3000 BROADBAND HIGH OIP3 AMPLIFIER Features Applications

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3000 BROADBAND HIGH OIP3 AMPLIFIER Features Applications

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ECG003
3000
BROADBAND HIGH OIP3 AMPLIFIER Features
Applications
3000 Typical OIP3 Typical OIP3 1900 Highly Reliable InGaP 20.0 Typical Gain 24.0 Typical P1dB 23.0 Typical P1dB 1900 Typical Noise Figure Excellent Stability
Multi-carrier Systems
High Linearity Amplifiers Cellular, PCS,
Package Available
(-B) SOT-89
Description
ECG003 high reliability, high OIP3 amplifier cost SOT-89 package, optimized commercial communications market. device manufactured using advanced Indium Gallium Phosphide Heterojunction Bipolar Transistor (InGaP HBT) technology. amplifier internally matched achieve VSWR high OIP3 over 3000 range. Typical OIP3 39dBm 36dBm 1900 MHz. ECG003 operates with device voltage ECG00x designed Darlington configuration with direct feedback. operation frequency limited only blocking capacitor choke inductor (large values required both cases).
Electrical Specifications
Test Conditions: 110mA 25oC,
SYMBOL P1dB OIP3
PARAMETER Frequency Gain Signal) Output Power pres sion Output Third Order Intercept Input Return Loss Output Return Output Return Nois Figure Device Voltage Output atch without Spurs
1000 2000 3000 1000 2000 1000 2000 3000 1000 3000 1000 2000 3000 1000 2000
LIMITS MIN.
20.0 19.0 18.0 13.0 10.0 10:1 TYP. MAX. 3000
UNIT
TEST CONDITION
Note
Note OIP3 Pout power eter, total 2-tone power) (IM3 (dBc))
CAUTION!
Corp. Subsidiary Enterprises, Ltd. www.eiccorp.com
SS-000375-000 45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902
ECG003
3000
BROADBAND HIGH OIP3 AMPLIFIER
Absolute Maximum Ratings
Device Current Power Input Storage Temperature Ambient Operating Temperature Junction Temperature 85°C Ambient +150 +150
Package Outline
.014 .018" .055 .069"
.114 .122" .016 .020"
.173 .181"
.014 .018" .094 .102" .167"
.014 .017"
.055 .063"
Definitions
Definition This nominal input impedance. requires blocking capacitor large RFin enough handle lowest frequency used. ground connections should directly connected together ground plane PCB. ground connection also serves heatsink. This nominal output impedance. requires bias 110mA through series inductor resistor. bypass capacitor (1.0 micro Farad) side RFout inductor recommended providing instantaneous current during modulated signal. blocking capacitor output with similar requirements input side.
Corp. Subsidiary Enterprises, Ltd.
www.eiccorp.com
SS-000375-000
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902
ECG003
3000
BROADBAND HIGH OIP3 AMPLIFIER Evaluation Board Schematic SOT-89 Recommended Bias Resistor Values (Vcc-Vde)/Icc (Vcc-7.2)/0.110
Approximate Supply Voltage (Vcc based standard values (Ohms)
Evaluation Board Layout
Evaluation Board Materials
RECOMMENDED COMPONENTS SHOWN. EQUIVALENT COMPONENTS USED. LARGER VALUES GIVE BETTER FREQUENCY RESPONSE (<500 MHz) NOTES: UNLESS OTHERWISE SPECIFIED
Corp. Subsidiary Enterprises, Ltd.
www.eiccorp.com
SS-000375-000
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902
ECG003
3000
BROADBAND HIGH OIP3 AMPLIFIER
Figure
Tested Eval Board)
(mA)
+25C -40C +85C
0.00
1.00
2.00
3.00
4.00
5.00
6.00
7.00
8.00
9.00
Figure
P1dB Frequency
Tested Eval Board)
P1dB (dBm)
+25C -40C -85C
1000 1500 2000 2500 3000 3500
Frequency (MHz)
Corp. Subsidiary Enterprises, Ltd.
www.eiccorp.com
SS-000375-000
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902
ECG003
3000
BROADBAND HIGH OIP3 AMPLIFIER
Figure
Gain Frequency
Tested Eval Board)
Gain
+25C -40C +85C
1000 1500 2000 2500 3000 3500
Frequency (MHz)
Figure
Gain Frequency, T=25 degree
Tested Fixture)
(dB)
Frequency (GHz)
Corp. Subsidiary Enterprises, Ltd.
www.eiccorp.com
SS-000375-000
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902
ECG003
3000
BROADBAND HIGH OIP3 AMPLIFIER
Figure
S11, Frequency, T=25 degree
Tested Fixture)
S11, (dB)
Frequency (GHz)
Figure
Reverse Isolation Frequency, T=25 degree
Tested Fixture)
(dB)
Frequency (GHz)
Corp. Subsidiary Enterprises, Ltd.
www.eiccorp.com
SS-000375-000
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902
ECG003
3000
BROADBAND HIGH OIP3 AMPLIFIER
Figure
OIP3 Frequency
Tested Eval Board)
1000 1500 2000 2500 3000 3500 +25C -40C +85C
Ouput (dBm)
Frequency (MHz)
Figure
Noise Figure Frequency
Tested Eval Board)
Noise Figure
1000 1500 2000 2500
Frequency (MHz)
Corp. Subsidiary Enterprises, Ltd.
www.eiccorp.com
SS-000375-000
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902
ECG003
3000
BROADBAND HIGH OIP3 AMPLIFIER
Application Note: Bias Resistor Bias resistor needed Darlington type gain blocks. shown chart, curve shifts with temperature result versus temperature. minimize impact, resistor required maintain gain block operating same current range over temperature. larger voltage drop across bias resistor, more stable operation current will maintained. more voltage drop would sufficient. table bias resistor value given convenience; user find their solution. bias resistor size needs sufficient sustain power dissipation across operation frequency Darlington type amplifier direct feedback through resistors. Therefore operation frequency only limited blocking capacitors choke (L1). When tested fixture, parameters measured down limit network analyzer. Gain flatness versus frequency plastic package plays important role gain versus frequency, well layout. package introduces parasitic inductance. ground plane backside, package connected backside board through holes. holes also introduces inductance. Therefore operates with parasitic grounding inductance which limits frequency response reduces gain into higher frequency. thick will have large parasitic grounding inductance will reduce gain even more several range.
Corp. Subsidiary Enterprises, Ltd.
www.eiccorp.com
SS-000375-000
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902
ECG003
3000
BROADBAND HIGH OIP3 AMPLIFIER
Gain Blocks Series
Introduction Gain Block family made series high reliability Darlington Amplifier. They broad band feedback amplifiers matched ohms operation. amplifier series covers from 10dBm P1dB 23dBm range, with OIP3 40dBm. They packaged typically plastic micro-X package. high power amplifiers SOT89 package better thermal dissipation. parts were designed with thermal resistance provide junction temperatures long lifetime. InGaP offers Reliability Quality proprietary InGaP provides excellent reliability used infrastructure industry. InGaP inherently superior AlGaAs HBT. surface defect density InGaP much lower than AlGaAs. life test InGaP gone through 315oC junction temperature 50kA/cm2 over 6000 hours months), translating millions hours lifetime normal operating conditions [1]. This life test result superior conventional AlGaAs HBT, well many other reported InGaP HBT.
time Product Burn-in life Infant failure Normal
Time
Drawing show consistency life test burn-in
lifetime ACLT (Accelerated lifetime testing)
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SS-000375-000
Product Burn-in time
Corp. Subsidiary Enterprises, Ltd.
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902
ECG003
3000
BROADBAND HIGH OIP3 AMPLIFIER
InGaP product would through product burn-in test well. large sample group, usually pieces, goes through burn-in test ambient temperature 1000 hours. calculated based number failed devices, activation energy, etc. MTTF simply 1/FIT. This MTTF should agree with life test result when dominant failure mechanism (not other components like resistor, inductor, capacitor, etc). agreement between MTTF from life test essential: validates both tests. there large discrepancy [2], quality claim flawed. Careful Thermal Design Darlington Amplifier Although Darlington Amplifier series high power (<25dBm), thermal design still factor affecting reliability. Even power amplifier, cells closely spaced die, transistor junction temperature still high, negatively affecting reliability. Utilizing EiCs experience Power Amplifiers, each Darlington Amplifier carefully designed laid provide thermal resistance. ballasting also carefully crafted, which must bipolar transistor BJT, SiGe BJT, AlGaAs/GaAs HBT, InGaP/GaAs HBT, family substrate). III. High Linearity known high linearity [3]. Applying this feature Darlington Amplifier, high OIP3 amplifier made. Compared with other transistor technology, InGaP easy process control which allows OIP3 maintained volume production. Broad Frequency Band Operation Darlington Amplifiers designed with direct feedback. There capacitor circuits limit operation frequency. application circuit very simple: blocking capacitors input output, choke inductor output, followed temperature stabilizing resistor. frequency band limited external components: blocking capacitors choke. blocking capacitors must have large value allow signal through: ohms>>1/(C). example, 100MHz, 1000pF capacitor impedance 1/j0.628~-j1.6 ohms, will allow signal through easily; 10pF capacitor impedance ohms, effectively blocked signal. choke similar effect: must large enough frequency compared with ohms. 100MHz, 1000nH will provides shunt impedance
Corp. Subsidiary Enterprises, Ltd.
www.eiccorp.com
SS-000375-000
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902
ECG003
3000
BROADBAND HIGH OIP3 AMPLIFIER
j628ohms effective choke; 100nH will have only j62.8ohms, affecting output matching impedance Darlington Amplifier. high frequency band determined package parasitics transistor's capacitance. package parasitics presented inductance from pin. inductance input output will deviate impedance from 50ohms. inductance 5GHz presents impedance j31.4ohms, sufficient deviate input output return loss. ground inductance will have even more profound effect amplifier performance. transistor parasitic capacitance, which limits frequency bandwidth learned from Electronics 101. higher power amplifier will need larger size HBT, associated large transistor capacitance will reduce frequency bandwidth. Therefore frequency bandwidth high power version will more limited than power ones. Since amplifier drives ohms load directly, high power amplifier will need deliver more current sustain more voltage swings. Therefore high power amplifier will need biased higher voltage draw more bias current. amplifier needs operate with very broad frequency band, external components need carefully traded off. large capacitor will have selfresonance frequency (SRF), turns inductive above SRF. Multiple capacitors need used parallel. also true inductors. Temperature Stabilization bipolar transistors have negative temperature coefficient Vbe(temperature). BJT, about -2mV/oC, GaAs -1mV/oC. result, curve circuit will shift lower voltage temperature rises. This more severe circuit with twice large temperature coefficient. amplifier directly connected power supply through choke, heating will cause more current flow into amplifier, higher current causes more heating, more current, more heating, finally circuit will reach thermal selfdestruction. solution very simple: have resistor inserted between power supply choke. heating causes more current flow, resistor will force amplifier drop. Vde*Icc lower than original value, heating reduced overall circuit stabilized. Therefore there minimal resistor value stable temperature operation.
Corp. Subsidiary Enterprises, Ltd.
www.eiccorp.com
SS-000375-000
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902
ECG003
3000
BROADBAND HIGH OIP3 AMPLIFIER
Conclusion EiC's InGaP Darlington Amplifier Series complete family high reliability, high performance matched gain blocks. Careful thermal design assures cool operating temperature. Cross-check between product burn-in transistor life test result validates both tests. This series products will best serve infrastructure market.
Reference "InGaP HBTs offer Enhanced Reliability", Barry Lin, Applied Microwave Wireless. 115-116, Dec. 2000 Darrel Hill, John Parsey, "Motorola Digital Laboratory, 2100 Elliot Rd., Tempe, Arizona 85284 N.L. Wang, W.J.Ho, J.A. Higgins, "AlGaAs/GaAs Linearity Characteristics", Trans. Microwave Theory Tech., pp.1845-1850, vol. no.10, Oct. 1994
Corp. Subsidiary Enterprises, Ltd.
www.eiccorp.com
SS-000375-000
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902
ECG003
3000
BROADBAND HIGH OIP3 AMPLIFIER
Corp. Subsidiary Enterprises, Ltd.
www.eiccorp.com
SS-000375-000
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902
ECG003
3000
BROADBAND HIGH OIP3 AMPLIFIER
Corp. Subsidiary Enterprises, Ltd.
www.eiccorp.com
SS-000375-000
45738 Northport Loop West, Fremont, 94538 Phone: (510) 979-8999 Fax: (510) 979-8902

3000 BROADBAND HIGH OIP3 AMPLIFIER Features Applications

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