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102001 internally matched GOLDMOS intended WCDMA applications from GHz
Top Searches for this datasheetPRELIMINARY 102001* Watts, 2.1-2.2 GOLDMOS Field Effect Transistor 102001 internally matched GOLDMOS intended WCDMA applications from GHz. operates with minimum gain. Nitride surface passivation full gold metallization ensure excellent device lifetime reliability. INTERNALLY MATCHED Guaranteed Performance 2.17 GHz, Output Power Watts Gain Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Traceability Typical Output Power Input Power Output Power (Watts) A-12 2.17 3456 0055 Input Power (Watts) Package 20248 Specifications (100% Tested) Characteristic Gain (VDD POUT 2.17 GHz) WCDMA (VDD POUT 1.30 2.17 GHz) Power Output Compression (VDD 2.17 GHz) Drain Efficiency (VDD POUT 2.17 GHz) Load Mismatch Tolerance (VDD POUT 2.17 -all phase angles frequency test) published data TCASE 25°C unless otherwise indicated. Symbol P-1dB 10:1 Units Watts Note: Specifications this product preliminary subject change without notice. Please contact your Ericsson sales representative further product information. Complete product infromation available site www.ericsson.com/rfpower. PRELIMINARY 102001 Electrical Characteristics Characteristic (100% Tested) Symbol V(BR)DSS IDSS VGS(th) Conditions Units Volts Volts Siemens Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25°C derate Storage Temperature Range Thermal Resistance (TCASE 70°C) TSTG RqJC Symbol VDSS Value 1.667 +150 Unit Watts W/°C °C/W Typical Performance ACPR Efficiency Output Power Capacitance Supply Voltage (pF) ACPR (dBc) Crss ACPR POUT (Avg.) Supply Voltage (Volts) This part internally matched. Measurements finished product will yield these results. Crss (pF) 2.17 Efficiency Case Outline Specifications PRELIMINARY 102001 Package 20248 Ericsson Inc. Microelectronics Morgan Hill, 95037 1-877-GOLDMOS (465-3667) United States 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject change without notice. 2000 Ericsson Inc. EUS/KR 1522-PTF 102001 Rev. 12-21-00 Other recent searchesTSEV81102G0FS - TSEV81102G0FS TSEV81102G0FS Datasheet STM6510 - STM6510 STM6510 Datasheet SSM6N17FU - SSM6N17FU SSM6N17FU Datasheet SLF1255 - SLF1255 SLF1255 Datasheet SLF1255T-6R0M- - SLF1255T-6R0M- SLF1255T-6R0M- Datasheet SLF1255T-100M- - SLF1255T-100M- SLF1255T-100M- Datasheet SLF1255T-150M- - SLF1255T-150M- SLF1255T-150M- Datasheet SLF1255T-220M- - SLF1255T-220M- SLF1255T-220M- Datasheet SLF1255T-330M- - SLF1255T-330M- SLF1255T-330M- Datasheet SLF1255T-470M- - SLF1255T-470M- SLF1255T-470M- Datasheet SLF1255T-680M- - SLF1255T-680M- SLF1255T-680M- Datasheet SLF1255T-101M- - SLF1255T-101M- SLF1255T-101M- Datasheet SLF1255T-151M- - SLF1255T-151M- SLF1255T-151M- Datasheet SLF1255T-221M- - SLF1255T-221M- SLF1255T-221M- Datasheet SLF1255T-331M- - SLF1255T-331M- SLF1255T-331M- Datasheet SLF1255T-471M- - SLF1255T-471M- SLF1255T-471M- Datasheet SLF1255T-681M- - SLF1255T-681M- SLF1255T-681M- Datasheet SLF1255T-102M- - SLF1255T-102M- SLF1255T-102M- Datasheet SLF1255T-152M- - SLF1255T-152M- SLF1255T-152M- Datasheet SF801 - SF801 SF801 Datasheet SF807 - SF807 SF807 Datasheet SC2647 - SC2647 SC2647 Datasheet SC1211VX - SC1211VX SC1211VX Datasheet PM238-115-1751BT-4 - PM238-115-1751BT-4 PM238-115-1751BT-4 Datasheet PM238-230-1751BT-4 - PM238-230-1751BT-4 PM238-230-1751BT-4 Datasheet DS70139F - DS70139F DS70139F Datasheet AN1078 - AN1078 AN1078 Datasheet
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