SILICON SWITCHING TRANSISTORS STMicroelectronics PREFERRED SALEST
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2N6107 2N6111
SILICON SWITCHING TRANSISTORS
STMicroelectronics PREFERRED SALESTYPE TRANSISTORS
APPLICATIONS: LINEAR SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION 2N6107 2N6111 epitaxial-base silicon transistors Jedec TO-220 plastic package. They intended wide variety medium power switching linear applications.
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter 2N6107 Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation Storage Temperature Max. Operating Junction Temperature Value 2N6111
Unit
devices voltage current values negative
February 2001
2N6107/2N6111
THERMAL DATA
thj-case thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient 3.12
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbol Parameter Collector Cut-off Current 1.5V) Test Conditions 2N6107 2N6111 2N6107 2N6111 Min. Typ. Max. Unit
Collector Cut-off Current Emitter Cut-off Current
2N6107 2N6111 2N6107 2N6111 2N6107 2N6111
CEO(sus) Collector-emitter Sustaining Voltage CER(sus) Collector-emitter Sustaining Voltage CE(sat) Collector-emitter Saturation Voltage Base-emitter Voltage
2N6107 2N6111 2N6107 2N6111 2N6107 2N6111
BE(on)
Current Gain
Small Signal Current Gain Transition-Frequency Collector-base Capacitance
Pulsed: Pulse duration duty cycle types voltage current values negative. characteristic curves bd534 (PNP) series.
2N6107/2N6111
TO-220 MECHANICAL DATA
DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
P011C
2N6107/2N6111
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