Description: NTE188 (NPN) NTE189 (PNP) complementary silicon transisto
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NTE188 (NPN) NTE189 (PNP) Silicon Complementary Transistors High Voltage Amplifier Driver
Description: NTE188 (NPN) NTE189 (PNP) complementary silicon transistors TO202N type package designed general purpose, high voltage amplifier driver applications. Features: High Collector-Emitter Breakdown Voltage: V(BR)CEO High Power Dissipation: +25°C Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO Collector-Base Voiltage, Emitter-Base Voltage, Continuous Collector Current, Total Power Dissipation +25°C), Derate Above 25°C 8mW/°C Total Power Dissipation +25°C), Derate Above 25°C 80mW/°C Operating Junction Temperature Range, -55° +150°C Storage Temperature Range, Tstg -55° +150°C Thermal Resistance, Junction-to-Ambient (Note RthJA 125°C/W Thermal Resistance, Junction-to-Case, RthJC 12.5°C/W Note RthJA measured with device soldered into typical printed circuit board. Electrical Characteristics: +25°C unless otherwise specified)
Parameter Characteristics Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current NTE188 NTE189 V(BR)CEO 1mA, Note V(BR)EBO 100µA, ICBO 80V, 60V, Symbol Test Conditions Unit
Note Pulse Test: Pulse Width 300µs, Duty Cycle
Electrical Characteristics (Cont'd): +25°C unless otherwise specified)
Parameter Characteristics (Note Current Gain NTE188 50mA, 250mA, 50mA, NTE189 50mA, 50mA, 50mA, Collector-Emitter Saturation Voltage NTE188 VCE(sat) 250mA, 10mA 250mA, 25mA NTE189 250mA, 10mA 250mA, 25mA Base-Emitter Voltage NTE188 NTE189 Small-Signal Characteristics Current Gain-Bandwidth Product NTE188 NTE189 Output Capacitance NTE188 NTE189 10V, 100MHz 250mA, 100MHz, Note VBE(on) 250mA, 0.18 0.22 0.15 0.76 0.78 Symbol Test Conditions Unit
Note Pulse Test: Pulse Width 300µs, Duty Cycle
.380 (9.65) .050 (1.27) .160 (4.06) .280 (7.25) .128 (3.28)
.100 (2.54)
.218 (5.55)
.995 (25.3)
.475 (12.0)
.100 (2.54) .200 (5.08) Collector Connected
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