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HIGH VOLTAGE FAST-SWITCHING POWER DARLINGTON TRANSISTOR Fully Pla


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BU808DFH
HIGH VOLTAGE FAST-SWITCHING POWER DARLINGTON TRANSISTOR
Fully Plastic TO-220 HIGH VOLTAGE APPLICATIONS MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE HIGH VOLTAGE CAPABILITY 1400 HIGH CURRENT GAIN TYP. BASE-DRIVE REQUIREMENTS DEDICATED APPLICATION NOTE AN1184 FULLY INSULATED PACKAGE (U.L. COMPLIANT) EASY MOUNTING CREEPAGE PATH TO-220FH
(see page
APPLICATIONS COST EFFECTIVE SOLUTION HORIZONTAL DEFLECTION INCHES. DESCRIPTION BU808DFH transistor monolithic Darlington configuration. manufactured using Multiepitaxial Mesa technology cost-effective high performance.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol isol Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation Insulation Withstand Voltage (RMS) from Three Leads Exernal Heatsink Storage Temperature Max. Operating Junction Temperature Value 1400 2500 Unit
April 2002
BU808DFH
THERMAL DATA
thj-case Thermal Resistance Junction-case 2.98
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbol CE(sat) BE(sat) Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain INDUCTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time Diode Forward Voltage Test Conditions 1400 Min. Typ. Max. Unit
BE(off) BE(off)
Pulsed: Pulse duration duty cycle
Safe Operating Area
Thermal Impedance
BU808DFH
Derating Curve Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Power Losses
Switching Time Inductive Load 16KHz
BU808DFH
Switching Time Inductive Load 16KHZ Reverse Biased
BASE DRIVE INFORMATION order saturate power switch reduce conduction losses, adequate direct base current provided lowest gain (line scan phase). other hand, negative base current must provided turn power transistor (retrace phase). Most dissipation, deflection application, occurs switch-off. Therefore essential determine value which minimizes power losses, fall time and, consequently, curves have been defined give total power losses, function both scanning frequencies choosing optimum negative drive. test circuit illustrated figure Inductance serves control slope negative base current recombine excess carrier collector when base current still present, this would avoid tailing phenomenon collector current. values calculated from following equations: (IC)2 (VCEfly)2 Where operating collector current, VCEfly= flyback voltage, frequency oscillation during retrace.
BU808DFH
Figure Inductive Load Switching Test Circuits.
Figure Switching Waveforms Deflection Circuit
BU808DFH
TO-220FH (Fully plastic High voltage) MECHANICAL DATA
DIM. MIN. 15.9 14.5 28.6 16.4 0.626 0.354 0.570 0.094 0.45 0.75 4.95 30.6 10.6 1.126 0.385 0.134 0.645 0.366 0.590 TYP. MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.051 0.051 0.195 0.094 0.393 0.630 1.204 0.417 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.070 0.070 0.204 0.106 0.409
P011W
BU808DFH
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo trademark STMicroelectronics 2002 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States. http://www.st.com

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