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M3D088 PDTC114YT resistor-equipped transistor Product specif


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book, halfpage
M3D088
PDTC114YT resistor-equipped transistor
Product specification Supersedes data 1998 1999
Philips Semiconductors
Product specification
resistor-equipped transistor
FEATURES Built-in bias resistors (typ. respectively) Simplification circuit design Reduces number components board space. APPLICATIONS Especially suitable space reduction interface driver circuits Inverter circuit configurations without external resistors. DESCRIPTION resistor-equipped transistor SOT23 plastic package. PINNING MARKING TYPE NUMBER PDTC114YT Note Made Hong Kong. Made Malaysia. MARKING CODE(1)
MGA893
columns
PDTC114YT
MAM097
view
Fig.1 Simplified outline (SOT23) symbol.
DESCRIPTION base/input emitter/ground collector/output
Fig.2 Equivalent inverter symbol.
1999
Philips Semiconductors
Product specification
resistor-equipped transistor
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative Ptot Tstg Tamb Note Transistor mounted printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Note Transistor mounted printed-circuit board. CHARACTERISTICS Tamb unless otherwise specified. SYMBOL ICBO ICEO IEBO VCEsat Vi(off) Vi(on) PARAMETER collector cut-off current collector cut-off current emitter cut-off current current gain collector-emitter saturation voltage input-off voltage input-on voltage input resistor resistor ratio collector capacitance CONDITIONS 0.25 MIN. PARAMETER thermal resistance from junction ambient CONDITIONS note VALUE output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb note CONDITIONS open emitter open base open collector MIN.
PDTC114YT
MAX. +150 +150
UNIT
UNIT
TYP.
MAX.
UNIT
1999
Philips Semiconductors
Product specification
resistor-equipped transistor
PDTC114YT
handbook, halfpage
MGM904
handbook, halfpage
MGM903
VCEsat
(mV)
10-1
(mA)
10-1
(mA)
Tamb Tamb Tamb
IC/IB Tamb Tamb Tamb
Fig.3
current gain function collector current; typical values.
Fig.4
Collector-emitter saturation voltage function collector current; typical values.
handbook, halfpage
MGM906
handbook, halfpage Vi(on)
MGM905
Vi(off)
10-1 10-2
10-1
(mA)
10-1 10-1
(mA)
Tamb Tamb Tamb
Tamb Tamb Tamb
Fig.5
Input-off voltage function collector current; typical values.
Fig.6
Input-on voltage function collector current; typical values.
1999
Philips Semiconductors
Product specification
resistor-equipped transistor
PACKAGE OUTLINE Plastic surface mounted package; leads
PDTC114YT
SOT23
detail
scale
DIMENSIONS original dimensions) UNIT max. 0.48 0.38 0.15 0.09 0.95 0.45 0.15 0.55 0.45
OUTLINE VERSION SOT23
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999
Philips Semiconductors
Product specification
resistor-equipped transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
PDTC114YT
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1999
Philips Semiconductors
Product specification
resistor-equipped transistor
NOTES
PDTC114YT
1999
Philips Semiconductors worldwide company
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other countries apply Philips Semiconductors, International Marketing Sales Communications, Building BE-p, P.O. 218, 5600 EINDHOVEN, Netherlands, Fax. 24825 Philips Electronics N.V. 1999
Internet:
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
115002/00/03/pp8
Date release: 1999
Document order number:
9397 05857

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