BF901; BF901R Silicon n-channel dual gate MOS-FETs Product specif
|
|
|
Top Searches for this datasheet
BF901; BF901R Silicon n-channel dual gate MOS-FETs
Product specification File under Discrete Semiconductors, SC07 November 1992
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
FEATURES Intended voltage operation Short channel transistor with high ratio :Cis noise gain-controlled amplifier BF901R reverse pinning. DESCRIPTION Enhancement type field-effect transistors plastic microminiature SOT143 SOT143R envelopes, with source substrate interconnected. They intended applications, such television tuners professional communications equipment especially suited voltage operation. These MOS-FET tetrodes protected against excessive input voltage surges integrated back-to-back diodes between gates source. PINNING drain gate gate DESCRIPTION source
Marking code: MO1.
BF901; BF901R
QUICK REFERENCE DATA SYMBOL Ptot Cig1-s PARAMETER drain-source voltage drain current total power dissipation junction temperature transfer admittance input capacitance gate feedback capacitance noise figure 2.35 TYP. MAX. 2.75 UNIT
handbook, halfpage
view
MAM039
Fig.1 Simplified outline (SOT143) symbol.
handbook, halfpage
view
MAM040
Marking code: MO2.
Fig.2 Simplified outline (SOT143R) symbol.
November 1992
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
LIMITING VALUES accordance with Absolute Maximum System (IEC 134). SYMBOL VD-G2 ±IG1-S ±IG2-S Ptot PARAMETER drain-source voltage drain-gate voltage drain current gate 1-source current gate 2-source current total power dissipation BF901 BF901R Tstg storage temperature junction temperature CONDITIONS
BF901; BF901R
MIN.
MAX.
UNIT
Tamb (note Tamb (note
THERMAL RESISTANCE SYMBOL BF901 BF901R Note Device mounted printboard. PARAMETER thermal resistance from junction ambient (note THERMAL RESISTANCE
MBB756
handbook, halfpage
(mW) BF901R BF901
Tamb (°C)
Fig.3 Power derating curve.
November 1992
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
STATIC CHARACTERISTICS SYMBOL ±IG1-SS ±IG2-SS ±V(BR)G1-SS ±V(BR)G2-SS VG1-S(th) VG2-S(th) IDSX PARAMETER gate cut-off current gate cut-off current gate 1-source breakdown voltage gate 2-source breakdown voltage gate 1-source threshold voltage gate 2-source threshold voltage drain-source current CONDITIONS ±VG1-S VG2-S ±VG2-S VG1-S ±IG1-SS VG2-S ±IG2-SS VG1-S VG2-S VG1-S
BF901; BF901R
MIN.
MAX.
UNIT
VG1-S VG2-S
DYNAMIC CHARACTERISTICS Measuring conditions (common source): VG2-S Tamb SYMBOL Cig1-s Cig2-s PARAMETER transfer admittance input capacitance gate input capacitance gate output capacitance feedback capacitance noise figure MHz; Bsopt. MHz; Bsopt. CONDITIONS pulsed; MIN. TYP. 2.35 MAX. UNIT 2.75
November 1992
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
PACKAGE OUTLINE Plastic surface mounted package; reverse pinning; leads
BF901; BF901R
SOT143R
detail
scale
DIMENSIONS original dimensions) UNIT 0.48 0.38 0.88 0.78 0.15 0.09 0.55 0.25 0.45 0.25
OUTLINE VERSION SOT143R
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-03-10
November 1992
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
BF901; BF901R
Plastic surface mounted package; leads
SOT143B
detail
scale
DIMENSIONS original dimensions) UNIT 0.48 0.38 0.88 0.78 0.15 0.09 0.45 0.15 0.55 0.45
OUTLINE VERSION SOT143B
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
November 1992
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values
BF901; BF901R
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications. data this specification extracted from full data sheet with same type number title. detailed information relevant data sheet data handbook.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
November 1992
Other recent searches
STK822 - STK822 STK822 Datasheet
PXI-4204 - PXI-4204 PXI-4204 Datasheet
NTE1219 - NTE1219 NTE1219 Datasheet
L7C197 - L7C197 L7C197 Datasheet
HY57V28820A - HY57V28820A HY57V28820A Datasheet
HM621400H - HM621400H HM621400H Datasheet
ELT24 - ELT24 ELT24 Datasheet
2SB817 - 2SB817 2SB817 Datasheet
2SD1047 - 2SD1047 2SD1047 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
