CMOS SRAM 128K Super Power Voltage Full CMOS Static Revision

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

CMOS SRAM 128K Super Power Voltage Full CMOS Static Revision

Datasheet Thumbnail

Top Searches for this datasheet

K6F2016S4A Family
CMOS SRAM
128K Super Power Voltage Full CMOS Static
Revision History
Revision History
Initial Draft Finalize test condition change: Vcc=1.5V Vcc=1.2V Improve ICC2: 35mA 30mA Improve IDR: 48-CSP package dimension change thickness: 0.32mm 0.45mm 0.80mm 0.93mm 0.55mm 0.68mm Operation voltage range change: 2.4~2.6V 2.3~2.7V Revise Change 1.0V 1.5V Change test condition VCC=1.2V 1.5V
Draft Date
June 1998 November 1998
Remark
Advance Final
1999
Final
attached datasheets provided SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve right change specifications products. SAMSUNG Electronics will answer your questions about device. have questions, please contact SAMSUNG branch offices.
Revision November 1998
K6F2016S4A Family
FEATURES
CMOS SRAM
GENERAL DESCRIPTION
K6F2016S4A families fabricated SAMSUNGs advanced full CMOS process technology. families support industrial temperature range ball Chip Scale Package user flexibility system design. families also support data retention voltage battery back-up operation with data retention current.
128K Super Power Voltage Full CMOS Static
Process Technology: Full CMOS Organization: 128K Power Supply Voltage: 2.3~2.7V Data Retention Voltage: 1.5V(Min) Three state output status Compatible Package Type 48-uBGA-6.00x8.00
PRODUCT FAMILY
Power Dissipation Product Family Operating Temperature Range Speed(ns) Standby (ISB1, Typ.) 0.5µA Operating (ICC1, Max) Type
K6F2016S4A-I
Industrial(-40~85°C)
2.3~2.7V
701)/100
48-uBGA
parameter measured with 30pF test load.
DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
gen. Precharge circuit.
I/O9
I/O1
Addresses
I/O10
I/O11
I/O2
I/O3
select
Memory array 1024 rows columns
I/O12
I/O4
I/O13
I/O5
I/O1~I/O8
Data cont Data cont Data cont
Circuit Column select
I/O15
I/O14
I/O6
I/O7
I/O9~I/O16
I/O16
I/O8 Column Addresses
48-ball View (Ball Down) Name A0~A16 Function Chip Select Input Output Enable Input Write Enable Input Address Inputs Name N.C. Function Power Ground Upper Byte(I/O9~16) Lower Byte(I/O1~8) Connection
Control Logic
1~I/O16 Data Inputs/Outputs
SAMSUNG ELECTRONICS CO., LTD. reserves right change products specifications without notice.
-2Revision November 1998
K6F2016S4A Family
PRODUCT LIST
Industrial Temperature Products(-40~85°C) Part Name K6F2016S4A-ZI70 K6F2016S4A-ZI10 Function 48-CSP with ball, 70ns, 2.5V 48-CSP with ball, 100ns, 2.5V
CMOS SRAM
FUNCTIONAL DESCRIPTION
High-Z High-Z High-Z High-Z Dout High-Z Dout High-Z
I/O9~16 High-Z High-Z High-Z High-Z High-Z Dout Dout High-Z
Mode Deselected Deselected Output Disabled Output Disabled Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write
Power Standby Standby Active Active Active Active Active Active Active Active
means dont care. (Must high state)
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage relative Voltage supply relative Power Dissipation Storage temperature Operating Temperature Symbol VIN,VOUT TSTG Ratings -0.2 3.0V -0.2 3.6V Unit
Stresses greater than those listed under "Absolute Maximum Ratings" cause permanent damage device. Functional operation should restricted recommended operating condition. Exposure absolute maximum rating conditions extended periods affect reliability.
Revision November 1998
K6F2016S4A Family
RECOMMENDED OPERATING CONDITIONS1)
Item Supply voltage Ground Input high voltage Input voltage
Note TA=-40 85°C, otherwise specified Overshoot: Vcc+1.0V case pulse width 20ns. Undershoot: -1.0V case pulse width 20ns. Overshoot undershoot sampled, 100% tested.
CMOS SRAM
Symbol
-0.2
Vcc+0.22)
Unit
CAPACITANCE1) (f=1MHz, TA=25°C)
Item Input capacitance Input/Output capacitance
Capacitance sampled, 100% tested
Symbol
Test Condition VIN=0V VIO=0V
Unit
OPERATING CHARACTERISTICS
Item Input leakage current Output leakage current
Operating power supply current Symbol
Test Conditions VIN=Vss CS=VIH OE=VIH WE=VIL, VIO=Vss IIO=0mA, CS=VIL, VIN=VIH
Cycle time=1µs, 100% duty, IIO=0mA, CS0.2V, 0.2V VINVCC-0.2V Cycle time=Min, IIO=0mA, 100% duty, CS=VIL, VIN=VIH
Unit
ICC1 ICC2
Average operating current Output voltage Output high voltage Standby Current(TTL) Standby Current(CMOS)
ISB1
0.5mA -0.5mA CS=VIH LB=UB=VIH, Other inputs=VIH
CSVcc-0.2V LB=UBVcc-0.2V, CS0.2V, Other inputs=0~Vcc
Super power product=2µA with special handling
Revision November 1998
K6F2016S4A Family
OPERATING CONDITIONS
TEST CONDITIONS (Test Load Test Input/Output Reference)
Input pulse level 2.2V Input rising falling time Input output reference voltage 1.1V Output load (See right) :CL= 100pF+1TTL CL=30pF+1TTL VTM3)
CMOS SRAM
R12)
CL1)
R22)
Including scope capacitance =3070, =3150 V=2.3V
CHARACTERISTICS (TA=-40 85°C, Vcc=2.3~2.7V)
Speed Bins Parameter List Symbol Read cycle time Address access time Chip select output Output enable valid output Access Time Read Chip select low-Z output enable low-Z output Output enable low-Z output Chip disable high-Z output disable high-Z output Output disable high-Z output Output hold from address change Write cycle time Chip select write Address set-up time Address valid write Valid Write Write Write pulse width Write recovery time Write output high-Z Data write time overlap Data hold from write time write output low-Z tBLZ tOLZ tBHZ tOHZ tWHZ 70ns 100ns Units
DATA RETENTION CHARACTERISTICS
Item data retention Data retention current Data retention set-up time Recovery time Symbol tSDR tRDR Test Condition CSVcc-0.2V
Unit
Vcc= 1.5V, CSVcc-0.2V
data retention waveform
CSVcc-0.2V(CS controlled) LB=UBVcc-0.2V, CS0.2V(LB, controlled)
Super power product=1µA with special handling.
Revision November 1998
K6F2016S4A Family
TIMMING DIAGRAMS
TIMING WAVEFORM READ CYCLE(1)
Address Data Previous Data Valid
CMOS SRAM
(Address Controlled, CS=OE=VIL, WE=VIH, or/and LB=VIL)
Data Valid
TIMING WAVEFORM READ CYCLE(2)
(WE=VIH)
Address
tBHZ tOLZ tBLZ Data
High-Z
tOHZ Data Valid
NOTES (READ CYCLE) tOHZ defined time which outputs achieve open circuit conditions referenced output voltage levels. given temperature voltage condition, tHZ(Max.) less than tLZ(Min.) both given device from device device interconnection.
Revision November 1998
K6F2016S4A Family
TIMING WAVEFORM WRITE CYCLE(1) Controlled)
Address tCW(2) tWP(1) tAS(3) Data High-Z tWHZ Data Data Undefined Data Valid tWR(4)
CMOS SRAM
High-Z
TIMING WAVEFORM WRITE CYCLE(2) Controlled)
Address tAS(3) tWP(1) Data Data Valid tCW(2) tWR(4)
Data
High-Z
High-Z
Revision November 1998
K6F2016S4A Family
TIMING WAVEFORM WRITE CYCLE(3) (UB, Controlled)
Address tCW(2) tAS(3) tWP(1) Data Data Valid tWR(4)
CMOS SRAM
Data
NOTES (WRITE CYCLE)
High-Z
High-Z
write occurs during overlap(tWP) write begins when goes goes with asserting single byte operation simultaneously asserting double byte operation. write ends earliest transition when goes high goes high. measured from beginning write write. measured from going write. measured from address valid beginning write. measured from write address change. applied case write ends going high.
DATA RETENTION WAVE FORM
2.3V tSDR Data Retention Mode tRDR
2.0V CSVCC 0.2V LB=UBVcc-0.2V
LB/UB
Revision November 1998
K6F2016S4A Family
PACKAGE DIMENSIONS
BALL MICRO BGA(0.75mm ball pitch)
View Ball Bottom View
CMOS SRAM
Unit millimeter(inch) Ball
SRAM
Elastomer Side View Detail 0.25/Typ. Detail
0.68/Typ.
0.45/Typ.
Elastomer 0.3/Typ. Notes. Bump counts 48(8row 6column) Bump pitch (x,y)=(0.75 0.75)(typ.) tolerence +/-0.050 unless otherwise specified. Typical coplanarity 0.08(Max) Revision November 1998
5.90 7.90 0.30
0.75 6.00 3.75 8.00 5.25 0.35 0.93 0.68 0.25
6.10 8.10 0.40 0.94 0.08

CMOS SRAM 128K Super Power Voltage Full CMOS Static Revision

Top Searches for this datasheet

Other recent searches