Features: High Breakdown Voltage, High Reliability Fast Switching Spee

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Features: High Breakdown Voltage, High Reliability Fast Switching Spee

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NTE2594 Silicon Transistor High Voltage, High Current Switch
Features: High Breakdown Voltage, High Reliability Fast Switching Speed Wide Absolute Maximum Ratings: +25°C unless otherwise specified) Collector-Base Voltage, VCBO 800V Collector-Emitter Voltage, VCEO 500V Emitter-Base Voltage, VEBO Collector Current, Continuous Pulsed 300µs, Duty Cycle 10%) Base Current, Collector Dissipation, +25°C +25°C Operating Junction Temperature, +150°C Storage Temperature Range, Tstg -55° +150°C Electrical Characteristics: +25°C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Symbol ICBO IEBO VCE(sat) VBE(sat) Test Conditions 500V, 1.2A Gain Bandwidth Product Output Capacitance Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage 10V, 1.2A 10V, 1MHz 1.2A 1.2A Unit
V(BR)CBO 1mA, V(BR)CEO 5mA, V(BR)EBO 1mA,
Electrical Characteristics (Cont'd): +25°C unless otherwise specified)
Parameter Collector-Emitter Sustaining Voltage Turn-On Time Storage Time Fall Time Symbol Test Conditions Unit VCEX(sus) 500µH, Clamped tstg 5IB1 -2.5IB2 200V, 28.6
.221 (5.6) .123 (3.1)
.134 (3.4) .630 (16.0)
.315 (8.0)
.866 (22.0)
.158 (4.0)
.804 (20.4)
.215 (5.45)
.040 (1.0)

Features: High Breakdown Voltage, High Reliability Fast Switching Spee

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