HIGH CURRENT SILICON POWER TRANSISTOR STMicroelectronics PREFERRE

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HIGH CURRENT SILICON POWER TRANSISTOR STMicroelectronics PREFERRE

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2N5886
HIGH CURRENT SILICON POWER TRANSISTOR
STMicroelectronics PREFERRED SALESTYPE HIGH CURRENT CAPABILITY
APPLICATIONS GENERAL PURPOSE SWITCHING AMPLIFIER LINEAR SWITCHING INDUSTRIAL EQUIPMENT
TO-3
DESCRIPTION 2N5886 silicon Epitaxial-Base power transistor mounted Jedec TO-3 metal case. inteded power linear amplifiers switching applications.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Total Dissipation Storage Temperature Max. Operating Junction Temperature Value Unit
January 2000
2N5886
THERMAL DATA
thj-case Thermal Resistance Junction-case 0.875
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbol Parameter Collector Cut-off Current -1.5V) Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Test Conditions Min. Typ. Max. Unit
CEO(sus) Collector-Emitter Sustaining Voltage CE(sat) BE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Current Gain
6.25 6.25 1KHz 1MHz
Small Signal Current Gain Transition frequency Collector Base Capacitance RESISTIVE LOAD Rise Time Storage Time Fall Time
-IB2
Pulsed: Pulse duration duty cycle
2N5886
TO-3 MECHANICAL DATA
MIN. 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193
DIM.
P003F
2N5886
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HIGH CURRENT SILICON POWER TRANSISTOR STMicroelectronics PREFERRE

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