BF989 N-channel dual-gate MOS-FET Product specification File unde

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BF989 N-channel dual-gate MOS-FET Product specification File unde

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BF989 N-channel dual-gate MOS-FET
Product specification File under Discrete Semiconductors, SC07 April 1991
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
FEATURES Protected against excessive input voltage surges integrated back-to-back diodes between gates source. APPLICATIONS applications such television tuners Professional communication equipment. PINNING SYMBOL source drain gate gate
view Marking code: MAp.
MAM039 handbook, halfpage
BF989
DESCRIPTION Depletion type field-effect transistor plastic SOT143 microminiature package with interconnected source substrate.
DESCRIPTION
Fig.1 Simplified outline (SOT143) symbol.
QUICK REFERENCE DATA SYMBOL Ptot Cig1-s PARAMETER drain-source voltage drain current total power dissipation junction temperature transfer admittance feedback capacitance noise figure kHz; VG2-S MHz; VG2-S input capacitance gate MHz; VG2-S Tamb CONDITIONS TYP. MAX. UNIT
MHz; BSopt; VG2-S
April 1991
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
LIMITING VALUES according with Absolute Maximum Rating System (IEC 134). SYMBOL ID(AV) IG1-S IG2-S Ptot Tstg PARAMETER drain-source voltage drain current (DC) average drain current gate 1-source current gate 2-source current total power dissipation storage temperature range junction temperature Tamb note CONDITIONS MIN. MAX. +150
BF989
UNIT
THERMAL CHARACTERISTICS SYMBOL PARAMETER thermal resistance from junction ambient CONDITIONS free air; note VALUE UNIT
Note Limiting values Thermal characteristics Device mounted ceramic substrate
handbook, halfpage
MGE792
Ptot (mW)
Tamb (°C)
Fig.2 Power derating curve.
April 1991
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
STATIC CHARACTERISTICS unless otherwise specified. SYMBOL IG1-SS IG2-SS IDSS PARAMETER gate cut-off current gate cut-off current drain-source cut-off voltage CONDITIONS VG1-S VG2-S VG2-S VG1-S VG1-S VG2-S IG1-SS VG2-S IG2-SS VG1-S VG2-S VG1-S MIN.
BF989
MAX. -2.7 -2.7
UNIT
V(BR)G1-SS gate 1-source breakdown voltage V(BR)G2-SS gate 2-source breakdown voltage V(P)G1-S V(P)G2-S gate 1-source cut-off voltage gate 2-source cut-off voltage
DYNAMIC CHARACTERISTICS Measuring conditions (common source): VG2-S Tamb SYMBOL Cig1-s Cig2-s PARAMETER transfer admittance input capacitance gate input capacitance gate feedback capacitance output capacitance noise figure MHz; BSopt MHz; BSopt CONDITIONS MIN. TYP. UNIT
April 1991
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
PACKAGE OUTLINE
BF989
handbook, full pagewidth
0.75 0.60
0.150 0.090
0.88
0.48
MBC845
VIEW
Dimensions also Soldering recommendations.
Fig.3 SOT143.
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale. This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
April 1991
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
NOTES
BF989
April 1991
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
NOTES
BF989
April 1991
Philips Semiconductors worldwide company
Argentina: South America Australia: Waterloo Road, NORTH RYDE, 2113, Tel. 9805 4455, Fax. 9805 4466 Austria: Computerstr. A-1101 WIEN, P.O. 213, Tel. 101, Fax. 1210 Belarus: Hotel Minsk Business Center, Bld. 1211, Volodarski Str. 220050 MINSK, Tel. +375 733, Fax. +375 Belgium: Netherlands Brazil: South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, James Bourchier Blvd., 1407 SOFIA, Tel. +359 211, Fax. +359 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. 7381 China/Hong Kong: Hong Kong Industrial Technology Centre, Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: South America Czech Republic: Austria Denmark: Prags Boulevard 1919, DK-2300 COPENHAGEN Tel. 2636, Fax. 1949 Finland: Sinikalliontie FIN-02630 ESPOO, Tel. +358 615800, Fax. +358 61580/xxx France: Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. 6161, Fax. 6427 Germany: D-20097 HAMBURG, Tel. Fax. Greece: 25th March Street, 17778 TAVROS/ATHENS, Tel. 4894 339/239, Fax. 4814 Hungary: Austria India: Philips INDIA Ltd, Shivsagar Estate, Block, Annie Besant Worli, MUMBAI 018, Tel. 4938 541, Fax. 4938 Indonesia: Singapore Ireland: Newstead, Clonskeagh, DUBLIN Tel. +353 7640 000, Fax. +353 7640 Israel: RAPAC Electronics, Kehilat Saloniki AVIV 61180, Tel. +972 0444, Fax. +972 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza Novembre 20124 MILANO, Tel. 6752 2531, Fax. 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. 3740 5130, Fax. 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. 1412, Fax. 1415 Malaysia: Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. 5214, Fax. 4880 Mexico: 5900 Gateway East, Suite 200, PASO, TEXAS 79905, Tel. +9-5 7381 Middle East: Italy Netherlands: Postbus 90050, 5600 EINDHOVEN, Bldg. Tel. 82785, Fax. 88399 Zealand: Wagener Place, C.P.O. 1041, AUCKLAND, Tel. 4160, Fax. 7811 Norway: Manglerud 0612, OSLO, Tel. 8000, Fax. 8341 Philippines: Philips Semiconductors Philippines Inc., Valero Salcedo Village, P.O. 2108 MCC, MAKATI, Metro MANILA, Tel. 6380, Fax. 3474 Poland: Lukiska 04-123 WARSZAWA, Tel. 2831, Fax. 2327 Portugal: Spain Romania: Italy Russia: Philips Russia, Usatcheva 35A, 119048 MOSCOW, Tel. 9145, Fax. 9144 Singapore: Lorong Payoh, SINGAPORE 1231, Tel. 2538, Fax. 6500 Slovakia: Austria Slovenia: Italy South Africa: S.A. PHILIPS Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 7430 Johannesburg 2000, Tel. 5911, Fax. 5494 South America: Rocio 220, floor, Suite 04552-903 Paulo, PAULO Brazil, Tel. 2333, Fax. 1849 Spain: Balmes 08007 BARCELONA, Tel. 6312, Fax. 4107 Sweden: Kottbygatan Akalla, S-16485 STOCKHOLM, Tel. 2000, Fax. 2745 Switzerland: Allmendstrasse 140, CH-8027 Tel. 2686, Fax. 7730 Taiwan: PHILIPS TAIWAN Ltd., 23-30F, Chung Hsiao West Road, Sec. P.O. 22978, TAIPEI 100, Tel. +886 4443, Fax. +886 4444 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. 4090, Fax. 0793 Turkey: Talatpasa Cad. 80640 Tel. 2770, Fax. 6707 Ukraine: PHILIPS UKRAINE, Patrice Lumumba str., Building Floor 252042 KIEV, Tel. +380 2776, Fax. +380 0461 United Kingdom: Philips Semiconductors Ltd., Bath Road, Hayes, MIDDLESEX 5BX, Tel. 5000, Fax. 8421 United States: East Arques Avenue, SUNNYVALE, 94088-3409, Tel. 7381 Uruguay: South America Vietnam: Singapore Yugoslavia: PHILIPS, Pasica 5/v, 11000 BEOGRAD, Tel. +381 344, Fax.+381
other countries apply Philips Semiconductors, Marketing Sales Communications, Building BE-p, P.O. 218, 5600 EINDHOVEN, Netherlands, Fax. 24825 Philips Electronics N.V. 1996
Internet:
SCA52
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
117061/00/02/pp8
Date release: April 1991
Document order number:
9397 01541

BF989 N-channel dual-gate MOS-FET Product specification File unde

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