BF410A N-channel silicon field-effect transistors Product specifi

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BF410A N-channel silicon field-effect transistors Product specifi

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BF410A N-channel silicon field-effect transistors
Product specification File under Discrete Semiconductors, SC07 December 1990
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors plastic TO-92 variant; intended applications range. These FETs supplied four IDSS groups. Special features feedback capacitance noise figure. Thanks these special features BF410 very suitable applications such stages portables (type radios (type mains radios (type mixer stage (type PINNING TO-92 VARIANT drain source gate
BF410A
handbook, halfpage
MAM257
Fig.1 Simplified outline symbol
QUICK REFERENCE DATA Drain-source voltage Drain current average) Total power dissipation Tamb Drain current Transfer admittance Feedback capacitance Noise figure optimum source admittance typ. typ. typ. typ. min. IDSS min. max. Ptot max. BF410A max. max.
December 1990
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
RATINGS Limiting values accordance with Absolute Maximum System (IEC 134) Drain-source voltage Drain-gate voltage (open source) Drain current average) Gate current Total power dissipation Tamb Storage temperature range Junction temperature THERMAL RESISTANCE From junction ambient free STATIC CHARACTERISTICS Tamb Gate cut-off current -VGS Gate-drain breakdown voltage Drain current Gate-source cut-off voltage -V(P)GS typ. IDSS min. max. -V(BR)GDO min. -IGSS max. BF410A VDGO Ptot Tstg
BF410A
max. max. max. max. max. max.
+150
December 1990
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
DYNAMIC CHARACTERISTICS Measuring conditions (common source): y-parameters (common source) Input capacitance Input conductance Feedback capacitance Transfer admittance instead Transfer admittance Output capacitance Output conductance Output conductance Noise figure optimum source admittance typ. max. typ. typ. max. min. min. typ. max. max. typ.
BF410A
Tamb BF410A Tamb BF410C BF410A
handbook, halfpage
MDA277
handbook, halfpage
(pF)
|yfs|
MDA278
BF410D BF410C
(mA/V)
BF410B
BF410A
(mA)
Fig.2
BF410A BF410B; BF410C BF410D; MHz; Tamb
Fig.3 kHz; Tamb typical values.
December 1990
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; leads (on-circle)
BF410A
SOT54 variant
scale
DIMENSIONS original dimensions) UNIT Notes Terminal dimensions within this zone uncontrolled allow flow plastic terminal irregularities. OUTLINE VERSION SOT54 variant REFERENCES JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-04-14 0.48 0.40 0.66 0.56 0.45 0.40 2.54 1.27 14.5 12.7 L1(1)
December 1990
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values
BF410A
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications. data this specification extracted from full data sheet with same type number title. detailed information relevant data sheet data handbook.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
December 1990

BF410A N-channel silicon field-effect transistors Product specifi

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