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1997.11.20 Rev.F 4194304-BIT (4194304-WORD 1-BIT) CMOS STATIC
Top Searches for this datasheetM5M54R01J-12,-15 1997.11.20 Rev.F 4194304-BIT (4194304-WORD 1-BIT) CMOS STATIC DESCRIPTION M5M54R01J family 4194304-word 1-bit static RAMs, fabricated with high performance CMOS silicon gate process designed high speed application. M5M54R01J offered 32-pin plastic small outline Jlead package(SOJ). These device operate single supply, directly compatible. They include power down feature well. address inputs chip select input CONFIGURATION (TOP VIEW) FEATURES Fast access time M5M54R01J-12 12ns(max) M5M54R01J-15 15ns(max) power dissipation Active 450mW(typ) Stand 5mW(typ) Single power supply Fully static operation clocks, refresh Test mode available Easy memory expansion Three-state outputs OR-tie capability prevents data contention Directly compatible inputs outputs (5V) (0V) data inputs write control input address inputs address inputs output enable input (0V) (5V) data outputs address inputs B1/B4 byte control input M5M54R01J Outline 32P0K(SOJ) APPLICATION High-speed memory units PACKAGE 32pin 400mil BLOCK DIAGRAM address inputs INPUT BUFFERS MEMORY ARRAY ROWS 8192 COLUMNS OUTPUT BUFFERS ADDRESS DECODERS outputs data COLUMN CIRCUITS COLUMN ADDRESS COLUMN ADDRESS DECODERS DECODERS COLUMN INPUT BUFFERS DATA INPUT BUFFERS inputs/ (5V) data B1/B4 address inputs (0V) MITSUBISHI ELECTRIC M5M54R01J-12,-15 4194304-BIT (4194304-WORD 1-BIT) CMOS STATIC FUNCTION operation mode M5M54R01J determined combination device control inputs Each mode summarized function table. write cycle executed whenever level overlaps with level address must set-up before write cycle must stable during entire cycle. data latched into cell trailing edge whichever occurs first, requiring set-up hold time relative these edge maintained. output enable input directly controls output stage. Setting high level, output stage high impedance state, data contention problem write cycle eliminated. read cycle excuted setting high level level while active state (S=L). When setting high level, chip non-selectable mode which both reading writing disable. this mode, output stage high-impedance state, allowing OR-tie with other chips memory expansion Signal-S controls power-down feature. When goes high, power dissapation reduced extremely. access time from equivalent address access time. works with organization 4194304-word bit,when B1/B4 floating. organization 1048 576-word 4bit also obtained reducing test time, when B1/B4 high. FUNCTION TABLE Mode selection Write Read High-impedance High-impedance High-impedance High-impedance High-impedance Dout High-impedance Stand Active Active Active ABSOLUTE MAXIMUM RATINGS Symbol Parameter Supply voltage Input voltage Output voltage Power dissipation Operating temperature Ta=25 With respect Conditions Ratings -3.5 -3.5 VCC+0.3 -3.5 VCC+0.3 1000 Unit Tstg(bias) Storage temperature (bias) Storage temperature *Pulse width 20ns, case DC:-0.5V ELECTRICAL CHARACTERISTICS Symbol Parameter High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage Input current (Ta=0 Vcc=5V±10% unless otherwise noted) Condition Limits -0.3 Vcc+0.3 12ns cycle 12ns cycle 15ns cycle 15ns cycle Unit =-4mA IOL= 0~Vcc (S)= Output current off-state 0~Vcc Active supply current (TTL level) (S)= other inputs Output-open(duty 100%) Stand current (TTL level) (S)= (S)= Vcc0.2V other inputs I0.2V VIVcc-0.2V Stand current MITSUBISHI ELECTRIC M5M54R01J-12,-15 4194304-BIT (4194304-WORD 1-BIT) CMOS STATIC CAPACITANCE (Ta=0 Vcc=5V±10% unless otherwise noted) Symbol Parameter Input capacitance Output capacitance Test Condition =GND, =25mVrms,f=1MHz O=GND, O=25mVrms,f=1MHz Limit Unit Note Direction current flowing into positive mark). Typical value Vcc=5V,Ta=25 CI,CO periodically sampled 100% tested. ELECTRICAL CHARACTERISTICS (1)MEASUREMENT CONDITION (Ta=0 Vcc=5V±10% unless otherwise noted) Input pulse levels =3.0V, =0.0V Input rise fall time Input timing reference levels IH=1.5V, IL=1.5V Output timing reference levels OH=1.5V, =1.5V Output loads Fig1 ,Fig2 OUTPUT Z0=50 RL=50 VL=1.5V (including scope JIG) Fig.1 Output load Fig.2 Output load MITSUBISHI ELECTRIC M5M54R01J-12,-15 4194304-BIT (4194304-WORD 1-BIT) CMOS STATIC (2)READ CYCLE Limits Symbol Parameter M5M54R01J M5M54R01J Unit ta(S) (OE) tdis tdis (OE) (OE) tv(A) Read cycle time Address access time Chip select access time Output enable access time Output disable time after high Output disable time after high Output enable time after Output enable time after Data valid time after address change Power-up time after chip selection Power-down time after chip selection (3)WRITE CYCLE Limits Symbol Parameter M5M54R01J M5M54R01J Unit tw(W) (A)1 (A)2 tsu(S) trec(W) tdis tdis (OE) Write cycle time Write pulse width Address setup time(W) Address setup time(S) Chip select setup time Data setup time Data hold time Write recovery time Output disable time after Output disable time after high Output enable time after high Output enable time after Address High ten(OE) tsu(A-WH) MITSUBISHI ELECTRIC M5M54R01J-12,-15 4194304-BIT (4194304-WORD 1-BIT) CMOS STATIC (4)TIMING DIAGRAMS Read cycle 0~21 UNKNOWN DATA VALID PREVIOUS DATA VALID OE=L Read cycle (Note ta(S) (Note tdis (Note UNKNOWN DATA VALID ICC1 ICC2 OE=L Note Addresses valid prior coincident with transition low. Transition measured ±500mv from steady state voltage with specified loading Figure Read cycle (Note (OE) (Note tdis (OE) (Note (OE) UNKNOWN DATA VALID Note Addresses valid prior transition (ta(A)-ta(OE)), (ta(S)-ta(OE)) MITSUBISHI ELECTRIC M5M54R01J-12,-15 4194304-BIT (4194304-WORD 1-BIT) CMOS STATIC Write cycle control mode 0~21 (Note7) (Note7) (A-WH) trec th(D) DATA STABLE tdis(W) (Note tdis(OE) (OE) (Note Hi-Z Write cycle control mode 0~21 trec tw(W) (Note7) (Note7) DATA STABLE tdis (Note5) (Note5) Hi-Z (Note8) Note Hatching indicates state don't care. When falling edge simultaneous prior falling edge output maintained high impedance. en,tdis periodically sampled 100% tested. 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