10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs These N-channel enh

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10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs These N-channel enh

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RFP10N15
10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs
These N-channel enhancement-mode silicon-gate power field effect transistors designed applications such switching regulators, switching converters, motor drivers, relay drivers, drivers high-power bipolar switching transistors requiring high speed gate-drive power. These types operated directly from integrated circuits. Formerly developmental type TA09192.
Features
10A, 150V rDS(ON) 0.300 Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Symbol
Ordering Information
PART NUMBER RFP10N15 PACKAGE TO-220AB BRAND RFP10N15
NOTE: When ordering, include entire part number.
Packaging
TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
RFP10N15
Absolute Maximum Ratings
25oC, Unless Otherwise Specified RFP10N15 Drain Source Voltage (Note Drain Gate Voltage (RGS 20k) (Note .VDGR Continuous Drain Current Pulsed Drain Current (Note Gate Source Voltage Maximum Power Dissipation Linear Derating Factor Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, TB334. .Tpkg 0.48 UNITS W/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, VDS, 250µA, (Figure Rated BVDSS, Rated BVDSS, 125oC 25V, 1MHz, (Figure RFP10N15 ±100 0.300 2.083 UNITS
oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance(Note Drain Source Voltage (Note Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction Case
IGSS rDS(ON) VDS(ON) td(ON) td(OFF) CISS COSS CRSS
±20V, 10A, 10V, (Figures 10A, 75V, 10V, 14.7 (Figures
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage (Note Diode Reverse Recovery Time NOTES: Pulse Test: Pulse Width 300µs, Duty Cycle Repetitive rating: pulse width limited maximum junction temperature. SYMBOL dISD/dt 100A/µs TEST CONDITIONS UNITS
RFP10N15 Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT
CASE TEMPERATURE (oC)
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
25oC DRAIN CURRENT
PULSE DURATION 80µs DUTY CYCLE 25oC
DRAIN CURRENT
CONTINUOUS OPERATION THIS AREA LIMITED RDS(ON)
VDS, DRAIN SOURCE VOLTAGE 1000 VDS, DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE SATURATION CHARACTERISTICS
IDS(ON), DRAIN SOURCE CURRENT
25oC 125oC rDS(ON), DRAIN SOURCE RESISTANCE PULSE DURATION 80µs DUTY CYCLE
-40oC
PULSE DURATION 80µs DUTY CYCLE
125oC
25oC
-40oC
125oC -40oC VGS, GATE SOURCE VOLTAGE
DRAIN CURRENT
FIGURE TRANSFER CHARACTERISTICS
FIGURE DRAIN SOURCE RESISTANCE DRAIN CURRENT
RFP10N15 Typical Performance Curves
NORMALIZED DRAIN SOURCE RESISTANCE PULSE DURATION 80µs
(Continued)
250µA
NORMALIZED GATE THRESHOLD VOLTAGE
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
1000 1MHz CISS CRSS COSS CISS
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
VDS, DRAIN SOURCE VOLTAGE GATE SOURCE BVDSS VOLTAGE IG(REF) VGS, GATE SOURCE VOLTAGE
CAPACITANCE (pF)
112.5
BVDSS
COSS CRSS VDS, DRAIN SOURCE VOLTAGE
37.5
0.75BVDSS 0.75BVDSS 0.50BVDSS 0.50BVDSS 0.25BVDSS 0.25BVDSS
DRAIN SOURCE VOLTAGE IG(REF) IG(ACT) TIME (µs) IG(REF) IG(ACT)
NOTE: Refer Intersil Applications Notes AN7254 AN7260 FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
RFP10N15 Test Circuits Waveforms
(Continued)
CURRENT REGULATOR
(ISOLATED SUPPLY) SAME TYPE Qg(TOT)
BATTERY
0.2µF
0.3µF
IG(REF) CURRENT SAMPLING RESISTOR
CURRENT SAMPLING RESISTOR IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
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Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
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