MICROWAVE DISCRETE POWER TRANSISTORS Silicon NPN, To-39 packaged

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MICROWAVE DISCRETE POWER TRANSISTORS Silicon NPN, To-39 packaged

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2N3866 2N3866A
MICROWAVE DISCRETE POWER TRANSISTORS
Silicon NPN, To-39 packaged VHF/UHF Transistor Specified MHz, 28Vdc Characteristics Output Power Watt Minimum Gain Efficiency Current-Gain Bandwidth Product
Emitter Base Collector
TO-39
DESCRIPTION:
Silicon transistor, designed equipment. Applications include amplifier; pre-driver, driver, output stages. Also suitable oscillator frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C)
Symbol VCEO VCBO VEBO Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value Unit
Thermal Data
Total Device Dissipation Derate above 28.6 Watts
MSC1067.PDF 3-10-99
2N3866 2N3866A
ELECTRICAL SPECIFICATIONS (Tcase 25°C)
STATIC (off)
Symbol BVCER BVCEO BVCBO BVEBO ICEO ICEX Test Conditions Min. Collector-Emitter Breakdown Voltage mAdc, ohms) Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) Collector-Base Breakdown Voltage mAdc) Emitter-Base Breakdown Voltage mAdc, Collector Cutoff Current (VCE Vdc, Collector Cutoff Current (VCE Vdc, Vdc) Value Typ. Max. Unit
(on)
Current Gain mAdc, Vdc) Both mAdc, Vdc) 2N3866 mAdc, Vdc) 2N3866A Collector-Emitter Saturation Voltage mAdc, mAdc)
VCE(sat)
DYNAMIC
Symbol Test Conditions Min. Current-Gain Bandwidth Product mAdc, Vdc, MHz) Output Capacitance (VCB Vdc, MHz) 2N3866 2N3866A Value Typ. Max. Unit
MSC1067.PDF 3-10-99
2N3866 2N3866A
FUNCTIONAL
Symbol Power Gain Test Conditions Min. Test Circuit-Figure 28Vdc MHz, Test Circuit-Figure 28Vdc MHz, Test Circuit-Figure 28Vdc MHz, Value Typ. Max. Unit
Pout
Output Power
Watts
Collector Efficiency
8-60
POUT (RL=50 OHMS)
S=50 OHMS)
8-60
0.9-7
3-35
OHMS 1000
-28V
Figure AMPLIFIER CIRCUIT GPE, POUT, EFFICIENCY SPECIFICATIONS.
TURNS wire, 1/8" long Capacitor values unless otherwise indicated.
TURNS wire, 3/16" long Tuning capacitors variable
MSC1067.PDF 3-10-99
2N3866 2N3866A
Power LNA, General Purpose Discrete Selector Guide
Freq (MHz) Efficiency Freq (MHz) (dB) (mA) (dB) (dB)
11.4 16.5 14.5 15.5 17.8 12.5 17.8 14.5
(mA)
SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72
TO-39 SO-8 POWER MACRO POWER MACRO SO-8 POWER MACRO POWER MACRO
MRF4427, 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179
MRF559 MRF559 2N3866A MRF555 MRF555T MRF559 MRF559 MRF8372,R1,R2 MRF557 MRF557T
0.15 1.75
11.5 11.5 11.5
12.5 12.5 12.5 12.5
TO-39 TO-39 SO-8 TO-72 TO-72 TO-39 TO-72 TO-72 MACRO
2N5109 MRF5943C MRF5943, 2N5179 2N2857 MRF517 MRF904 2N6304 BFR91 BFR96 MRF5812, MRF581A BFR90 BFY90 MRF914 MRF581 MRF586 MRF951 MRF571 BFR91 BFR90
1000 1000 1000 1000
1200 1000 1300 1600 4600 4000 1400 5000 5000 5000 5000 1300 4500 5000 4500 8000 8000 5000 5000
1000
0.75
12.5 12.5 12.5 12.5 12.5 12.5 12.5
MACRO SO-8 MACRO Macro TO-72 TO-72 MACRO TO-39 MACRO MACRO MACRO MACRO
0.45
TO-39 TO-39
MRF545 MRF544
13.5
1400 1500
(Low Power General Purpose) Selection
(LNA General Purpose) Selection Guide
Cost Plastic Package Options
MSC1067.PDF 3-10-99
Macro
Macro
Power
SO-8
Ccb(pF) BVCEO (mA)
Device
Ftau (MHz)
(dB)
Package
BVCEO
Packag
Device
Type
Type
Pout
2N3866 2N3866A
MSC1067.PDF 3-10-99

MICROWAVE DISCRETE POWER TRANSISTORS Silicon NPN, To-39 packaged

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