Advance CMOS SRAM 256K Super Power Voltage Full CMOS Static

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Advance CMOS SRAM 256K Super Power Voltage Full CMOS Static

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K6F4016R4M Family
Advance CMOS SRAM
256K Super Power Voltage Full CMOS Static
Revision History
Revision History
Initial Draft Revise Speed change 70/100ns 85/100ns characteristics change 0.5mA 0.1mA -0.5mA -0.1mA ISB1 Super power product=1µA 3/1µA(LL/SL, Vcc=1.5V) 3/2µA(LL/SL, Vcc=1.2V) 48-CSP package dimension change thickness 0.32mm 0.45mm 0.80mm 0.93mm 0.55mm 0.68mm Errata correction
Draft Date
April 1998 June 1998
Remark
Advance Advance
0.11
August 1998
attached datasheets provided SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve right change specifications products. SAMSUNG Electronics will answer yourquestions about device. have questions, please contact SAMSUNG branch offices.
Revision 0.11 June 1998
K6F4016R4M Family
Advance CMOS SRAM
256K Power Voltage Full CMOS Static
FEATURES
GENERAL DESCRIPTION
K6F4016R4M families fabricated SAMSUNGs advanced full CMOS process technology. family supports industrial temperature range ball Chip Scale Package user flexibility system design. family also supports data retention voltage battery back-up operation with data retention current.
Process Technology Full CMOS Organization 256K Power Supply Voltage 2.2V Data Retention Voltage 1.0V(Min) Three state output status Compatible Package Type with 0.75mm ball pitch
PRODUCT FAMILY
Power Dissipation Product Family Operating Temperature Range Speed(ns) Standby (ISB1, Typ.) 0.5µA Operating (ICC1, Max) Type
K6F4016R4M-I
Industrial(-40 85°C)
2.2V
851)/100
48-CSP
parameter measured with 30pF test load.
DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
gen. Precharge circuit.
I/O9
I/O1
Addresses
I/O10
I/O11
I/O2
I/O3
select
Memory array 2048 rows columns
I/O12
I/O4
I/O13
I/O5
I/O1~I/O8
Data cont Data cont Data cont
Circuit Column select
I/O15
I/O14
I/O6
I/O7
I/O9~I/O16
I/O16
I/O8 Column Addresses
48-ball View (Ball Down)
Control Logic
Name A0~A17
Function Chip Select Input Output Enable Input Write Enable Input Address Inputs
Name N.C.
Function Power Ground Upper Byte(I/O9~16) Lower Byte(I/O1~8) Connection
1~I/O16 Data Inputs/Outputs
SAMSUNG ELECTRONICS CO., LTD. reserves right change products specifications without notice.
Revision 0.11 June 1998
K6F4016R4M Family
PRODUCT LIST
Industrial Temperature Product (-40~85°C) Part Name K6F4016R4M-ZI85 K6F4016R4M-ZI10 Function 48-CSP with ball, 85ns, 1.8/2.0V 48-CSP with ball, 100ns, 1.8/2.0V
Advance CMOS SRAM
FUNCTIONAL DESCRIPTION
High-Z High-Z High-Z High-Z Dout High-Z Dout High-Z
I/O9~16 High-Z High-Z High-Z High-Z High-Z Dout Dout High-Z
Mode Deselected Deselected Output Disabled Output Disabled Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write
Power Standby Standby Active Active Active Active Active Active Active Active
means dont care. (Must high state)
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage relative Voltage supply relative Power Dissipation Storage temperature Operating Temperature Symbol VIN,VOUT TSTG Ratings -0.2 3.0V -0.2 3.6V Unit
Stresses greater than those listed under "Absolute Maximum Ratings" cause permanent damage device. Functional operation should restricted recommended operating condition. Exposure absolute maximum rating conditions extended periods affect reliability.
Revision 0.11 June 1998
K6F4016R4M Family
RECOMMENDED OPERATING CONDITIONS1)
Item Supply voltage Ground Input high voltage Input voltage
Note Industrial Product TA=-40 85°C, otherwise specified 2.Overshoot case pulse width 20ns 3.Undershoot -1.0 case pulse width 20ns Overshoot undershoot sampled, 100% tested.
Advance CMOS SRAM
Symbol
-0.23)
1.8/2.0
Vcc+0.22)
Unit
CAPACITANCE1) (f=1MHz, TA=25°C)
Item Input capacitance Input/Output capacitance
Capacitance sampled, 100% tested
Symbol
Test Condition VIN=0V VIO=0V
Unit
OPERATING CHARACTERISTICS
Item Input leakage current Output leakage current Operating power supply current Average operating current Output voltage Output high voltage Standby Current(TTL) Standby Current (CMOS)
Symbol
Test Conditions VIN=Vss CS=VIH OE=VIH WE=VIL, VIO=Vss IIO=0mA, CS=VIL, VIN=VIH
Cycle time=1µs, 100%duty, IIO=0mA, CS0.2V, 0.2V VINVCC-0.2V
Unit
ICC1 ICC2 ISB1
Cycle time=Min, IIO=0mA, 100% duty, CS=VIL, VIN=VIH
0.1mA -0.1mA CS=VIH LB=UB=VIH, Other inputs=V
CSVcc-0.2V LB=UBVcc-0.2V, CS0.2V, Other inputs=0~Vcc
Super power product=2µA with special handling.
Revision 0.11 June 1998
K6F4016R4M Family
OPERATING CONDITIONS
TEST CONDITIONS (Test Load Test Input/Output Reference)
Input pulse level Vcc-0.2V Input rising falling time Input output reference voltage 0.9V Output load (See right) :CL= 100pF+1TTL CL=30pF+1TTL
Advance CMOS SRAM
VTM3) R12)
CL1)
R22)
Including scope capacitance R1=3070, =3150 V=1.8V
CHARACTERISTICS (TA=-40 85°C, Vcc=1.7~2.2V)
Speed Bins Parameter List Symbol Read cycle time Address access time Chip select output Output enable valid output Access Time Read Chip select low-Z output enable low-Z output Output enable low-Z output Chip disable high-Z output disable high-Z output Output disable high-Z output Output hold from address change Write cycle time Chip select write Address set-up time Address valid write Valid Write Write Write pulse width Write recovery time Write output high-Z Data write time overlap Data hold from write time write output low-Z tBLZ tOLZ tBHZ tOHZ tWHZ 85ns 100ns Units
DATA RETENTION CHARACTERISTICS
Item data retention Data retention current Data retention set-up time Recovery time Symbol tSDR tRDR Test Condition CSVcc-0.2V1) Vcc= 1.2V, CSVcc-0.2V
Unit
data retention waveform
CSVcc-0.2V(CS controlled) LB=UBVcc-0.2V, CS0.2V(LB, controlled) Super power product=2µA with special handling.
Revision 0.11 June 1998
K6F4016R4M Family
TIMMING DIAGRAMS
TIMING WAVEFORM READ CYCLE(1)
Address Data Previous Data Valid
Advance CMOS SRAM
(Address Controlled, CS=OE=VIL, WE=VIH, or/and LB=VIL)
Data Valid
TIMING WAVEFORM READ CYCLE(2)
(WE=VIH)
Address
tBHZ tOLZ tBLZ Data
High-Z
tOHZ Data Valid
NOTES (READ CYCLE) tOHZ defined time which outputs achieve open circuit conditions referenced output voltage levels. given temperature voltage condition, tHZ(Max.) less than tLZ(Min.) both given device from device device interconnection.
Revision 0.11 June 1998
K6F4016R4M Family
TIMING WAVEFORM WRITE CYCLE(1) Controlled)
Address tCW(2) tWP(1) tAS(3) Data High-Z tWHZ Data Data Undefined Data Valid tWR(4)
Advance CMOS SRAM
High-Z
TIMING WAVEFORM WRITE CYCLE(2) Controlled)
Address tAS(3) tWP(1) Data Data Valid tCW(2) tWR(4)
Data
High-Z
High-Z
Revision 0.11 June 1998
K6F4016R4M Family
TIMING WAVEFORM WRITE CYCLE(3) (UB, Controlled)
Address tCW(2) tAS(3) tWP(1) Data Data Valid tWR(4)
Advance CMOS SRAM
Data
NOTES (WRITE CYCLE)
High-Z
High-Z
write occurs during overlap(tWP) write begins when goes goes with asserting single byte operation simultaneously asserting double byte operation. write ends earliest transition when goes high goes high. measured from beginning write write. measured from going write. measured from address valid beginning write. measured from write address change. applied case write ends going high.
DATA RETENTION WAVE FORM
controlled
1.7V tSDR Data Retention Mode tRDR
1.4V CSVCC 0.2V LB=UBVcc-0.2V
LB/UB
Revision 0.11 June 1998
K6F4016R4M Family
PACKAGE DIMENSIONS
View Ball Bottom View
Advance CMOS SRAM
Unit millimeter(inch) Ball
SRAM
Elastomer Side View Detail 0.25/Typ. Detail
0.68/Typ.
0.45/Typ.
Elastomer 0.3/Typ. Notes. Bump counts 48(8row 6column) Bump pitch (x,y)=(0.75 0.75)(typ.) tolerence +/-0.050 unless otherwise specified. Typical coplanarity 0.08(Max) Revision 0.11 June 1998
8.10 8.60 0.30
0.75 8.20 3.75 8.70 5.25 0.35 0.93 0.68 0.25
8.30 8.80 0.40 0.94 0.08

Advance CMOS SRAM 256K Super Power Voltage Full CMOS Static

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