MICROWAVE DISCRETE POWER TRANSISTORS Silicon NPN, To-72 packaged
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2N2857
MICROWAVE DISCRETE POWER TRANSISTORS
Silicon NPN, To-72 packaged Transistor Current-Gain Bandwidth Product
Maximum Unilateral Gain (typ)
Emitter Base Collector Case
TO-72
DESCRIPTION:
Silicon transistor, designed equipment. Applications include noise amplifier; oscillator, mixer applications.
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C)
Symbol VCEO VCBO VEBO Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value Unit
Thermal Data
Total Device Dissipation Derate above 1.14 mWatts
MSC1066.PDF 3-10-99
2N2857
ELECTRICAL SPECIFICATIONS (Tcase 25°C)
STATIC (off)
Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage mAdc, Collector-Base Breakdown Voltage (IC=1.0 µAdc, IE=0) Emitter-Base Breakdown Voltage µAdc, Collector Cutoff Current (VCE Vdc, Vdc) Value Typ. Max. Unit
(on)
Current Gain mAdc, Vdc)
DYNAMIC
Symbol Test Conditions Min. Current-Gain Bandwidth Product mAdc, Vdc, MHz) Noise Figure Ohms) mAdc, Vdc, MHz) Value Typ. Max. Unit
MSC1066.PDF 3-10-99
2N2857
FUNCTIONAL
Symbol Test Conditions Min. Maximum Unilateral Gain Maximum Available Gain Insertion Gain
mAdc, 10Vdc, mAdc, 10Vdc, mAdc, 10Vdc,
Value Typ. 13.5 10.5 Max. Unit
|S21|
Table Common Emitter S-Parameters,
(MHz)
1000
|S11| 0.457 0.291 0.233 0.212 0.184 0.173 0.192 0.165 0.261 0.083
-121
|S21| 12.49 8.06 3.88 3.36 2.97 2.39 1.89 2.72 1.27
|S12| 0.012 0.018 0.024 0.032 0.037 0.043 0.044 0.055 0.068 0.064
|S22| 0.823 0.712 0.728 0.723 0.711 0.717 0.72 0.731 0.746 0.749
-100 -115 -131 -148
MSC1066.PDF 3-10-99
2N2857
MSC1066.PDF 3-10-99
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