20V/6A, RDS(ON) =20m(typ.) =4.5V RDS(ON) =25m(typ.) =2.5V Descrip

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20V/6A, RDS(ON) =20m(typ.) =4.5V RDS(ON) =25m(typ.) =2.5V Descrip

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APM9966CO
20V/6A, RDS(ON) =20m(typ.) =4.5V RDS(ON) =25m(typ.) =2.5V
Description
Super High Dense Cell Design Reliable Rugged Lead Free Available (RoHS Compliant) View TSSOP
Applications
Power Management Notebook Computer, Portable Equipment Battery Powered Systems.
N-Channel MOSFET
Ordering Marking Information
9966C Lead Free Code Handling Code Range Package Code Package Code TSSO Operating Junction Range 150°C Handling Code Tube Tape Reel Lead Free Code Lead Free Device Blank riginal Device XXXXX Date Code
9966C
9966C XXXXX
Note: ANPEC lead-free products contain molding compounds/die attach materials 100% matte plate termination finish; which fully compliant with RoHS compatible with both SnPb lead-free soldiering operations. ANPEC lead-free products meet exceed lead-free requirements IPC/JEDEC STD-020C classification lead-free peak reflow temperature.
ANPEC reserves right make changes improve reliability manufacturability without notice, advise customers obtain latest version relevant information verify before placing orders. Copyright ANPEC Electronics Corp. Rev. Mar., 2005 www.anpec.com.tw
APM9966CO
Absolute Maximum Ratings
Symbol VDSS VGSS IDM* TSTG RJA*
Note: *Surface Mounted area, 10sec.
25°C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction Ambient TA=25°C TA=100°C VGS=4.5V
Rating 1.25
Unit °C/W
Electrical Characteristics
Symbol Parameter
25°C unless otherwise noted)
Test Condition
APM9966CO Min. Typ. Max.
Unit
Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON)
VGS=0V, IDS=250µA VDS=16V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±10V, VDS=0V VGS=4.5V, IDS=6A VGS=2.5V, IDS=5.2A ISD=1.7A, VGS=0V
0.45 ±100
Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage
Gate Charge Characteristics Total Gate Charge Gate-Drain Charge
21.7 VDS=10V, VGS=4.5V, IDS=6A
Gate-Source Charge
Copyright ANPEC Electronics Corp. Rev. Mar., 2005
www.anpec.com.tw
APM9966CO
Electrical Characteristics (Cont.)
Symbol Parameter
25°C unless otherwise noted)
Test Condition
APM9966CO Min. Typ. Max.
Unit
Dynamic Characteristics Ciss Coss Crss td(ON) td(OFF)
Notes:
Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz
VDD=10V, RL=10, IDS=1A, VGEN=4.5V, RG=6
Pulse test pulse width300µs, duty cycle2%. Guaranteed design, subject production testing.
Copyright ANPEC Electronics Corp. Rev. Mar., 2005
www.anpec.com.tw
APM9966CO
Typical Characteristics
Power Dissipation
Drain Current
Drain Current
Ptot Power
TA=25
TA=25 C,VG=4.5V
Junction Temperature (°C)
Junction Temperature (°C)
Safe Operation Area
Normalized Transient Thermal Resistance
Thermal Transient Impedance
Duty
Drain Current
300µs
0.05 0.02 0.01
10ms
100ms
0.01
Single Pulse
0.01 0.01
TA=25
1E-3 1E-4
Mounted
1E-3
0.01
Drain Source Voltage
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. Mar., 2005
www.anpec.com.tw
APM9966CO
Typical Characteristics (Cont.)
Output Characteristics
VGS= 2,3,4,5,6,7,8,9,10V
Drain-Source Resistance
RDS(ON) Resistance
VGS=4.5V VGS=2.5V
Drain Current
1.5V
Drain-Source Voltage
Drain Current
Transfer Characteristics
Gate Threshold Voltage
IDS= 250µA
Tj=125
Tj=25
Tj=-55
Normalized Threshold Voltage
Drain Current
Gate Source Voltage
Junction Temperature (°C)
Copyright ANPEC Electronics Corp. Rev. Mar., 2005
www.anpec.com.tw
APM9966CO
Typical Characteristics (Cont.)
Drain-Source Resistance
VGS= 4.5V Tj=150
Source-Drain Diode Forward
Normalized Resistance
Source Current
Tj=25
RON@Tj=25
Junction Temperature (°C)
Source Drain Voltage
Capacitance
1200 Frequency=1MHz
Gate Charge
VDS=10V ID=6A
Gate source Voltage
1000
Capacitance (pF)
Ciss
Coss Crss
Drain Source Voltage
Gate Charge (nC)
Copyright ANPEC Electronics Corp. Rev. Mar., 2005
www.anpec.com.tw
APM9966CO
Packaging Information
TSSOP-8
GAUGE PLANE
0.25
(L1)
Millimeters Min. 0.00 0.80 0.19 0.65 6.40 4.30 0.45 0.09 0.09 0.004 0.004 0.008 4.50 0.75 0.169 0.018 Max. 0.15 1.05 0.30 Min. 0.000 0.031 0.007 0.114
Inches Max. 0.047 0.006 0.041 0.012 0.122 0.026 0.252 0.177 0.030 0.039REF
Copyright ANPEC Electronics Corp. Rev. Mar., 2005
www.anpec.com.tw
APM9966CO
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material 90/10 63/37 SnPb), 100%Sn Meets Specification RSI86-91, ANSI/J-STD-002 Category
Reflow Condition
(IR/Convection Reflow)
p-up
ritical Zone
p-down Preheat
Peak
Classification Reflow Profiles
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Time maintained above: Temperature (TL) Time (tL) Peak/Classificatioon Temperature (Tp) Time within actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds table 10-30 seconds Pb-Free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds table 20-40 seconds
6°C/second max. 6°C/second max. minutes max. minutes max. Time 25°C Peak Temperature Notes: temperatures refer topside package .Measured body surface.
Copyright ANPEC Electronics Corp. Rev. Mar., 2005 www.anpec.com.tw
APM9966CO
Classification Reflow Profiles(Cont.)
Table SnPb Entectic Process Package Peak Reflow peratures Package Thickness Volum Volum <350 <2.5 +0/-5°C +0/-5°C +0/-5°C +0/-5°C Table Pb-free Process Package Classification Reflow peratures Package Thickness Volum Volum Volum <350 350-2000 >2000 <1.6 +0°C* +0°C* +0°C* +0°C* +0°C* +0°C* +0°C* +0°C* +0°C* *Tolerance: device anufacturer/supplier shall assure process patibility including stated classification perature (this eans Peak reflow perature +0°C. exam 260°C+0°C) rated level.
Reliability Test Program
Test item SOLDERABILITY HOLT Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 1000 Bias 125°C Hrs, 100% 121°C -65°C 150°C, Cycles
Carrier Tape Reel Dimensions
Copyright ANPEC Electronics Corp. Rev. Mar., 2005
www.anpec.com.tw
APM9966CO
Carrier Tape Reel Dimensions(Cont.)
Application
+1.5
12.75+ 0.15
12.4
1.75±0.1
TSSOP-8
0.3±0.013
(mm)
Cover Tape Dimensions
Application TSSOP- Carrier Width Cover Tape Width Devices Reel 2500
Customer Service
Anpec Electronics Corp. Head Office Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. 886-3-5642000 886-3-5642050 Taipei Branch 137, Lane 235, Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, 886-2-89191368 886-2-89191369
Copyright ANPEC Electronics Corp. Rev. Mar., 2005
www.anpec.com.tw

20V/6A, RDS(ON) =20m(typ.) =4.5V RDS(ON) =25m(typ.) =2.5V Descrip

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