6.0A Silicon Rectifier Diffused junction High current capability

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6.0A Silicon Rectifier Diffused junction High current capability

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PBPC601-PBPC607
6.0A Silicon Rectifier
Diffused junction High current capability Surge overload rating 125A peak High case dielectric strength 1500V Ideal printed circuit board applications Plastic material underwriters laboratory flammability classification 94V-0
Listed under recognized component index,
file number E95060
Absolute Maximum Ratings
25_C Parameter Repetitive peak reverse voltage =Working peak reverse voltage voltage Blocking Test Conditions Type PBPC601 PBPC602 PBPC603 PBPC604 PBPC605 PBPC606 PBPC607 Symbol VRRM =VRWM Value 1000 -65.+125 Unit
Peak forward surge current Average forward current
TC=50°C, mounted metal chassis TC=50°C, mounted board FR-4 material
IFSM IFAV IFAV Tj=Tstg
Junction storage temperature range
Electrical Characteristics
25_C Parameter Forward voltage Reverse current Rating fusing Diode capacitance Thermal resistance junction case Test Conditions IF=3A TC=25°C TC=100°C VR=4V, f=1MHz Type Symbol RthJC Unit
12.5
Rev. 24-Jun-98
PBPC601-PBPC607
Vishay Lite-On Power Semiconductor Characteristics 25_C unless otherwise specified)
IFSM Peak Forward Surge Current IFAV Average Forward Current
Single Half-Sine-Wave 125°C
Mounted Metal chassis
Mounted Board
Resistive inductive load
Number Cycles
15715
15713
Tamb Ambient Temperature
Figure Max. Average Forward Current Ambient Temperature
Figure Max. Peak Forward Surge Current Number Cycles
Reverse Current
100°C
Forward Current
25°C
25°C Pulse Width
0.01
15714
15716
0.01 Percent Rated Peak Reverse Voltage
Forward Voltage
Figure Typ. Forward Current Forward Voltage
Figure Typ. Reverse Current Percent Rated Peak Reverse Voltage
Rev. 24-Jun-98
PBPC601-PBPC607
Vishay Lite-On Power Semiconductor Dimensions
14478
Case: molded plastic body Polarity: marked body Approx. weight: grams Mounting: through hole screw Mounting torque: Inch-pounds maximum Mounting position: Marking: type number
Rev. 24-Jun-98
PBPC601-PBPC607
Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs Montreal Protocol 1987 London Amendments 1990 intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay-Telefunken products unintended unauthorized application, buyer shall indemnify Vishay-Telefunken against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
Rev. 24-Jun-98

6.0A Silicon Rectifier Diffused junction High current capability

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