HSB1386A FREQUENCY TRANSISTOR (-20V, -4A) Features VCE(

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HSB1386A FREQUENCY TRANSISTOR (-20V, -4A) Features VCE(

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Spec. HA200111 Issued Date 2001.12.01 Revised Date 2005.02.14 Page
HSB1386A
FREQUENCY TRANSISTOR (-20V, -4A)
Features
VCE(sat). VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A) Excellent current gain characteristics. TO-92
Structure
Epitaxial planar type silicon transistor
Absolute Maximum Ratings (TA=25°C)
Symbol VCBO VCEO VEBO Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25oC) Junction Temperature Storage Temperature Limits -55~+150 Unit A(Pulse)*
Electrical Characteristics (TA=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter reakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Current Transfer Ratio Transition Frequency Output Capacitance Min. -0.5 -0.5 Typ. Max. Unit IC=-1mA IC=-50uA VCB=-20V VEB=-5V IC/IB=-4A/-0.1A VCE=-2V, IC=-0.5A VCE=-6V, IE=50mA, f=30MHz VCB=-20V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Test Conditions IC=-50uA
Classification
Rank Range 82-180 120-270 180-390 370-580
HSB1386A
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000 1000
Spec. HA200111 Issued Date 2001.12.01 Revised Date 2005.02.14 Page
Saturation Voltage Collector Current
Saturation Voltage (mV)
VCE(sat) IC=20IB
VCE=2V
VCE(sat) IC=40IB
1000 10000
1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
10000 1000
Capacitance Reverse-Biased Voltage
Saturation Voltage (mV)
1000
Capacitance (pF)
VBE(sat) IC=20IB
1000 10000
Collector Current-IC (mA)
Reverse Biased Voltage
Power Derating
PD(mW) Power Dissipation
Ambient Temperature
HSB1386A
HSMC Product Specification
TO-92 Dimension
Spec. HA200111 Issued Date 2001.12.01 Revised Date 2005.02.14 Page
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Control Code
Date Code
Note: Green label used pb-free packing
Style: 1.Emitter 2.Collector 3.Base Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 4.33 4.33 12.70 0.36 3.36 0.36
Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27
Typical, Unit:
3-Lead TO-92 Plastic Package HSMC Package Code:
TO-92 Taping Dimension
F1,F2 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00
Unit:
F1F2
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSB1386A HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HA200111 Issued Date 2001.12.01 Revised Date 2005.02.14 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 100oC 150oC 60~120 <3oC/sec 183oC 60~150 +0/-5 10~30 <6oC/sec minutes
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 <3oC/sec 217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature
Dipping time 5sec ±1sec 5sec ±1sec
+0/-5
HSB1386A
HSMC Product Specification

HSB1386A FREQUENCY TRANSISTOR (-20V, -4A) Features VCE(

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