Stacked (Multi-Chip Package) FLASH MEMORY FCRAM FLASH MEMORY SRAM

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Stacked (Multi-Chip Package) FLASH MEMORY FCRAM FLASH MEMORY SRAM

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SMCP0.3E
Stacked (Multi-Chip Package) FLASH MEMORY FCRAM
FLASH MEMORY SRAM Interface FCRAMMB84VD23483EJ-90
FEATURES
Power supply voltage 3.1V High performance maximum access time (Flash) maximum access time (FCRAM) Operating Temperature Package 81-ball
(Continued)
PRODUCT LINEUP
Flash Memory Ordering Part VCCf, VCCr
+0.1V -0.3
FCRAM
(Note
MB84VD23483EJ-90
Max. Address Access Time (ns) Max. Access Time (ns) Max. Access Time (ns)
Notes: Both VCCf VCCr must same level when either part being accessed.
PACKAGE
81-pin plastic FBGA
BGA-81P-M03
MB84VD23483EJ-90
(Continued)
FLASH MEMORY Simultaneous Read/Write operations (Dual bank) FlexBankBank Mbit Bank Mbit Bank Mbit
Bank Mbit virtual Banks chosen from combination four physical banks Host system program erase bank, then read immediately simultaneously read from other bank between read write operations Read-while-erase Read-while-program Minimum 100,000 write/erase cycles Sector erase architecture Sixteen words hundred twenty-six word. combination sectors concurrently erased. Also supports full chip erase. Embedded EraseAlgorithms Automatically pre-programs erases chip sector Embedded ProgramAlgorithms Automatically writes verifies data specified address Data Polling Toggle feature detection program erase cycle completion Ready-Busy output (RY/BY) Hardware method detection program erase cycle completion Automatic sleep mode When addresses remain stable, automatically switch themselves power mode. VCCf write inhibit Hidden (Hi-ROM) region byte Hi-ROM, accessible through "Hi-ROM Enable" command sequence Factory serialized protected provide secure electronic serial number (ESN) WP/ACC input VIL, allows protection Kbytes both ends each boot sector, regardless sector protection/ unprotection status. VIH, allows removal boot sector protection VACC, increases program performance Program Suspend/Resume Suspends program operation allow read another address Erase Suspend/Resume Suspends erase operation allow read another sector within same device Please refer "MBM29DL640E" data sheet detailed function (Continued)
MB84VD23483EJ-90
(Continued)
FCRAM Power dissipation Operating max. Standby max. Four Power Dowm mode Sleep max. max. Partial max. Partial max. Power down control CE2r Byte write control: LB(DQ7-DQ0), UB(DQ15-DQ8) words Address Access Capability
FlexBankis trademark Fujitsu Limited, Japan. Embedded Eraseand Embedded Programare trademarks Advanced Micro Devices, Inc. FCRAMis trademark Fujitsu Limited, Japan.
MB84VD23483EJ-90
PACKAGE DIMENSION
FUJITSU LIMITED
further information please contact: Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3386 http://edevice.fujitsu.com/ North South America FUJITSU MICROELECTRONICS, INC. 3545 North First Street, Jose, 95134-1804, U.S.A. Tel: +1-408-922-9000 Fax: +1-408-922-9179 Customer Response Center Mon. Fri.: (PST) Tel: +1-800-866-8608 Fax: +1-408-922-9179 http://www.fujitsumicro.com/ Europe FUJITSU MICROELECTRONICS EUROPE GmbH Siebenstein 6-10, D-63303 Dreieich-Buchschlag, Germany Tel: +49-6103-690-0 Fax: +49-6103-690-122 http://www.fujitsu-fme.com/ Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE. LTD. #05-08, Lorong Chuan, Tech Park, Singapore 556741 Tel: +65-281-0770 Fax: +65-281-0220 http://www.fmap.com.sg/ Korea FUJITSU MICROELECTRONICS KOREA LTD. 1702 KOSMO TOWER, 1002 Daechi-Dong, Kangnam-Gu,Seoul 135-280 Korea Tel: +82-2-3484-7100 Fax: +82-2-3484-7111
Rights Reserved. contents this document subject change without notice. Customers advised consult with FUJITSU sales representatives before ordering. information circuit diagrams this document presented examples semiconductor device applications, intended incorporated devices actual use. Also, FUJITSU unable assume responsibility infringement patent rights other rights third parties arising from this information circuit diagrams. contents this document reproduced copied without permission FUJITSU LIMITED. FUJITSU semiconductor devices intended standard applications (computers, office automation other office equipments, industrial, communications, measurement equipments, personal household devices, etc.). CAUTION: Customers considering products special applications where failure abnormal operation directly affect human lives cause physical injury property damage, where extremely high levels reliability demanded (such aerospace systems, atomic energy controls, floor repeaters, vehicle operating controls, medical devices life support, etc.) requested consult with FUJITSU sales representatives before such use. company will responsible damages arising from such without prior approval. semiconductor devices have inherently certain rate failure. must protect against injury, damage loss from such failures incorporating safety design measures into your facility equipment such redundancy, fire protection, prevention over-current levels other abnormal operating conditions. products described this document represent goods technologies subject certain restrictions export under Foreign Exchange Foreign Trade Control Japan, prior authorization Japanese government should required export those products from Japan.
F0102 FUJITSU LIMITED Printed Japan

Stacked (Multi-Chip Package) FLASH MEMORY FCRAM FLASH MEMORY SRAM

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