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AVAILABLE MILITARY SPECIFICATIONS AS58C1001 ASSIGNMENT (Top
Top Searches for this datasheetAustin Semiconductor, Inc. 128K EEPROM Memory AVAILABLE MILITARY SPECIFICATIONS AS58C1001 ASSIGNMENT (Top View) 32-Pin SF), 32-Pin CSOJ (DCJ) RDY/BUSY\ RES\ 5962-38267 MIL-STD-883 FEATURES High speed: 150, 200, 250ns Data Retention: Years power dissipation, active current (20mW/MHz (TYP)), standby current (100µW(MAX)) Single (+10%) power supply Data Polling Ready/Busy Signals Erase/Write Endurance (10,000 cycles page mode) Software Data protection Algorithm Data Protection Circuitry during power on/off Hardware Data Protection with Automatic Programming: Automatic Page Write: 10ms (MAX) Byte page size GENERAL DESCRIPTION Austin Semiconductor, Inc. AS58C1001 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized 131, bits. AS58C1001 capable system electrical Byte Page reprogrammability. AS58C1001 achieves high speed access, power consumption, high level reliability employing advanced MNOS memory technology CMOS process circuitry technology CMOS process circuitry technology. This device 128-Byte Page Programming function make erase write operations faster. AS58C1001 features Data Polling Ready/Busy signal indicate completion erase programming operations. This EEPROM provides several levels data protection. Hardware data protection provided with pin, addition noise protection signal write inhibit during power off. Software data protection implemented using JEDEC Optional Standard algorithm. AS58C1001 designed high reliability most demanding applications. Data retention specified years erase/write endurance guaranteed minimum 10,000 cycles Page Mode. OPTIONS MARKINGS Timing 150ns access 200ns access 250ns access Packages Ceramic Flat Pack Radiation Shielded Ceramic Ceramic Operating Temperature Ranges -Military (-55oC +125oC) -Industrial (-40oC +85oC) *NOTE: Package connected ground (Vss). NAME I/O0 I/O7 RDY/Busy\ RES\ AS58C1001 Rev. 3/01 FUNCTION Address input Data input/output Output enable Chip enable Write enable Power supply Ground Ready busy Reset more products information please visit site www.austinsemiconductor.com Austin Semiconductor, Inc. reserves right change products specifications without notice. Austin Semiconductor, Inc. AS58C1001 FUNCTIONAL BLOCK DIAGRAM High Voltage Generator I/O0 I/O7 Ready/Busy Buffer Input Latch Control Logic Timing RES\ Decoder Gating Address Buffer Latch Decoder Memory Array Data Latch MODE SELECTION MODE READ STANDBY WRITE DESELECT WRITE INHIBIT DATA POLLING PROGRAM Notes: RDY/Busy\ output only active HIGH impedance state. HIGH (VOH) state. AS58C1001 Rev. 3/01 Austin Semiconductor, Inc. reserves right change products specifications without notice. RES\ RDY/BUSY\ High-Z High-Z DOUT High-Z High-Z -Data (I/O7) High-Z High-Z High-Z -VOL High-Z Austin Semiconductor, Inc. FUNCTIONAL DESCRIPTION AUTOMATIC PAGE WRITE Page Write feature allows Bytes data written into EEPROM single cycle allows undefined data within Bytes written corresponding undefined address A6). Loading first Byte data, data load window 30µs opens second. same manner each additional Byte data loaded within 30µs. case kept high 100µs after data input, EEPROM enters erase write automatically only input data written into EEPROM. Page mode data written accessed times page, Byte mode times Byte. AS58C1001 PROGRAMMING/ERASE 58C1001 does employ BULK-erase function. memory cells programmed `1'. write cycle performs function erase write every cycle with erase being transparent user. internal erase data state considered `1'. program memory array with background 1's, user would program this data using page mode write operation program 1024 128-byte pages. DATA PROTECTION protect data during operation power on/off, AS58C1001 has: Data protection against Noise Control Pins (CE\, OE\, WE\) during Operation. During readout standby, noise control pins trigger turn EEPROM programming mode mistake. prevent this phenomenon, AS58C1001 noise cancellation function that cuts noise width 20ns less programming mode. careful allow noise width more than 20ns control pins. DATA\ POLLING Data\ Polling allows status EEPROM determined. EEPROM Read mode during Write cycle, inversion last Byte data loaded outputs from I/O, indicate that EEPROM performing Write operation. WRITE PROTECTION Noise protection: Noise write cycle will trigger with pulse less than 20ns. Write inhibit: Holding low, high high, inhibits write cycle during power on/off. OPERATION During write cycle, addresses latched falling edge CE\, data latched rising edge CE\. WRITE/ERASE ENDURANCE DATA RETENTION endurance with page programming cycles cumulative failure rate) data retention time more than years when device programmed less than cycles. RDY/Busy\ SIGNAL RDY/Busy\ signal also allows status EEPROM determined. RDY/Busy\ signal high impedance except write cycle lowered after first write signal. write cycle, RDY/Busy\ signal changes state high impedance. This allows many 58C1001 devices RDY/Busy\ signal lines wired-OR together. AS58C1001 Rev. 3/01 Austin Semiconductor, Inc. reserves right change products specifications without notice. Austin Semiconductor, Inc. (EXAMPLE) AS58C1001 RES\ *unprogrammable *unprogrammable FUNCTIONAL DESCRIPTION (continued) Write Address DATA PROTECTION (continued) Data protection on/off. When RES\ low, EEPROM cannot erased programmed. Therefore, data protected keeping RES\ when switched. RES\ should high during programming because does provide latch function. When turned off, noise control pins generated external circuits (CPU, etc.) turn EEPROM programming mode mistake. prevent this unintentional programming, EEPROM must kept unprogrammable, standby readout state using reset signal RES\ pin. addition, when RES\ kept high on/off timing, input level control pins (CE\, OE\, WE\) must held CE\=Vcc OE\=LOW WE\=Vcc level. Software Data Protection protect against unintentional programming caused noise generated external circuits, AS58C1001 Software data protection function. initate Software data protection mode, bytes data must input, followed dummy write cycle address data byte. This exact sequence switches device into protection mode. This cycle during write required initiate physically writes address data. While entire array protected which writes only occur exact sequence re-executed unprotect sequence executed. Write Data (Normal Data Input) 5555 2AAA 5555 Software data protection mode cancelled inputting following Bytes. This changes AS58C1001 Non-Protection mode, normal operation. Address 5555 2AAA 5555 5555 2AAA 5555 Data AS58C1001 Rev. 3/01 Austin Semiconductor, Inc. reserves right change products specifications without notice. Austin Semiconductor, Inc. ABSOLUTE MAXIMUM RATINGS* Voltage Supply Relative Vss.-0.5V +7.0V1 Voltage Relative Vss.-0.6V +7.0V1 Storage Temperature .-65°C +150°C Operating Temperature Range.-55oC +125oC Soldering Temperature Range.260oC Maximum Junction Temperature**.+150°C Power Dissipation.1.0W AS58C1001 *Stresses greater than those listed under "Absolute Maximum Ratings" cause permanent damage device. This stress rating only functional operation device these other conditions above those indicated operation section this specification implied. Exposure absolute maximum rating conditions extended periods affect reliability. Junction temperature depends upon package type, cycle time, loading, ambient temperature airflow. ELECTRICAL CHARACTERISTICS RECOMMENDED OPERATING CONDITIONS (-55oC 125oC; +10%) PARAMETER Input High (Logic Voltage Input (Logic Voltage Input Voltage (RES\ Pin) Input Leakage Current Output Leakage Current Output High Voltage Output Voltage CONDITION SYMBOL -0.3 Vcc-0.5 0.3V +1.0 UNITS NOTES Output(s) disabled, VOUT -400 PARAMETER CONDITIONS IOUT=OmA, 5.5V Cycle=1µS, Duty=100% UNITS NOTES Power Supply Current: Operating ICC3 IOUT=OmA, 5.5V Cycle=MIN, Duty=100% CE\=Vcc, 5.5V Power Supply Current: Standby CE\=VIH, 5.5V ICC1 ICC2 CAPACITANCE PARAMETER Input Capacitance Output Capactiance CONDITIONS 1MHz SYMBOL UNITS NOTES AS58C1001 Rev. 3/01 Austin Semiconductor, Inc. reserves right change products specifications without notice. Austin Semiconductor, Inc. AS58C1001 ELECTRICAL CHARACTERISTICS READ OPERATION (-55oC 125oC; +10%) Test Conditions Input Pulse Levels: Input rise fall times: Output Load: Reference levels measuring timing: 0.0V 3.0V 20ns Gate +100pF (including scope jig) 1.5V, 1.5V ELECTRICAL CHARACTERISTICS SOFTWARE DATA PROTECTION CYCLE OPERATION PARAMETER Byte Load Cycle Time Write Cycle Time SYMBOL tBLC 0.55 -UNITS ELECTRICAL CHARACTERISTICS DATA\ POLLING OPERATION PARAMETER Output Enable Hold Time Output Enable Write Setup Time Write Start Time Write Cycle Time SYMBOL tOEH tOES -MAX UNITS AS58C1001 Rev. 3/01 Austin Semiconductor, Inc. reserves right change products specifications without notice. Austin Semiconductor, Inc. AS58C1001 ELECTRICAL CHARACTERISTICS PAGE ERASE PAGE WRITE OPERATIONS AS58C1001 Rev. 3/01 Austin Semiconductor, Inc. reserves right change products specifications without notice. Austin Semiconductor, Inc. AS58C1001 ELECTRICAL CHARACTERISTICS BYTE ERASE BYTE WRITE OPERATIONS PARAMETER Address Setup Time Chip Enable Write Setup Time Write Pulse Width Address Hold Time Data Setup Time Data Hold Time Chip Enable Hold Time Enable Write Setup Time Output Enable Hold Time Write Cycle Time Byte Load Window Time Device Busy RES\ Write Setup Time RES\ Setup Time SYMBOL UNITS tOES tOEH tRES TEST CONDITIONS Input Pulse Levels.0V Input Rise Fall Times.<20ns Input Timing Reference Level.1.5V Output Reference Level.1.5V Output Load.See Figure NOTES: Relative -3.0V pulse widths <50ns -1.0V pulse widths <50ns RES\ 100ua defined time which output becomes open circuit data longer driven. this device longer cycle than this value controlled operation controlled operation RES\ Reference only, tested 100pF GATE Figure OUTPUT LOAD EQUIVALENT AS58C1001 Rev. 3/01 Austin Semiconductor, Inc. reserves right change products specifications without notice. Austin Semiconductor, Inc. READ TIMING WAVEFORM Address Data RES\ SOFTWARE DATA PROTECTION TIMING WAVEFORM (protection mode) High-Z Data Valid tDFR tACC AS58C1001 tBLC AAAA 2AAA tBLC tBLC Address Data 5555 5555 During this write cycle, data physically written address provided. SOFTWARE DATA PROTECTION TIMING WAVEFORM (non-protection mode) AAAA 2AAA AAAA 2AAA Write Address* Write Data Normal active mode Address Data AS58C1001 Rev. 3/01 5555 5555 5555 5555 Austin Semiconductor, Inc. reserves right change products specifications without notice. Austin Semiconductor, Inc. AS58C1001 DATA\ POLLING TIMING WAVEFORM Address tOEH tOES DOUT DOUT I/O7 TOGGLE WAVEFORM Next Mode Address tOEH DOUT DOUT tOES I/O7 transition from AS58C1001 Rev. 3/01 Austin Semiconductor, Inc. reserves right change products specifications without notice. 4321 4321 4321 Austin Semiconductor, Inc. PAGE WRITE TIMING WAVEFORM (WE\ CONTROLLED) AS58C1001 tBLC tOES RDY/Busy\ High-Z RES\ tRES transition from AS58C1001 Rev. 3/01 2132121 432321 2132121 2132321 2132321 432321 2132321 2132321 2432321 2132321 2132321 2432121 tOEH High-Z Austin Semiconductor, Inc. reserves right change products specifications without notice. Austin Semiconductor, Inc. AS58C1001 PAGE WRITE TIMING WAVEFORM (CE\ CONTROLLED) Address tBLC tOES RDY/Busy\ High-Z RES\ AS58C1001 Rev. 3/01 tOEH High-Z transition from Austin Semiconductor, Inc. reserves right change products specifications without notice. Austin Semiconductor, Inc. BYTE WRITE TIMING WAVEFORM (WE\ CONTROLLED) AS58C1001 Address RDY/Busy\ High-Z High-Z RES\ transition from AS58C1001 Rev. 3/01 Austin Semiconductor, Inc. reserves right change products specifications without notice. Austin Semiconductor, Inc. BYTE WRITE TIMING WAVEFORM (CE\ CONTROLLED) AS58C1001 Address RDY/Busy\ High-Z High-Z RES\ transition from AS58C1001 Rev. 3/01 Austin Semiconductor, Inc. reserves right change products specifications without notice. Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* Case #305 (Package Designator 5962-38267, Case Outline AS58C1001 View SYMBOL *All measurements inches. AS58C1001 Rev. 3/01 SPECIFICATIONS 0.125 0.150 0.090 0.110 0.015 0.019 0.003 0.007 0.810 0.830 0.775 0.785 0.745 0.755 0.425 0.445 0.290 0.310 0.045 0.055 1.000 1.100 0.290 0.310 0.026 0.037 Austin Semiconductor, Inc. reserves right change products specifications without notice. Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* Case #306 (Package Designator 5962-38267, Case Outline AS58C1001 View SYMBOL SPECIFICATIONS 0.097 0.123 0.090 0.110 0.015 0.019 0.003 0.007 0.810 0.830 0.745 0.755 0.425 0.445 0.330 0.356 0.045 0.055 1.000 1.100 0.290 0.310 0.026 0.037 NOTE: drawings SMD. ASI's package dimensional limits differ, they will within limits. *All measurements inches. AS58C1001 Rev. 3/01 Austin Semiconductor, Inc. reserves right change products specifications without notice. Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* Case #508 (Package Designator DCJ) AS58C1001 SYMBOL PACKAGE SPECIFICATIONS 0.132 0.142 0.076 0.086 0.018 0.028 0.018 0.032 0.015 0.019 0.816 0.834 0.745 0.755 0.430 0.440 0.465 0.485 0.415 0.425 0.045 0.055 *All measurements inches. AS58C1001 Rev. 3/01 Austin Semiconductor, Inc. reserves right change products specifications without notice. Austin Semiconductor, Inc. AS58C1001 ORDERING INFORMATION EXAMPLE: AS58C1001F-25/XT Device Number AS58C1001 AS58C1001 AS58C1001 Package Type Speed Process EXAMPLE: AS58C1001SF-15/IT Device Number AS58C1001 AS58C1001 AS58C1001 Package Speed Process Type EXAMPLE: AS58C1001DCJ-20/IT Device Number AS58C1001 AS58C1001 AS58C1001 Package Type Speed Process *AVAILABLE PROCESSES Industrial Temperature Range Extended Temperature Range 883C Full Military Processing -40oC +85oC -55oC +125oC -55oC +125oC AS58C1001 Rev. 3/01 Austin Semiconductor, Inc. reserves right change products specifications without notice. Austin Semiconductor, Inc. AS58C1001 DSCC PART NUMBER CROSS REFERENCE* Package Designator Part AS58C1001F-25/883C AS58C1001F-20/883C AS58C1001F-15/883C Part# 5962-3826716QMA 5962-3826717QMA 5962-3826718QMA Package Designator Part AS58C1001SF-25/883C AS58C1001SF-20/883C AS58C1001SF-15/883C Part# 5962-3826716QNA 5962-3826717QNA 5962-3826718QNA Package Designator currenly available SMD. part number reference only. Orders received referencing part number will processed SMD. AS58C1001 Rev. 3/01 Austin Semiconductor, Inc. reserves right change products specifications without notice. Other recent searchesXVG2LUR147D - XVG2LUR147D XVG2LUR147D Datasheet SOX18 - SOX18 SOX18 Datasheet SA23-11SRWA - SA23-11SRWA SA23-11SRWA Datasheet MC68LC302 - MC68LC302 MC68LC302 Datasheet MC145500 - MC145500 MC145500 Datasheet GRM188C80G475K - GRM188C80G475K GRM188C80G475K Datasheet DMG4800LK3 - DMG4800LK3 DMG4800LK3 Datasheet 504102b00100 - 504102b00100 504102b00100 Datasheet
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