GND2 OUT2 AMP2 AMP1 ENABLE GND1 OUT1
|
|
|
Top Searches for this datasheet
GND2
OUT2
AMP2
AMP1
ENABLE
GND1
OUT1
SA5200 dual gain-stage
Product Specification Replaces data 1991 IC17 Data Handbook 1997
Philips Semiconductors
Philips Semiconductors
Product specification
dual gain-stage
SA5200
DESCRIPTION
SA5200 dual amplifier with 1200MHz response. noise 3.6dB) makes this part ideal front-ends, simple power-down mode saves current battery operated equipment. Inputs outputs matched enable allows designer ability turn amplifiers off, allowing part amplifier well attenuator. This very useful front-end buffering receiver applications.
CONFIGURATION
Package
OUT1 GND1 ENABLE
OUT2
GND2
FEATURES
Dual amplifiers 1200MHz operation power consumption (4.2mA amplifier Power-Down Mode (ICC 95µA typical) 3.6dB noise figure 900MHz Unconditionally stable Fully protected cost
ORDERING INFORMATION
DESCRIPTION 8-Pin Plastic Small Outline (Surface-mount)
SR00166
Supply voltage 4-9V Gain 1GHz Input output match S11, typically <-14dB
APPLICATIONS
Figure Configuration
Cellular radios strips Portable equipment
TEMPERATURE RANGE -40-+85°C ORDER CODE SA5200D SOT96-1
BLOCK DIAGRAM
GND2 OUT2
AMP2
AMP1
ENABLE
GND1
OUT1
SR00167
Figure Block Diagram
RECOMMENDED OPERATING CONDITIONS
SYMBOL Supply voltage Operating ambient temperature range Grade Operating junction temperature Grade PARAMETER RATING +105 UNITS
1997
853-1578 18662
Philips Semiconductors
Product specification
dual gain-stage
SA5200
ABSOLUTE MAXIMUM RATINGS
SYMBOL TJMAX PMAX TSTG Supply voltage1 PARAMETER RATING -0.5 +150 UNITS
Power dissipation, 25°C (still air)2 8-Pin Plastic Maximum operating junction temperature Maximum power input/output Storage temperature range
NOTE: Transients exceeding 10.5V damage product. Maximum dissipation determined operating ambient temperature thermal resistance, 8-Pin 158°C/W
ELECTRICAL CHARACTERISTICS
+5V, 25°C; unless otherwise stated. SYMBOL Supply voltage ENABLE High Total supply current ENABLE ENABLE High ENABLE VIDC,ODC TTL/CMOS logic threshold voltage1 Logic level Logic level Enable input current Enable input current Input output levels Power-up mode Power-down mode Enable 0.4V Enable 2.4V -0.3 0.83 PARAMETER TEST CONDITIONS LIMITS 17.8 1.25 10.4 22.2 UNITS
NOTE: ENABLE input must connected valid logic level proper operation SA5200.
+5V, 25°C, either amplifier, enable unless otherwise stated. SYMBOL ISOL POUT Insertion gain Output return loss Reverse isolation Input return loss Output compression point Noise figure Input second-order intercept point Input third-order intercept point Amplifier-to-amplifier isolation2 Saturated output power Insertion gain when disabled PARAMETER TEST CONDITIONS 100MHz 900MHz 900MHz 900MHz 900MHz 900MHz 900MHz 900MHz 900MHz 900MHz 900MHz 100MHz 900MHz LIMITS -14.3 -17.9 -16.5 -4.3 +4.3 -1.8 -1.7 -13.5 13.2 UNITS
ELECTRICAL CHARACTERISTICS1
NOTE: measurements include effects SA5200 Evaluation Board (see Figure Measurement system impedance Input applied amplifier, output taken other output. ports terminated into
1997
Philips Semiconductors
Product specification
dual gain-stage
SA5200
APPLICATIONS
SA5200 user-friendly, wide-band, unconditionally stable, power dual gain amplifier circuit. There several advantages using SA5200 high frequency gain block instead discrete implementation. First simplicity use. SA5200 does need external biasing components. higher level integration small footprint (SO8) package occupies less space printed circuit board reduces manufacturing cost system. Also higher level integration improves reliability amplifier over discrete implementation with several components. power down mode SA5200 helps reduce power consumption applications where amplifiers disabled. last least impedance matching inputs outputs. Only those have toiled through discrete transistor implementations input output impedance matching truly appreciate elegance simplicity SA5200 input output impedance matching simplified equivalent schematic shown Each amplifier composed transistor with 13GHz classical series-shunt feedback configuration. wideband amplifiers biased from same bias generator. normal operation each amplifier consumes about quiescent current 5V). disable mode device consumes about 90µA current, most enable buffer bias generator. input impedance amplifiers amplifiers have typical gain 11dB 100MHz gain 1.2GHz. seen from that inductance between ground plane will reduce gain amplifiers higher frequencies. Thus proper grounding Pins essential maximum gain increased frequency response. shows printed circuit board layout component placement SA5200 evaluation board. coupling capacitors should selected such that they shorts desired frequency operation. Since most low-cost large value surface mount capacitors cease simply capacitors range exhibit inductive behavior, recommended that high frequency chip capacitors utilized circuit. good power supply bypass also essential performance amplifier should close device practical. shows typical frequency response channels SA5200. frequency gain about 11dB 100MHz slowly drops 10dB 500MHz. gain about 900MHz which typical SA5200 with good printed circuit board layout. also seen that both channels have very well matched frequency response matched gain within 0.1dB 100MHz 0.2dB 900MHz.
SA5200 finds applications many areas communications. ideal gain block high performance, cost, power communications transceivers. typical radio transceiver front-end shown This could front-end cellular phone, VHF/ hand-held transceiver, cordless telephone spread spectrum system. SA5200 used receiver path most systems pre-amplifier. bandpass filter between amplifiers also minimize noise into first mixer. transmitter path, SA5200 used buffer isolate from load variations power level changes power amplifier. This improves stability VCOs. SA5200 also used pre-driver power amplifier modules. amplifiers SA5200 easily cascaded have 13dB gain block 900MHz. 100MHz gain will 22dB noise figure about 5.5dB. SA5200 operated higher voltage much improved output compression point higher order intercept point. Several stages SA5200 also cascaded used amplifier strip DBS/TV/GPS receivers. shows 60dB gain strip 180MHz. noise figure cascaded amplifier chain given equation (total) NF2/G1 NF3/G1*G2 NF4/G1*G2*G3 (Equation. NOTE: noise figure gain should above equation. Since noise figure each stage about 3.6dB gain about 11dB, noise figure 60dB gain strip will about 6.4dB. applications where single amplifier required with 7.5dB gain 900MHz current consumption paramount importance (battery powered receivers), amplifier used amplifier disabled leaving GND2 (Pin unconnected. This will reduce total current consumption meager 4mA. ENABLE useful Time-Division-Duplex systems where receiver disabled period time. this case overall system supply current will decreased 8mA. ENABLE also used improve system dynamic range. input levels that extremely high, SA5200 disabled. this case input signal attenuated 13dB. This prevents system from being overloaded well improves system's overall dynamic range. disabled condition SA5200 increases nearly +20dBm.
1997
Philips Semiconductors
Product specification
dual gain-stage
SA5200
GND1
ENABLE
BIAS GENERATOR
OUT1
OUT2
AMP1 GND1 AMP2
GND2
SR00168
Figure Simplified Equivalent Schematic SA5200
SR00169
Figure Printed Circuit Board Layout SA5200 Evaluation Board
1997
Philips Semiconductors
Product specification
dual gain-stage
SA5200
SR00170
Figure Typical Frequency Response SA5200 System
FILTER
ANTENNA NE5200 ENABLE
DUPLEX FILTER NE602A
NE5200 POWER FILTER ENABLE MODULATION
SR00171
Figure Typical Radio Transceiver Front-End 1997
Philips Semiconductors
Product specification
dual gain-stage
SA5200
NE5200
NE5200
NE5200
SR00172
Figure 60dB Gain Block 100-300MHz GPS/DBS Systems
(mA) +85°C -40°C (dB)
+25°C FREQUENCY (MHz) 1000 2000
SR00173
SR00174
Figure Supply Current Supply Voltage Temperature
Figure Input Match Frequency
+85°C
+25°C +25°C -40°C FREQUENCY (MHz) 1000 2000 (dB) +85°C -40°C
SR00175
SR00176
Figure Disabled Supply Current Temperature
Figure Input Match Frequency Temperature
1997
Philips Semiconductors
Product specification
dual gain-stage
SA5200
-40°C +25°C +85°C
(dB) (dB) +25°C FREQUENCY (MHz) 1000 2000 FREQUENCY (MHz) 1000 2000
SR00177
SR00180
Figure Insertion Gain Frequency
Figure Insertion Gain Frequency Temperature
-40°C (dB) +25°C +85°C
(dB)
+25°C 1000 1050 1100 1150 1200 1000 1050 1100 1150 1200
FREQUENCY (MHz)
SR00178
FREQUENCY (MHz)
SR00179
Figure Insertion Gain Frequency Expanded Detail
Figure Insertion Gain Frequency Temperature Expanded Detail
1997
Philips Semiconductors
Product specification
dual gain-stage
SA5200
(dB) FREQUENCY (MHz) 1000 2000 +25°C (dB)
+25°C
FREQUENCY (MHz) 1000 2000
SR00181
SR00182
Figure Insertion Gain Matching (CH1 CH2) Frequency
Figure Output Match Frequency
+85°C
+25°C
(dB) (dB)
-40°C
+85°C
+25°C -40°C
FREQUENCY (MHz) 1000 2000
FREQUENCY (MHz) 1000 2000
SR00183
SR00184
Figure Reverse Insertion Gain Frequency Temperature
Figure Output Match Frequency Temperature
1997
Philips Semiconductors
Product specification
dual gain-stage
SA5200
(dB) (dB)
ENABLED
DISABLED
+25°C FREQUENCY (MHz) 1000 2000
+25°C -100 FREQUENCY (MHz) 1000 2000
Figure S-parameters Frequency Disabled Amplifier
Figure Input Output Isolation Frequency
(dB) (dB) +25°C
+25°C FREQUENCY (MHz) 1000 2000 FREQUENCY (MHz) 1000 2000
Figure Insertion Gain Matching Disabled (CH1 CH2) Frequency
Figure Noise Figure Frequency System
1997
5-10
Philips Semiconductors
Product specification
dual gain-stage
SA5200
+25°C
100MHz 500MHz
(dBm) (dBm) 900MHz
DISABLED
FREQUENCY (MHz) 1000 2000 +25°C
SR00185
SR00186
Figure Output Compression Point Frequency
Figure Third-Order Output Intercept Frequency
DISABLED
PSAT (dBm)
(dBm) 900MHz +25°C +25°C FREQUENCY (MHz) 1000 2000
SR00187
SR00188
Figure Saturated Output Power Frequency
Figure Third-Order Input Intercept Frequency
1997
5-11
Philips Semiconductors
Product specification
dual gain-stage
SA5200
DISABLED
900MHz
(dBm) DISABLED 500MHz
(dBm)
100MHz +25°C
+25°C 900MHz
SR00191
SR00190
Figure Second-Order Output Intercept Frequency
Figure Second-Order Input Intercept Frequency
ENABLE
ENABLE ENABLE
SR00189
SR00192
Figure Switching Speed; 10MHz -26dBm, Coupling Capacitors 0.01µF
Figure Switching Speed; 50MHz -26dBm, Coupling Capacitors 100pF
1997
5-12
Philips Semiconductors
Product specification
dual gain-stage
SA5200
SO8: plastic small outline package; leads; body width 3.9mm
SOT96-1
1997
Philips Semiconductors
Product specification
dual gain-stage
SA5200
DEFINITIONS
Data Sheet Identification
Objective Specification
Product Status
Formative Design
Definition
This data sheet contains design target goal specifications product development. Specifications change manner without notice. This data sheet contains preliminary data, supplementary data will published later date. Philips Semiconductors reserves right make changes time without notice order improve design supply best possible product. This data sheet contains Final Specifications. Philips Semiconductors reserves right make changes time without notice, order improve design supply best possible product.
Preliminary Specification
Preproduction Product
Product Specification
Full Production
Philips Semiconductors Philips Electronics North America Corporation reserve right make changes, without notice, products, including circuits, standard cells, and/or software, described contained herein order improve design and/or performance. Philips Semiconductors assumes responsibility liability these products, conveys license title under patent, copyright, mask work right these products, makes representations warranties that these products free from patent, copyright, mask work right infringement, unless otherwise specified. Applications that described herein these products illustrative purposes only. Philips Semiconductors makes representation warranty that such applications will suitable specified without further testing modification. LIFE SUPPORT APPLICATIONS Philips Semiconductors Philips Electronics North America Corporation Products designed life support appliances, devices, systems where malfunction Philips Semiconductors Philips Electronics North America Corporation Product reasonably expected result personal injury. Philips Semiconductors Philips Electronics North America Corporation customers using selling Philips Semiconductors Philips Electronics North America Corporation Products such applications their risk agree fully indemnify Philips Semiconductors Philips Electronics North America Corporation damages resulting from such improper sale. Philips Semiconductors East Arques Avenue P.O. 3409 Sunnyvale, California 94088-3409 Telephone 800-234-7381 Philips Semiconductors Philips Electronics North America Corporation register eligible circuits under Semiconductor Chip Protection Act. Copyright Philips Electronics North America Corporation 1993 rights reserved. Printed U.S.A.
1997
Other recent searches
ZX95-3050A+ - ZX95-3050A+ ZX95-3050A+ Datasheet
PCF8534A - PCF8534A PCF8534A Datasheet
P89LPC9103 - P89LPC9103 P89LPC9103 Datasheet
DSW1054-A - DSW1054-A DSW1054-A Datasheet
PCS1900 - PCS1900 PCS1900 Datasheet
DCS1800 - DCS1800 DCS1800 Datasheet
CX-30 - CX-30 CX-30 Datasheet
CS5203-3 - CS5203-3 CS5203-3 Datasheet
2SB1073G - 2SB1073G 2SB1073G Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
