting. Specifications subject change without notice. Excelics Semiconductor, Inc. Guigne Drive, Sunnyvale, 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page Revised April 2004 EIC0910-2 ABSOLUTE MAXIMUM RATINGS CONTINUOUS OPERATION1,2 SYMBOL IGSF TSTG CHARACTERISTIC Drain Source Voltage Gate Source Voltage Drain Current Forward Gate Current Input Power Total Power Dissipation Channel Temperature Storage Temperature VALUE -4.5 IDSS compression 150°C -65/+150°C Issued Date: 04-27-04 Notes: Operating device beyond above ratings result permanent damage reduction MTTF. Bias conditions must also satisfy following equation (TCH -TPKG)/RTH; where TPKG temperature package, (VDS IDS) (POUT PIN). PERFORMANCE DATA Typical S-Parameters 25°C, system, de-embedded edge package) IDSQ 550mA 11GHz -1.0 -0.8 -10.0 10.0 -0.8 S[2,2] EIC0910-2 S[1,1] EIC0910-2 9GHz -1.0 FREQ (GHz) -MAG 8.75 9.00 9.25 9.50 9.75 10.00 10.25 10.50 10.75 11.00 11.25 0.801 0.748 0.650 0.522 0.364 0.229 0.227 0.309 0.369 0.399 0.402 -144.750 -164.560 171.690 141.280 101.620 42.070 -31.690 -80.620 -111.080 -134.340 -154.030 Specifications subject change without notice. Excelics Semiconductor, Inc. Guigne Drive, Sunnyvale, 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com -10.0 (dB) DB(|S[2,1]|) EIC0910-2 DB(|S[1,2]|) EIC0910-2 10.0 10.0 10.0 Frequency (GHz) 10.5 -MAG -MAG -MAG 1.666 1.962 2.305 2.669 2.943 3.009 2.929 2.712 2.470 2.254 2.085 55.890 36.560 14.740 -10.520 -38.640 -67.750 -95.780 -122.110 -146.280 -168.390 170.040 0.045 0.059 0.076 0.098 0.117 0.130 0.134 0.132 0.126 0.123 0.117 10.590 -9.970 -32.680 -58.510 -86.820 -115.840 -143.460 -168.960 168.060 146.710 126.180 0.698 0.658 0.600 0.516 0.405 0.288 0.223 0.232 0.276 0.329 0.377 -25.380 -39.760 -57.400 -79.320 -107.410 -144.010 167.180 122.730 93.950 75.830 62.360 page Revised April 2004 EIC0910-2 Issued Date: 04-27-04 Power De-rating Curve Definition Power Dissipation Temperature THIRD-ORDER INTERCEPT POINT Total Power Dissipation Pout [S.C.L.] (dBm) Potentially Unsafe Operating Region Pout IM3/2 Pout Safe Operating Region (2f1-f2) (2f2-f1) (2f2 (2f1 Case Temperature (°C) [S.C.L.] (dBm) Typical Power Data (VDS IDSQ 37.00 36.00 P-1dB (dBm) Typical Data (VDS IDSQ IDSS) Output Power 9.50 GHz, 9.51 P-1dB G-1dB Frequency 10.00 9.00 8.00 7.00 6.00 35.00 34.00 33.00 P-1dB (dBm) 32.00 10.0 10.2 10.4 Frequency (GHz) (dBc) G-1dB (dB) (dBc) G-1dB (dB) 5.00 10.6 Pout [S.C.L.] (dBm) Specifications subject change without notice. Excelics Semiconductor, Inc. Guigne Drive, Sunnyvale, 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page Revised April 2004 EIC0910-2 Issued Date: 04-27-04 PACKAGE OUTLINE Dimensions inches, Tolerance .005 unless otherwise specified SOURCE Excelics EIC0910-2 ORDERING INFORMATION Part Number EIC0910-2 Notes: Grade1 Industrial fTest (GHz) 9.50-10.50 P1dB (min) 32.5 (min)2 -43.0 Contact factory military hi-rel grades. Exact test conditions specified "Electrical Characteristics" table. Specifications subject change without notice. Excelics Semiconductor, Inc. Guigne Drive, Sunnyvale, 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page Revised April 2004 Other recent searchesRM-8 - RM-8 RM-8 Datasheet OX4020A-F1-28-20 - OX4020A-F1-28-20 OX4020A-F1-28-20 Datasheet MT90401 - MT90401 MT90401 Datasheet MTP29N15E - MTP29N15E MTP29N15E Datasheet L2005 - L2005 L2005 Datasheet H11D1 - H11D1 H11D1 Datasheet H11D2 - H11D2 H11D2 Datasheet H11D3 - H11D3 H11D3 Datasheet H11D4 - H11D4 H11D4 Datasheet DP83916EB-AT - DP83916EB-AT DP83916EB-AT Datasheet AT9010 - AT9010 AT9010 Datasheet AT9010B - AT9010B AT9010B Datasheet DP83950EB-AT - DP83950EB-AT DP83950EB-AT Datasheet DP8392 - DP8392 DP8392 Datasheet ACS706ELC-05C - ACS706ELC-05C ACS706ELC-05C Datasheet
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