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M5M5V208AKV/KR PRELIMINARY Notice: This final specification.
Top Searches for this datasheet29.Jan.'99 M5M5V208AKV/KR PRELIMINARY Notice: This final specification. Some parametric limits subject change 2097152-BIT (262144-WORD 8-BIT) CMOS STATIC DESCRIPTION M5M5V208A family voltage 2-Mbit static RAMs organized 262,144-words 8-bit, fabricated Mitsubishi's highperformance 0.25µm CMOS technology. M5M5V208A suitable memory applications where simple interfacing battery operating battery backup important design objectives. M5M5V208A packaged 32-pin 13.4mm STSOP packages. types STSOPs available, M5M5V208AKV (normal-lead-bend STSOP) M5M5V208AKR (reverse-lead-bend STSOP). These types STSOPs suitable surface mounting double-sided printed circuit boards. From point operating temperature, family divided into three versions; "Standard", "W-version", "I-version". Those summarized part name table below. FEATURES Single 3.6V power supply clocks, refresh inputs outputs compatible. Easy memory expansion power down Data retention supply voltage=2.0V Three-state outputs: OR-tie capability prevents data contention Common Data Battery backup capability Small stand-by current 0.3µA(typ.) PACKAGE M5M5V208AKV,KR 32pin 13.4 TSOP Stand-by current Icc(PD), Vcc=3.0V typical Ratings (max.) 25°C 40°C 25°C 40°C 70°C -85°C -Active current Icc1 (3.0V, typ.) PART NAME TABLE Version, Operating temperature Part name stands for"KV"or"KR") Power Supply Access time max. Standard +70°C W-version +85°C I-version +85°C M5M5V208A## -55L M5M5V208A## -70L M5M5V208A## -55H M5M5V208A## -70H M5M5V208A## -55LW M5M5V208A## -70LW M5M5V208A## -55HW M5M5V208A## -70HW M5M5V208A## -55LI M5M5V208A## -70LI M5M5V208A## -55HI M5M5V208A## -70HI 55ns 3.6V 70ns 3.6V 55ns 0.3µA 70ns 55ns 3.6V 70ns 55ns 3.6V 70ns 0.3µA 55ns 3.6V 70ns 55ns 3.6V 70ns 0.3µA 20µA 20mA (f=10MHz) 20µA 50µA (f=1MHz) 24µA 20µA 50µA 24µA "typical" parameter sampled, 100% tested. CONFIGURATION (TOP VIEW) M5M5V208AKV M5M5V208AKR Outline 32P3K-B(KV) Outline 32P3K-C(KR) MITSUBISHI ELECTRIC 29.Jan.'99 M5M5V208AKV/KR PRELIMINARY Notice: This final specification. Some parametric limits subject change 2097152-BIT (262144-WORD 8-BIT) CMOS STATIC FUNCTION operation mode M5M5V208A determined combination device control inputs Each mode summarized function table. write cycle executed whenever level overlaps with level high level address must before write cycle must stable during entire cycle. data latched into cell trailing edge whichever occurs first, requiring set-up hold time relative these edge maintained. output enable directly controls output stage. Setting high level,the output stage high-impedance state, data contention problem write cycle eliminated. read cycle executed setting high level level while active state When setting high level level, chips non-selectable mode which both reading writing disabled. this mode, output stage high-impedance state, allowing OR-tie with other chips memory expansion power supply current reduced stand-by current which specified Icc3 Icc4, memory data held power supply, enabling battery back-up operation during power failure power-down operation nonselected mode. FUNCTION TABLE Mode selection selection Write Read High-impedance High-impedance High-impedance Standby Standby Active Active Active BLOCK DIAGRAM 262144 WORDS BITS ROWS COLUMNS BLOCKS CLOCK GENERATOR (3V) (0V) *Pin numbers inside dotted line show reverse-lead-bend sTSOP. MITSUBISHI ELECTRIC 29.Jan.'99 M5M5V208AKV/KR PRELIMINARY Notice: This final specification. Some parametric limits subject change 2097152-BIT (262144-WORD 8-BIT) CMOS STATIC ABSOLUTE MAXIMUM RATINGS Symbol Parameter Supply voltage Topr Tstr Input voltage Output voltage Power dissipation Operating temperature Storage temperature Conditions With respect Ta=25°C Ratings 0.5*~4.6 0.5* (Max 4.6) Unit Standard Version Version 3.0V case Pulse width 30ns ~150 ELECTRICAL CHARACTERISTICS Symbol VOH1 VOH2 Icc1 Parameter High-level input voltage Low-level input voltage High-level output voltage High-level output voltage Low-level output voltage Input current Output current off-state Active supply current (CMOS-level Input) (Vcc= 3.6V, unless otherwise noted) Limits Test conditions IOH= 0.5mA IOH= 0.05mA IOL=2mA VI=0 S1=VIH S2=VIL OE=VIH VI/O=0 0.3* -0.5V +0.3V Unit 10MHz 5MHz 1MHz 10MHz 5MHz 1MHz 0.2V, Vcc-0.2V, other inputs 0.2V Vcc-0.2V,output-open S1=VIL,S2=VIH, other inputs=VIH output-open 0.2V, Icc2 Active supply current (TTL-level Input) Icc3 Stand-by current other inputs=0 Vcc-0.2V, Vcc-0.2V other inputs=0 ~+25°C ~+40°C ~+70°C ~+85°C Icc4 Stand-by current S1=VIH S2=VIL,other inputs=0 0.33 3.0V case Pulse width 30ns CAPACITANCE Symbol Parameter Input capacitance Output capacitance (Vcc= 3.6V, unless otherwise noted) Test conditions VI=GND, VI=25mVrms, f=1MHz VO=GND,VO=25mVrms, f=1MHz Limits Unit Note Direction current flowing into positive mark). Typical value 25°C MITSUBISHI ELECTRIC 29.Jan.'99 M5M5V208AKV/KR PRELIMINARY Notice: This final specification. Some parametric limits subject change 2097152-BIT (262144-WORD 8-BIT) CMOS STATIC ELECTRICAL CHARACTERISTICS MEASUREMENT CONDITIONS Input pulse level Input rise fall time Reference level Output loads Vcc= 3.6V, unless otherwise noted) 1TTL including scope Fig.1 Output load 3.6V VIH=2.2V,VIL=0.4V VOH=VOL=1.5V Fig.1,CL=30pF CL=5pF (for ten,tdis) Transition measured ±500mV from steady state voltage. (for ten,tdis) READ CYCLE Limits Symbol ta(A) ta(S1) ta(S2) ta(OE) tdis(S1) tdis(S2) tdis(OE) ten(S1) ten(S2) ten(OE) tV(A) Parameter Read cycle time Address access time Chip select access time Chip select access time Output enable access time Output disable time after high Output disable time after Output disable time after high Output enable time after Output enable time after high Output enable time after Data valid time after address -55L,H -70L,H Unit WRITE CYCLE Limits Symbol tw(W) tsu(A) tsu(A-WH) tsu(S1) tsu(S2) tsu(D) th(D) trec(W) tdis(W) tdis(OE) ten(W) ten(OE) Parameter Write cycle time Write pulse width Address setup time Address setup time with respect Chip select setup time Chip select setup time Data setup time Data hold time Write recovery time Output disable time from Output disable time from high Output enable time from high Output enable time from -55L,H -55L,H Unit MITSUBISHI ELECTRIC 29.Jan.'99 M5M5V208AKV/KR PRELIMINARY Notice: This final specification. Some parametric limits subject change 2097152-BIT (262144-WORD 8-BIT) CMOS STATIC TIMING DIAGRAMS Read cycle A0~17 ta(A) (S1) (Note tdis (S1) (Note (Note (S2) (OE) (OE) tdis (S2) (Note (Note tdis (OE) (S1) (S2) (Note DQ1~8 level DATA VALID Write cycle control mode) A0~17 (S1) (Note (Note (Note (S2) (Note (A-WH) tdis tdis (OE) DQ1~8 ten(OE) trec DATA STABLE MITSUBISHI ELECTRIC 29.Jan.'99 M5M5V208AKV/KR PRELIMINARY Notice: This final specification. Some parametric limits subject change 2097152-BIT (262144-WORD 8-BIT) CMOS STATIC Write cycle control mode) A0~17 (S1) trec (Note (Note (Note (Note (Note (Note DQ1~8 DATA STABLE Write cycle control mode) A0~17 (Note (Note (S2) trec (Note (Note (Note (Note DQ1~8 DATA STABLE Note Hatching indicates state "don't care". Writing executed while high overlaps low. When falling edge simultaneously prior falling edge rising edge outputs maintained high impedance state. Don't apply inverted phase signal externally when output mode. MITSUBISHI ELECTRIC 29.Jan.'99 M5M5V208AKV/KR PRELIMINARY Notice: This final specification. Some parametric limits subject change 2097152-BIT (262144-WORD 8-BIT) CMOS STATIC POWER DOWN CHARACTERISTICS ELECTRICAL CHARACTERISTICS Symbol (PD) (S1) (S2) Parameter Power down supply voltage Chip select input Chip select input Test conditions Limits Unit (PD) Vcc=3.0V 0.2V,other inputs=0 Power down supply current Vcc-0.2V,S2 Vcc-0.2V other inputs=0 ~+25°C ~+40°C ~+70°C ~+85°C TIMING REQUIREMENTS Symbol Parameter Power down time (PD) Power down recovery time trec (PD) Test conditions Limits Unit POWER DOWN CHARACTERISTICS control mode (PD) 2.2V 2.7V 2.7V (PD) 2.2V 0.2V control mode 0.2V 0.2V (PD) 2.7V 2.7V (PD) 0.2V MITSUBISHI ELECTRIC 29.Jan.'99 M5M5V208AKV/KR PRELIMINARY Notice: This final specification. Some parametric limits subject change 2097152-BIT (262144-WORD 8-BIT) CMOS STATIC Revision History Revision A0.1E A0.2E History first edition second edition Date 09.Nov.'98 29.Nov.'99 Preliminary Preliminary MITSUBISHI ELECTRIC Other recent searchesSML013WBDW1 - SML013WBDW1 SML013WBDW1 Datasheet M12L64322A - M12L64322A M12L64322A Datasheet LF198QMLMonolithic - LF198QMLMonolithic LF198QMLMonolithic Datasheet 2SB1067 - 2SB1067 2SB1067 Datasheet
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