HIGH VOLTAGE SILICON POWER TRANSISTOR STMicroelectronics PREFERRE
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BU326A
HIGH VOLTAGE SILICON POWER TRANSISTOR
STMicroelectronics PREFERRED SALESTYPE TRANSISTOR FAST SWITCHING SPEED
APPLICATIONS: POWER SUPPLIES LINEAR SWITCHING INDUSTRIAL EQUIPMENT
TO-3
DESCRIPTION BU326A silicon multiepitaxial mesa transistor Jedec TO-3 metal case particularly intended switch-mode supply system.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation case Storage Temperature Max. Operating Junction Temperature Value Unit
December 2000
BU326A
THERMAL DATA
thj-case Thermal Resistance Junction-case 2.33
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbol Parameter Collector Cut-off Current Emitter Cut-off Current Test Conditions Min. Typ. Max. Unit
CEO(sus) Collector-Emitter Sustaining Voltage(I CE(sat) BE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Turn-on Time Storage Time Fall Time
1.25 1.25
Pulsed: Pulse duration duty cycle
BU326A
TO-3 MECHANICAL DATA
MIN. 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193
DIM.
P003F
BU326A
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