SILICON POWER DARLINGTON TRANSISTOR STMicrolectronics PREFERRED S

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SILICON POWER DARLINGTON TRANSISTOR STMicrolectronics PREFERRED S

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2N6059
SILICON POWER DARLINGTON TRANSISTOR
STMicrolectronics PREFERRED SALESTYPE HIGH GAIN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
TO-3
APPLICATIONS LINEAR SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION 2N6059 silicon Epitaxial-Base transistor monolithic Darlington configuration mounted Jedec TO-3 metal case. inteded power linear frequency switching applications.
INTERNAL SCHEMATIC DIAGRAM
Typ.
Typ.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Collector-Base Voltage Collector-Emitter Voltage -1.5V) Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Total Dissipation Storage Temperature Max. Operating Junction Temperature Value Unit
February 2003
2N6059
THERMAL DATA
thj-case Thermal Resistance Junction-case 1.17
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbol Parameter Collector Cut-off Current -1.5V) Collector Cut-off Current Emitter Cut-off Current Test Conditions rated rated Min. Typ. Max. Unit
CEO(sus) Collector-Emitter Sustaining Voltage CE(sat) BE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Current Gain Transition frequency
Pulsed: Pulse duration duty cycle
2N6059
TO-3 MECHANICAL DATA
MIN. 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193
DIM.
P003F
2N6059
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SILICON POWER DARLINGTON TRANSISTOR STMicrolectronics PREFERRED S

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