Operation Speed 2.5Gb/s, Built D-FF (Re-timing Bypass mode: Selectable

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Operation Speed 2.5Gb/s, Built D-FF (Re-timing Bypass mode: Selectable

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2.5Gb/s GaAs Laser Driver with Re-Timing Function
Operation Speed 2.5Gb/s, Built D-FF (Re-timing Bypass mode: Selectable) Peak Modulation Current with load: 70mA (Min.) Bias Current: 70mA (Min.) Peak Bias Current Adjustment Compatible Input Single -5.2V Power Supply Duty Ratio Adjustment Output Shutdown Switch
FMM3175VI
DESCRIPTION
FMM3175VI 2.5Gb/s(OC-48) laser driver with re-timing function. D-FF built re-timing bypass mode selectable using selector(SEL) signal. peak modulation currents 70mA (Min.) with load, bias current available 70mA (Min.) FMM3175VI also duty control circuit output shutdown switch. ABSOLUTE MAXIMUM RATINGS (VDD 0V,Ta=25°C)
Parameter Supply Voltage Input Voltage Power Supply Current Peak Current Control Voltage Bias Current Control Voltage Storage Temperature Symbol Tstg Ratings -7.0 -2.0 +1.5 -2.0 +2.1 Unit
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, Tc=25°C, VSS=-5.2V, RL=25)
Parameter Maximum Data Rate Modulation Current Modulation Current when Shutdown Bias Current Bias Current when Shutdown Power Supply Current Rise Time Fall Time Duty Control Range Setup Time Hold Time Mark Density Monitor Output IPsd IBsd Duty Symbol Test Conditions -4.1V, -5.2V, VIP: Adjusted 70mA, VIB=-5.2V, HDI="H" -3.4V, -5.2V, -1.7V -3.4V, -5.2V, -0.9V -5.2V, -5.2V IP=70mA 2.5Gb/s, IP=70mA, SEL="H" SEL="H" (Re-timing mode) Min. Limit Typ. Max. Unit Gb/s
Rmk=1k Mark Density Cmk=1nF -1.85 -1.0 -0.80 100% -0.98 -0.50 -0.40 Duty=100 -0.10 -0.0
Edition Febraury 2001
FMM3175VI
RECOMMENDED OPERATING CONDITIONS
Parameter Supply Voltage Input Level High Input Level Peak Current Control Voltage Bias Current Control Voltage Duty Control Voltage Case Temperature Symbol Vdut
2.5Gb/s GaAs Laser Driver with Re-Timing Function
Test Conditions Min. -5.46 -1.05 -2.00 -1.80 Limit Typ. Max. -5.20 -4.94 -0.90 -0.80 -1.70 -1.55 +1.1 +1.8 -0.80 Unit
FMM3175VI Block Diagram
Vdut
IPMON
IBMON
Bias Current Driver HDIN Peak Current Driver
IBOUT
D-FF
Buffer
XOUT
HCKI
Mark Ratio Det.
2.5Gb/s GaAs Laser Driver with Re-Timing Function
OPERATION MODE
FMM3175VI
"SEL" signal determines operation mode between re-timing bypass modes. truth table follows:
Operation mode Re-timing (D-FF: active) Bypass(D-FF: bypassed)
SHUTDOWN CONTROL
Output Current Disable Enable
FUNCTION (Re-timing mode)
HDI(HDIN) H(L) L(H) Positive Edge, HCKI Negative Edge, Q/XQ: Hold Previous State XOUT
FUNCTION (Bypass mode)
HDI(HDIN) H(L) L(H) HCKI XOUT
FMM3175VI
2.5Gb/s GaAs Laser Driver with Re-Timing Function
Test Circuit
VDUT HDIN HCKI
IBMON IBOUT XOUT IPMON
Pulse Pattern Generator
Select
Oscilloscope
20dB
Shutdown Signal
0~1k Rmk: Cmk: 1000pF Other Capacitor: 0.068µF Vtt: Termination Voltage
Output Duty Control Characteristics
Duty -1.5 -1.4 -1.3 Vdut -1.2 -1.1
Peak Current Control Characteristics
Peak Current IP(mA) -5.4
-5.2V -5.2V 25°C 85°C
-5.0
-4.6
-4.2
-3.8
Peak Current Control Voltage VIP(V)
2.5Gb/s GaAs Laser Driver with Re-Timing Function
FMM3175VI Assignment
IBMON IPMON IBOUT XOUT
FMM3175VI
Description
Name VDUT Description Bias Current Control Voltage Output Duty Control Voltage Data Input (True) Data Input (Invert) Clock Input Operation Mode Selection Output Current Shutdown Input Supply Voltage Name IPMON XOUT IBOUT IBMON Description Modulation Current Monitor (VSS:-5.2V) Modulation Current Control Voltage Modulation Current Output (Invert) Modulation Current Output (True) Bias Current Output Mark Density Monitor Output (Invert) Mark Density Monitor Output (True) Bias Current Monitor (VSS: -5.2V)
View
HDIN HCKI
VDUT HDIN HCKI
Ground Ground\ Heat Sink(Back Side) Ground
Output Waveform
V:1.0V/div.
H:100ps/div.
2.5Gb/s -5.2V, 25°C
Bias Current Bias Current Control Voltage
Bias Current IB(mA) -5.4 -5.0 -4.6 -4.2 -3.8 -3.4 -3.0
-5.2V -5.2V 25°C 85°C
Bias Current Control Voltage VIB(V)
FMM3175VI
"VI" PACKAGE
0.18
2.5Gb/s GaAs Laser Driver with Re-Timing Function
Case Style "VI"
UNIT:
(0.45)
(0.25)
(0.9)
Heat Sink 2.8) (3.1) (3.6) (3.9)
(2.0)
Ground
(0.4)
0.65 4.55
0.15
0.13
(3.2) (3.3)
Unit:
further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC. Americas R.O.W.
2355 Zanker Jose, 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which hazardous human body environment. safety, observe following procedures:
www.fcsi.fujitsu.com
this product into mouth. alter form this product into gas, powder, liquid through burning, crushing, chemical processing these by-products dangerous human body inhaled, ingested, swallowed. Observe government laws company regulations when discarding this product. This product must discarded accordance with methods specified applicable hazardous waste procedures.
FME,
Fujitsu Microelectronics Europe GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire United Kingdom TEL: 1628 504800 FAX: 1628 504888
FUJITSU QUANTUM DEVICES LIMITED
Global Business Division Global Sales Support Department Shinjuku Daiichiseimei Building, 2-7-1 Nishishinjuku, Shinjuku-ku, Tokyo, 163-0721, Japan TEL: +81-3-5322-3356 FAX: +81-3-5322-3398
FUJITSU QUANTUM DEVICES SINGAPORE LTD. Hong Kong Branch
1101, Ocean Centre, Canton Tsim Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269
Fujitsu Limited reserves right change products specifications without notice. information does convey license under rights Fujitsu Limited others.
2001 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed U.S.A. FCSI0101M200

Operation Speed 2.5Gb/s, Built D-FF (Re-timing Bypass mode: Selectable

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