N-Channel Enhancement-Mode MOSFET Chip Geometry NCHT TRENFE

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N-Channel Enhancement-Mode MOSFET Chip Geometry NCHT TRENFE

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GF9926D
N-Channel Enhancement-Mode MOSFET
Chip Geometry
NCHT TRENFE
Gate
RDS(ON) 6.0A
Source
Physical Characteristics
size 1800 1120µm (70.9 44.1 mils) Metalization: Top: Al/Si/Cu Back: Ti/Ni/Ag Metal Thickness: Top: 3.0µm Back: 1.4µm thickness: mils Bonding Area: Source: Full metalized surface source region Gate: 181µm Recommended Wire Bonding: Source: wire more wires preferred) Gate: wire
Note: More source wires further improve performance
Features
Advanced Trench Process Technology High Density Cell Design Ultra On-Resistance Fast Switching High temperature soldering accordance with CECC802/Reflow guaranteed Logic Level Ideal battery pack applications
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150°C(1) Pulsed Drain Current Continuous Source Current (Diode Conduction)(1) Maximum Power Dissipation(1) 25°C 70°C
25°C unless otherwise noted)
Symbol 25°C 70°C Tstg
Limit
Unit
62.5
°C/W
Operating Junction Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance
Note: Maximum ratings based packaged SO-8 Dual package. Actual rating increase decrease), depending actual assembly method used
6/14/00
GF9926D
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(2) Drain-Source On-State Resistance(2) Forward Transconductance(2) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Diode Forward Voltage(2) Source-Drain Reverse Recovery Time
Notes: Surface mounted board, sec. Pulse test; pulse width duty cycle
25°C unless otherwise noted)
Symbol
Test Condition
Unit
BVDSS VGS(th) IGSS IDSS ID(on) RDS(on)
250µA VGS, 250µA 20V, VDS=20V, VGS=0V, TJ=55°C 4.5V 4.5V, 2.5V, 5.2A 10V,
td(on) td(off) Ciss Coss Crss 10V, 4.5V 10V, VGEN 4.5V 1.0MHZ
1240
1.7A, 1.7A, di/dt 100A/µs
td(on) VOUT Output, VOUT
toff td(off)
INVERTED
RGEN
Input,
PULSE WIDTH
Switching Test Circuit
Switching Waveforms
GF9926D
N-Channel Enhancement-Mode MOSFET
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Output Characteristics
4.5V 3.5V 2.5V 3.0V 2.0V
Fig. Transfer Characteristics
Drain Source Current
Drain Current
1.5V
125°C 25°C
-55°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Fig. Threshold Voltage Temperature
VGS(th) Gate-to-Source Threshold Voltage
250µA 0.04 0.035 0.03 0.025
Fig. On-Resistance Drain Current
RDS(ON) On-Resistance
2.5V
4.5V 0.02
0.015 0.01
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
0.08 4.5V
Fig. On-Resistance Gate-to-Source Voltage
RDS(ON) On-Resistance (Normalized)
RDS(ON) On-Resistance
0.06
0.04
125°C
0.02
25°C
Junction Temperature (°C)
Gate-to-Source Voltage
GF9926D
N-Channel Enhancement-Mode MOSFET
Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Gate Charge
1800
Fig. Capacitance
1MHZ 1500
Gate-to-Source Voltage
Capacitance (pF)
Ciss
1200
Coss Crss
Total Gate Charge (nC)
Drain-to-Source Voltage
Fig. Source-Drain Diode Forward Voltage
Fig. Breakdown Voltage Junction Temperature
250µA
Source Current
BVDSS Drain-to-Source Breakdown Voltage
125°C
25°C -55°C
0.01
Source-to-Drain Voltage
Junction Temperature (°C)

N-Channel Enhancement-Mode MOSFET Chip Geometry NCHT TRENFE

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