32Kx8bit CMOS FAST SRAM HY638256 high-speed 32,768 8-bits CMOS st
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HY638256 Series
32Kx8bit CMOS FAST SRAM
HY638256 high-speed 32,768 8-bits CMOS static fabricated using Hyundai's high performance twin CMOS process technology. This high reliability process coupled with high-speed circuit design techniques, yields maximum access time 15ns. HY638256 data retention mode that guarantees data remain valid minimum power supply voltage volt. suitable high-density high-speed system applications.
FEATURES
Single 5V±10% Power Supply High speed 15/20/25ns(max.) power consumption(Max.) Mode Conditions Current Units Operating 15ns 20/25ns Standby CMOS Battery backup(L-part) 2.0V(min) data retention Fully static operation Tri-state outputs clock refresh required compatible inputs outputs Standard configuration 28pin 300mil 28pin 13.4 TSOP-I
BLOCK DIAGRMM
INPUT BUFFER COLUMN DECODER SENSE DECODER I/O1 OUTPUT BUFFER I/O8
CONTROL LOGIC
CONNECTION
I/O1 I/O2 I/O3 /CS1 I/O8 I/O7 I/O6 I/O5 I/O4
I/O8 I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1
TSOP-I(Standard)
Name A0~A14 I/O1~I/O8
Function Chip Select Write Enable Output Enable Adderss Input Data Input/Output Power(+5.0V) Ground
ORDERING INFORMATION
Part HY638256J HY638256LJ HY638256T1 HY638256LT1 Speed 15/20/25 15/20/25 15/20/25 15/20/25 Power L-part L-part Package TSOP-I Standard TSOP-I Standard
This document general product description subject change without notice. Hyundai Electronics does assume responsibility circuits described. patent licenses implied. Rev.01 Jul.96 Hyundai Semiconductor
WRITE DRIVER
MEMORY ARRAY 256x1024
HY638256 Series
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Vcc, VIN, VOUT TSTG IOUT TSOLDER Parameter Power Supply, Input/Output Voltage Operating Temperature Storage Temperature Power Dissipation Data Output Current Lead Soldering Temperature Time Rating -0.5 Unit
Note Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS cause permanent damage device. This stress rating only functional operation device these other conditions above those indicated operational this specification implied. Exposure absolute maximum rating conditions extended period affect reliability.
RECOMMENDED OPERATING CONDITIONS
TA=0°C 70°C Symbol Parameter Supply Voltage Ground Input High Voltage Input Voltage Min. -0.5(1) Typ. Max. Vcc+0.5 Unit
Note -3.0V pulse width less than 10ns
TRUTH TABLE
Mode Standby Output Disabled Read Write Operation Hi-Z Hi-Z DOUT
Note: H=VIH, L=VIL, X=Don't care
Rev.01 Jul.96
HY638256 Series
ELECTRICAL CHARACTERISTICS
5.0V±10%, 70°C, unless otherwise specified. Symbol Parameter Test Conditions Input Leakage Current Output Leakage Current VOUT <VCC, ICC1 Average Operating VIL, II/O 0mA, 15ns Current Min. Duty Cycle 100% 20/25ns Standby Current VIH, VIN=VIH VIL, (TTL Inputs) Min. Cycle ISB1 CMOS Standby Current VCC-0.2V, (CMOS Inputs) VCC-0.2V 0.2V Output Voltage 8.0mA Output High Voltage -4.0mA Note Typical values 5.0V, 25°C Type Unit
CHARACTERISTICS
5.0V±10%, 70°C, unless otherwise specified. Parameter Symbol READ CYCLE Read Cycle Time Address Access Time tACS Chip Select Access Time Output Enable Output Valid tCLZ Chip Select Output tOLZ Output Enable Output tCHZ Chip Deselecting Output High tOHZ Disable Output High Output Hold from Address Change WRITE CYCLE Write Cycle Time Chip Select Write Address Valid Write Address Set-up Time Write Pulse Width Write Recovery Time tWHZ Write Output High Data Write Time Overlap Data Hold from Write Time Output Active from Write
Unit
Rev.01 Jul.96
HY638256 Series
TEST CONDITIONS
5.0V±10%, 70°C, unless otherwise specified. Parameter Value Input Pulse Level Input Rise Fall Time Input Output Timing Reference Level 1.5V Output Load below
TEST LOADS
Output Load Output Load (for tCHZ, tCLZ, tOHZ, tOLZ, tWHZ tOW)
DOUT CL=30pF(1) DOUT
CL=5pF(1)
Note Including scope capacitance
CAPACITANCE
25°C, 1.0MHz) Symbol Parameter Input Capacitance CI/O Input/Output Capacitance Condition VI/O Max. Unit
Note This parameter sampled 100% tested
Rev.01 Jul.96
HY638256 Series
TIMING DIAGRAM
READ CYCLE
ADDR tOLZ tACS tCLZ Data High-Z Data Valid tOHZ tCHZ
Note (Read Cycle) tCHZ tOHZ defined time which outputs achieve open circuit conditions referenced output voltage levels. given temperature voltage condition, tCHZ max. less than tCLZ min. both given device from device device. high read cycle.
READ CYCLE
ADDR Data Previous Data Data Valid
Note (Read Cycle) high read cycle. Device continuously selected /CS=VIL. /OE=VIL.
Rev.01 Jul.96
HY638256 Series
WRITE CYCLE 1(/OE Clocked)
ADDR
Data tOHZ
Data
Data Valid
WRITE CYCLE 2(/OE Fixed)
ADDR Data tWHZ Data Data Valid
Rev.01 Jul.96
HY638256 Series
Notes: write occurs during overlap /WE. write begins latest transition among going low, going write ends earliest transition among going high going high. measured from beginning write write. measured from later going write. measured from address valid beginning write. measured from write address change. applied case write ends going high. read mode during this period, pins output low-Z state, inputs opposite phase output must applied because contention occur. goes simultaneously with going after going low, outputs remain high impedance state. DOUT same phase latest written data write cycle. DOUT read data address.
DATA RETENTION ELECTRIC CHARACTERISTIC(L Version)
TA=0°C 70°C Symbol Parameter Data Retention ICCDR tCDR Data Retention Current Chip Deselect Data Retention Time Operating Recovery Time Test Condition Power 0.2V VCC-0.2V 0.2V 2.0V Data Retention Timing Diagram
tRC(2)
Unit
Notes Typical values condition TA=25°C read cycle time
DATA RETENTION WAVEFORM
4.5V tCDR DATA RETENTION MODE
2.2V CS>VCC-0.2V
RELIABILITY SPEC.
TEST MODE LATCH TEST SPEC. 2000V 250V -100mA 100mA
Rev.01 Jul.96
HY638256 Series
PACKAGE INFORMATION
28pin 300mil Small Outline J-Form Package
MAX. UNIT INCH(mm) MIN. 0.296(7.5184) 0.305(7.747)
0.7210(18.3134) 0.7290(18.5166) 0.332(8.4328) 0.3390(8.6106) 0.138(3.505) 0.148(3.789) 0.260(6.604) 0.274(6.9596) 0.03(0.762) 0.04(1.016)
0.016(0.4064) 0.020(0.5080)
0.050(1.27)BSC
28pin 8x13.4mm Thin Small Outline Package Standard(T1)
UNIT INCH(mm)
MAX. MIN.
0.468(11.9) 0.460(11.7) 0.536(13.6) 0.520(13.2)
0.319(8.1) 0.311(7.9)
0.040(1.02) 0.036(0.91) 0.008(0.20) 0.002(0.05)
0.027(0.7) 0.012(0.3)
0.008(0.2) 0.004(0.1)
0.022(0.55 BSC)
Rev.01 Jul.96
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