HYM7V64401B Q-Series Preliminary DESCRIPTION Hyundai HYM7V64401B
|
|
|
Top Searches for this datasheet
4Mx64 bits PC66 SDRAM DIMM
HYM7V64401B Q-Series Preliminary DESCRIPTION
Hyundai HYM7V64401B Q-Series 4Mx64bits Synchronous DRAM Modules composed four 4Mx16bit CMOS Synchronous DRAMs 400mil 54pin TSOP-II package 2Kbit EEPROM 8pin TSSOP package 144pin glassepoxy printed circuit board. 0.22uF 0.0022uF decoupling capacitors each SDRAM mounted PCB. HYM7V64401B Q-Series Small Outline Dual In-line Memory Modules suitable easy interchange addition 32Mbytes memory. HYM7V64401B Q-Series offering fully synchronous operation referenced positive edge clock. inputs outputs synchronized with rising edge clock input. data paths internally pipelined achieve very high bandwidth.
FEATURES
144pin SDRAM DIMM Serial Presence Detect with EEPROM 1.00" (25.40mm) Height with Double Sided components Single 0.3V power supply devices pins compatible with LVTTL interface Data mask function SDRAM devices internal four banks operation Auto refresh self refresh 4096 refresh cycles 64ms Programmable Burst Length Burst Type Full Page Sequential Burst Interleave Burst Programmable /CAS Latency Clocks
ORDERING INFORMATION
PART HYM7V64401BTQG-10 HYM7V64401BLTQG-10 MAX. FREQUENCY 100MHz 100MHz Banks INTERNAL BANK REF. POWER Normal Power TSOP-II Gold SDRAM PACKAGE PLATING
This document general product description subject change without notice. Hyundai Electronics does assume responsibility circuits described. patent licenses implied. Rev. 0.1/Jan.99 1999 Hyundai Electronics
PC66 SDRAM DIMM
HYM7V64401B Q-Series DESCRIPTION
NAME CK0, Clock Inputs DESCRIPTION System Clock Input. other inputs registered SDRAM rising edge CLK. Controls internal clock signal when deactivated, SDRAM will states among power down, suspend self refresh. Enables disables inputs except DQM. Select bank activated during /RAS activity. Select bank read/written during /CAS activity address RA0~RA11, Column address CA0~CA7 Auto-precharge flag /RAS define operation. Refer function truth table details. /CAS define operation. Refer function truth table details. define operation. Refer function truth table details. Controls output buffers read mode masks input data write mode. Multiplexed data input/output pins Power supply internal circuits input/output buffers Ground Serial Presence Detect Clock Input Serial Presence Detect Data input/output Connect Don'
CKE0 BA0,
Clock Enable Chip Select SDRAM Bank Address
A0~A11
Address Inputs
/RAS
Address Strobe
/CAS
Column Address Strobe
DQM0~DQM7 DQ0~DQ63
Write Enable Data Input/Output Mask Data Input/Output Power Supply (3.3V) Ground Clock Input Data Input/Output Connect
Rev. 0.1/Jan.99
PC66 SDRAM DIMM
HYM7V64401B Q-Series ASSIGNMENTS
FRONT SIDE NAME DQM0 DQM1 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 BACK SIDE NAME DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQM4 DQM5 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 CKE0 /CAS FRONT SIDE NAME DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 A10/AP DQM2 DQM3 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 BACK SIDE NAME *CK1 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQM6 DQM7 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63
Voltage
/RAS
Note connected with termination R/C. (Refer Block Diagram.)
Rev. 0.1/Jan.99
PC66 SDRAM DIMM
HYM7V64401B Q-Series BLOCK DIAGRAM
Note padding capacitance termination 10pF.
Rev. 0.1/Jan.99
PC66 SDRAM DIMM
HYM7V64401B Q-Series SERIAL PRESENCE DETECT
BYTE NUMBER BYTE0 BYTE1 BYTE2 BYTE3 BYTE4 BYTE5 BYTE6 BYTE7 BYTE8 BYTE9 BYTE10 BYTE11 BYTE12 BYTE13 BYTE14 BYTE15 BYTE16 BYTE17 BYTE18 BYTE19 BYTE20 BYTE21 BYTE22 BYTE23 BYTE24 BYTE25 BYTE26 BYTE27 BYTE28 BYTE29 BYTE30 BYTE31 BYTE32 BYTE62 BYTE63 BYTE64 BYTE65 BYTE72 FUNCTION DESCRIBED Bytes Written into Serial Memory Module Manufacturer Total Bytes Memory Device Fundamental Memory Type Addresses This Assembly Column Addresses This Assembly Module Banks This Assembly Data Width This Assembly Data Width This Assembly (Continued) Voltage Interface Standard This Assembly SDRAM Cycle Time /CAS Latency=3 Access Time from Clock /CAS Latency=3 DIMM Configuration Type Refresh Rate/Type Primary SDRAM Width Error Checking SDRAM Width Minimum Clock Delay Back Back Random Column Address Burst Lengths Supported Banks Each SDRAM Device SDRAM Device Attributes, Latency SDRAM Device Attributes, Latency SDRAM Device Attributes, Write Latency SDRAM Module Attributes SDRAM Device Attributes, General SDRAM Cycle Time /CAS Latency=2 Access Time from Clock /CAS Latency=2 SDRAM Cycle Time /CAS Latency=1 Access Time from Clock /CAS Latency=1 Minimum Precharge Time (tRP) Minimum Active Active Delay (tRRD) Minimum /RAS /CAS Delay (tRCD) Minimum /RAS Pulse width (tRAS) Module Bank Density Superset Information (may used future) Revision Checksum Bytes 0~62 Manufacturer JEDEC Code .Manufacturer JEDEC Code FUNCTION Bytes Bytes SDRAM Bank Bits LVTTL 10ns None 15.625µs Self Refresh Supported None tCCD 1,2,4,8,Full Page Banks /CAS Latency=1,2,3 Latency=0 Latency=0 Neither Buffered Registered +/-10% voltage tolerance, Burst Read Single Write, Precharge All, Auto Precharge, Early Precharge 12ns 30ns 24ns 30ns 30ns 30ns 50ns 32MB Hyundai JEDEC Unused (Korea) (United States) (Europe) VALUE NOTE
Manufacturing Location
Rev. 0.1/Jan.99
PC66 SDRAM DIMM
HYM7V64401B Q-Series
Continued
BYTE NUMBER BYTE73 BYTE74 BYTE75 BYTE76 BYTE77 BYTE78 BYTE79 BYTE80 BYTE81 BYTE82 BYTE83 BYTE84 BYTE85 BYTE86 BYTE87 BYTE91 BYTE92 BYTE93 BYTE94 BYTE95 BYTE99 ~125 BYTE126 BYTE127 BYTE128 ~256 FUNCTION DESCRIBED Manufacturer' Part Number (Component) Manufacturer' Part Number (Voltage Interface) Manufacturer' Part Number (Data Width) .Manufacturer' Part Number (Data Width) Manufacturer' Part Number (Memory Depth) Manufacturer' Part Number (Refresh) Manufacturer' Part Number (Internal Banks) Manufacturer' Part Number (Generation) Manufacturer' Part Number (Package Type) Manufacturer' Part Number (Module Type) Manufacturer' Part Number (Plating Type) Manufacturer' Part Number (Hyphen) Manufacturer' Part Number (Min. Cycle Time) .Manufacturer' Part Number (Min. Cycle Time) Manufacturer' Part Number Revision Code (for Component) .Revision Code (for PCB) Manufacturing Date .Manufacturing Date Assembly Serial Number Manufacturer Specific Data (may used future) System Frequency Support Intel Specification Latency Support Unused Storage Locations FUNCTION (SDRAM) (3.3V, LVTTL) Refresh) Banks) (TSOPII) (x16 based DIMM) (Gold) (Hyphen) Blanks Process Code Process Code Work Week Year Serial Number None 66MHz Latency VALUE NOTE
Note: bank address excluded. 1,2,4,8 Interleave Burst Type adopted. ASCII adopted. Basically HYUNDAI writes Part except Byte 73-90 limited bytes from byte efficiently. fixed dependent.
BYTE81~87 L-Part (HYM7V64401BLTQG)
BYTE NUMBER BYTE81 BYTE82 BYTE83 BYTE84 BYTE85 BYTE86 BYTE87 FUNCTION DESCRIBED Manufacturer' Part Number (Power) Manufacturer' Part Number (Package Type) Manufacturer' Part Number (Module Type) Manufacturer' Part Number (Plating Type) Manufacturer' Part Number (Hyphen) Manufacturer' Part Number (Min. Cycle Time) .Manufacturer' Part Number (Min. Cycle Time) FUNCTION (Low Power) (TSOPII) (x16 based DIMM) (Gold) (Hyphen) VALUE NOTE
Rev. 0.1/Jan.99
PC66 SDRAM DIMM
HYM7V64401B Q-Series ABSOLUTE MAXIMUM RATINGS
PARAMETER Ambient Temperature Storage Temperature Voltage relative Voltage relative Short Circuit Output Current Power Dissipation Soldering Temperature Time TSTG VIN, VOUT VDD, VDDQ TSOLDER SYMBOL RATING -1.0 -1.0 UNIT
Note Operation above absolute maximum adversely affect device reliability.
OPERATING CONDITION
70°C) PARAMETER Power Supply Voltage Input High Voltage Input Voltage SYMBOL TYP. UNIT NOTE
Note voltage referenced (max) acceptable 5.6V pulse width with duration. (min) acceptable -2.0V pulse width with duration.
OPERATING CONDITION
70°C, 0.3V, PARAMETER Input High Level Voltage Input Timing Measurement Reference Level Voltage Input Rise Fall Time Output Timing Measurement Reference Level Voltage Output Load Capacitance Access Time Measurement SYMBOL Vtrip Voutref VALUE *Note UNIT
Note Output load measure access time equivalent gates capacitor (50pF). details, refer AC/DC output circuit.
Rev. 0.1/Jan.99
PC66 SDRAM DIMM
HYM7V64401B Q-Series CAPACITANCE
25°C, 1MHz) PARAMETER CKE0 Input Capacitance A0~A11, BA0, /RAS, /CAS, DQM0~DQM7 Data Input/Output Capacitance DQ0~DQ63 SYMBOL CIN1 CIN2 CIN3 CIN4 CIN5 CIN6 CI/O TYP. UNIT
OUTPUT LOAD CIRCUIT
Rev. 0.1/Jan.99
PC66 SDRAM DIMM
HYM7V64401B Q-Series CHARACTERISTICS
70°C, 0.3V) PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Voltage SYMBOL UNIT NOTE -4mA +4mA
Note 3.6V. other pins tested under DOUT disabled. VOUT 3.6V.
CHARACTERISTICS
70°C, 0.3V, SPEED PARAMETER SYMBOL TEST CONDITION Operating Current Precharge Standby Current Power Down Mode IDD1 IDD2P IDD2PS IDD2N Precharge Standby Current Power Down Mode IDD2NS Active Standby Current Power Down Mode IDD3P IDD3PS IDD3N Active Standby Current Power Down Mode IDD3NS Burst Length bank active tRC(min), VIL(max), VIL(max), VIH(min), VIH(min), Input signals changed time during 2clks. other pins 0.2V 0.2V VIH(max), Input signals stable. VIL(max), VIL(max), VIH(min), VIH(min), Input signals changed time during 2clks. other pins 0.2V 0.2V VIH(max), Input signals stable. tCK(min), banks active IDD5 IDD6 tRRC tRRC(min), banks active 0.2V UNIT NOTE
Burst Mode Current
Operating
IDD4
Auto Refresh Current Self Refresh Current
Note IDD1 IDD4 depend output loading cycle rates. Specified values measured with output open. Min. tRRC (Refresh /RAS cycle time) shown CHARACTERISTICS L-part (HYM7V64401BLTQG)
Rev. 0.1/Jan.99
PC66 SDRAM DIMM
HYM7V64401B Q-Series CHARACTERISTICS
operating conditions unless otherwise noted) PARAMETER /CAS Latency /CAS Latency SYMBOL System Clock Cycle Time tCK3 tCK2 tCHW tCLW tAC3 tAC2 tOLZ tOHZ3 tOHZ2 1000 /CAS Latency /CAS Latency UNIT NOTE
Clock High Pulse Width Clock Pulse Width Access Time from Clock /CAS Latency
Data-Out Hold Time Data-Input Setup Time Data-Input Hold Time Address Setup Time Address Hold Time Setup Time Hold Time Command Setup Time Command Hold Time Data Output Low-Z time Data Output High-Z time /CAS Latency
Note Assume (input rise fall time) 1ns. Access times measured with input signals 1v/ns edge rate.
Rev. 0.1/Jan.99
PC66 SDRAM DIMM
HYM7V64401B Q-Series CHARACTERISTICS
PARAMETER Operation Auto Refresh SYMBOL /RAS Time Cycle tRRC tRCD tRAS tRRD tCCD tWTL tDPL tDAL tDQZ tDQM tMRD tPROZ3 tPROZ2 tPDE tSRE tREF 100K /CAS Latency UNIT NOTE
/RAS /CAS Delay /RAS Active Time /RAS Precharge Time /RAS /RAS Bank Active Delay /CAS /CAS Delay Write Command Data-in Delay Data-in Precharge Command Data-in Active Command Data-out Hi-Z Data-in Mask Command Precharge Data Output Hi-Z /CAS Latency
Power Down Exit Time Self Refresh Exit Time Refresh Time
Note command given tRRC after self refresh exit.
Rev. 0.1/Jan.99
PC66 SDRAM DIMM
HYM7V64401B Q-Series OPERATING OPTION TABLE
HYM7V64401BTQG-10 HYM7V64401BLTQG-10
/CAS LATENCY 100MHz (10.0ns) 83MHz (12.0ns) 66MHz (15.0ns) 3CLKS 2CLKS 2CLKS tRCD 3CLKS 3CLKS 2CLKS tRAS 5CLKS 5CLKS 4CLKS 8CLKS 8CLKS 6CLKS 3CLKS 3CLKS 2CLKS
COMMAND TRUTH TABLE
CKEn-1 Mode Register Operation Bank Active Read Read with Autoprecharge Write Write with Autoprecharge Precharge Banks Precharge Selected Bank Burst Stop Auto Refresh Entry Self Refresh Exit Entry Precharge Power Down Exit Entry Clock Suspend Exit CKEn /RAS /CAS ADDR A10/ NOTE
code
Note Existing Self Refresh occurs asynchronously bringing from high. Don' care, Logic High, logic Low, Bank Address, Column Address, code Operand code, operation
Rev. 0.1/Jan.99
PC66 SDRAM DIMM
HYM7V64401B Q-Series PACKAGE DIMENSIONS
Rev. 0.1/Jan.99
Other recent searches
TPCP8507 - TPCP8507 TPCP8507 Datasheet
LB-303AK - LB-303AK LB-303AK Datasheet
FW808 - FW808 FW808 Datasheet
74HC2G126 - 74HC2G126 74HC2G126 Datasheet
74HCT2G126 - 74HCT2G126 74HCT2G126 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
