These P-Channel enhancement mode power field effect transistors produc

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NDH8447 P-Channel Enhancement Mode Field Effect Transistor
These P-Channel enhancement mode power field effect transistors produced using National's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance provide superior switching performance. These devices particularly suited voltage applications such notebook computer power management other battery powered circuits where fast switching, in-line power loss, resistance transients needed.
1996
Features
-4.4A, -30V. RDS(ON) 0.053 -10V RDS(ON) 0.095 -4.5V High density cell design extremely RDS(ON). Enhanced SuperSOTTM-8 small outline surface mount package with high power current handling capability.
SuperSOTTM-8
Absolute Maximum Ratings
Symbol Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation
25°C unless otherwise noted
NDH8447
(Note
Units
-4.4
(Note (Note (Note
TJ,TSTG
Operating Storage Temperature Range
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
NDH8447 Rev.
Electrical Characteristics
Symbol Parameter CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON)
25°C unless otherwise noted)
Conditions
Units
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
-250 55°C VDS= VGS, -250 -4.4 125°C -4.5 -3.4
-100
Gate Body Leakage, Forward Gate Body Leakage, Reverse
CHARACTERISTICS (Note Gate Threshold Voltage 125°C -0.7 Static Drain-Source On-Resistance -1.5 -1.2 -2.2
0.045 0.053 0.075 0.08 0.11 0.095
ID(on) Ciss Coss Crss tD(on) tD(off)
On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
-4.4
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note VGEN RGEN -4.4
NDH8447 Rev.
Electrical Characteristics
Symbol
Notes:
25°C unless otherwise noted)
Parameter
Conditions
-1.5
Units
DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage -1.5
(Note
-0.8
-1.2
junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
+RCA
DS(ON)@T
Typical using board layouts shown below 4.5"x5" FR-4 still environment: 70oC/W when mounted cpper. 125oC/W when mounted 0.026 copper. 135oC/W when mounted 0.005 copper.
Scale letter size paper
Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
NDH8447 Rev.
Typical Electrical Characteristics
DRAIN-SOURCE CURRENT
-5.0
DS(on) NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-10V
-8.0 -6.0 -4.5 -4.0
-3.5V
-4.0 -4.5 -5.0
-3.5
-6.0 -8.0
-3.0
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
DS(ON) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
=-4.4A -10V
DS(on) NORMALIZED
-10V
125°C
25°C
-55°C
JUNCTION TEMPERATURE (°C)
DRAIN CURRENT
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Drain Current Temperature.
-10V
DRAIN CURRENT
25°C 125°C
NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE
-55°C
-250µA
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (°C)
Figure Transfer Characteristics.
Figure Gate Threshold Variation with Temperature.
NDH8447 Rev.
Typical Electrical Characteristics (continued)
NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE
1.08 1.06 1.04 1.02 0.98 0.96 0.94 JUNCTION TEMPERATURE (°C) REVERSE DRAIN CURRENT
-250µA
125°C
25°C
-55°C
0.01
0.001
-VSD BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
2000 -VGS GATE-SOURCE VOLTAGE
-4.4A
-5.0V
1000 CAPACITANCE (pF)
-10V -15V
-VDS DRAIN SOURCE VOLTAGE
GATE CHARGE (nC)
Figure Capacitance Characteristics.
Figure Gate Charge Characteristics.
-VDD
d(on)
toff
td(off)
VOUT
I10%
PULSE WIDTH
INVERTED
Figure Switching Test Circuit.
Figure Switching Waveforms.
NDH8447 Rev.
Typical Electrical ThermalCharacteristics (continued)
-10V
-55°C 25°C
STEADY-STATE POWER DISSIPATION
TRANSCONDUCTANCE (SIEMENS)
125°C
4.5"x5" FR-4 Board Still
DRAIN CURRENT
COPPER MOUNTING AREA
Figure Transconductance Variation with Drain Current Temperature.
STEADY-STATE DRAIN CURRENT
4.5"x5" FR-4 Board Still -10V
Figure SOT-8 Maximum Steady-State Power Dissipation versus Copper Mounting Area.
DRAIN CURRENT
0.03
SINGLE PULSE Note 25°C
COPPER MOUNTING AREA
0.01
DRAIN-SOURCE VOLTAGE
Figure Maximum Steady-State Drain Current versus Copper Mounting Area.
Figure Maximum Safe Operating Area.
TRANSIENT THERMAL RESISTANCE 0.05 0.03 0.02 0.01 0.0001
0.02 0.01 Single Pulse 0.05
r(t), NORMALIZED EFFECTIVE
r(t) Note
P(pk)
Duty Cycle, 0.01 TIME (sec)
0.001
Figure Transient Thermal Response Curve.
Note: Thermal characterization performed using conditions described note Transient thermal response will change depending circuit board design.
NDH8447 Rev.
NDH8447 Rev.

These P-Channel enhancement mode power field effect transistors produc

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