N-Channel 20-V (D-S) MOSFET with Copper Leadframe Characteristics
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SPICE Device Model Si1410EDH
N-Channel 20-V (D-S) MOSFET with Copper Leadframe Characteristics
N-channel Vertical DMOS Macro-Model (Sub-circuit) Level Applicable Both Linear Switch Mode Applicable Over 125°C Temperature Range Models Gate Charge, Transient, Diode Reverse Recovery Characteristics
attached SPICE Model describes typical electrical characteristics n-channel vertical DMOS. sub-circuit model extracted optimized over -55°C 125°C temperature range under pulse conditions volts gate drives. Saturated output impedance model accuracy been maximized gate biases near threshold voltage. novel gate-to-drain feedback capacitor network used model gate charge characteristics while avoiding convergence problems switched model. Model parameter values optimized provide best measure electrical data intended exact physical description device.
Model Sub-circuit
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Siliconix 4/13/01 Document: 71501
SPICE Device Model Si1410EDH Model Evaluation N-Channel Device (TJ=25°C Unless Otherwise Noted)
Parameter Static Gate Threshold Voltage On-State Drain Current Drain-Source On-State Resistance Symbol Test Condition Simulated Data 0.56 0.055 0.067 0.082 0.75 0.75 1.10 0.97 Measured Data Unit
VGS(th) ID(on) rDS(on)
Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
td(on) td(off)
VGS, 250µA 4.5V 4.5V, 3.7A 2.5V, 3.4A 1.8V, 1.7A 10V, 3.7A 1.4A,
0.055 0.065 0.080 0.75 0.75 1.10 0.15
10V, 4.5V, 3.7A
10V, VGEN 4.5V,
Notes: Pulse test; pulse width duty cycle Guaranteed design, subject production testing
Siliconix 4/13/01 Document: 71501
SPICE Device Model Si1410EDH
Comparison Model with Measured Data (TJ=25°C Unless Otherwise Noted)
Vgs= 5,3,2.5,2V
125C -55C
Vgs=1.5V
Drain Current
Vgs=1V
Gate-to-Source Voltage
Sqrt(
(ohm)
0.15 0.12
Sqrt (Ids)
(ohm)
0.09 0.06
Vgs=1.8V Vgs=2.5V
Vgs=4.5V
0.03 0.00
1000
Capacitance (pF)
Ciss
Coss Crss
(nC)
Siliconix 4/13/01 Document: 71501
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