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Organization Bits Single Power Supply Operationally Compatible With Ex
Top Searches for this datasheetTMS27C020 262144 8-BIT ERASABLE TMS27PC020 262144 8-BIT PROGRAMMABLE READ-ONLY MEMORIES Organization Bits Single Power Supply Operationally Compatible With Existing Megabit EPROMs Industry Standard 32-Pin Dual-In-line Package 32-Lead Plastic Leaded Chip Carrier Inputs Outputs Fully Compatible ±10% Tolerance Access Cycle Time '27C/ PC020-10 '27C/ PC020-12 '27C/ PC020-15 '27C/ PC020-20 '27C/ PC020-25 8-Bit Output Microprocessor-Based Systems Very High-Speed SNAP! Pulse Programming Power Saving CMOS Technology 3-State Output Buffers Minimum Noise Immunity With Standard Loads Latchup Immunity Input Output Pins Pullup Resistors Required Power Dissipation (VCC Active Worst Case Standby 0.55 Worst Case (CMOS-Input Levels) Temperature Range Options PACKAGE VIEW TMS27PC020 PACKAGE VIEW description TMS27C020 series 8-bit 152-bit), ultraviolet (UV) light erasable, electrically programmable read-only memories (EPROMs). TMS27PC020 series one-time programmable (OTP) electrically programmable read-only memories (PROMs). NOMENCLATURE Address Inputs Inputs (programming) Outputs Chip Enable Output Enable Ground Program Power Supply 13-V Power Supply Only program mode Please aware that important notice concerning availability, standard warranty, critical applications Texas Instruments semiconductor products disclaimers thereto appears this data sheet. Copyright 1997, Texas Instruments Incorporated PRODUCTION DATA information current publication date. Products conform specifications terms Texas Instruments standard warranty. Production processing does necessarily include testing parameters. POST OFFICE 1443 HOUSTON, TEXAS 77251-1443 TMS27C020 262144 8-BIT ERASABLE TMS27PC020 262144 8-BIT PROGRAMMABLE READ-ONLY MEMORIES description (continued) These devices fabricated using power-saving CMOS technology high speed simple interface with bipolar circuits. inputs including program data inputs) driven Series circuits without external pullup resistors. Each output drive Series circuit without external resistors. TMS27C020 EPROM offered dual-in-line ceramic package suffix) designed insertion mounting hole rows 15,2-mm (600-mil) centers. TMS27C020 also offered with choices temperature ranges 70°C suffix) 40°C 85°C suffix). Table TMS27PC020 offered 32-lead plastic leaded chip carrier using 1,25 mil) lead spacing suffix). TMS27PC020 offered with choices temperature ranges 70°C (FML suffix) 40°C 85°C (FME suffix). Table Table Temperature Range Suffixes SUFFIX OPERATING TEMPERATURE RANGES 70°C TMS27C040-XXX TMS27PC040-XXX 85°C FUNCTION These EPROMs operate from single supply read mode), they ideal microprocessor-based systems. other supply needed programming. programming signals level. programming outside system, existing EPROM programmers used. operation seven modes operation TMS27C020 TMS27PC020 listed Table read mode requires single supply. inputs level except during programming signature mode. Table Operation Modes MODE FUNCTION READ OUTPUT DISABLE STANDBY PROGRAMMING VERIFY PROGRAM INHIBIT SIGNATURE MODE CODE Data Hi-Z Hi-Z Data Data Hi-Z DEVICE POST OFFICE 1443 HOUSTON, TEXAS 77251-1443 TMS27C020 262144 8-BIT ERASABLE TMS27PC020 262144 8-BIT PROGRAMMABLE READ-ONLY MEMORIES read/ output disable When outputs more TMS27C020s TMS27PC020s connected parallel same bus, output particular device circuit read with interference from competing outputs other devices. read output single device, level signal applied pins. other devices circuit should have their outputs disabled applying high level signal these pins. latchup immunity Latchup immunity TMS27C020 TMS72PC020 minimum inputs outputs. This feature provides latchup immunity beyond potential transients P.C. board level when EPROM interfaced industry standard logic devices. input output layout approach controls latchup without compromising performance packing density. power down Active supply current reduced from applying high input applying high CMOS input this mode outputs high-impedance state. erasure Before programming, TMS27C020 erased exposing chip through transparent high intensity ultraviolet light (wavelength 2537 recommended minimum exposure dose intensity exposure time) 15-Ws cm2. typical 12-mW cm2, filterless lamp erases device minutes. lamp should located about above chip during erasure. After erasure, bits high state. should noted that normal ambient light contains correct wavelength erasure. Therefore, when using TMS27C020, window should covered with opaque label. After erasure (all bits logic high state), logic lows programmed into desired locations. programmed erased only ultraviolet light. SNAP! Pulse programming TMS27C020 TMS27PC020 programmed using SNAP! Pulse programming algorithm, illustrated flowchart Figure which programs nominal time twenty-six seconds. Actual programming time varies function programmer used. SNAP! Pulse programming algorithm uses initial pulse microseconds (µs) followed byte verification determine when addressed byte been successfully programmed. 100-µs pulses byte provided before failure recognized. programming mode achieved when equals VIL, VIH. Data presented parallel (eight bits) pins through DQ7. Once addresses data stable, pulsed low. More than device programmed when devices connected parallel. Locations programmed order. When SNAP! Pulse programming routine complete, bits verified with 10%. program inhibit Programming inhibited maintaining high level input pins. program verify Programmed bits verified with equals when VIL, VIL, VIH. signature mode signature mode provides access binary code identifying manufacturer type. This mode activated when (pin forced identifier bytes accessed toggling other addresses must held low. signature code TMS27C020 9732. selects manufacturer's code Hex), high selects device code Hex), shown Table POST OFFICE 1443 HOUSTON, TEXAS 77251-1443 TMS27C020 262144 8-BIT ERASABLE TMS27PC020 262144 8-BIT PROGRAMMABLE READ-ONLY MEMORIES signature mode (continued) Table Signature Mode IDENTIFIER MANUFACTURER CODE PINS DEVICE CODE VIL, VIL, VIL, VCC. POST OFFICE 1443 HOUSTON, TEXAS 77251-1443 TMS27C020 262144 8-BIT ERASABLE TMS27PC020 262144 8-BIT PROGRAMMABLE READ-ONLY MEMORIES Start Address First Location 0.25 0.25 Program Pulse Increment Address Program Mode Last Address? Address First Location Program Pulse Increment Address Verify Byte Fail X=X+1 Interactive Mode Pass Last Address? Device Failed Compare Bytes Original Data Pass Device Passed Fail Final Verification Figure SNAP! Pulse Programming Flowchart POST OFFICE 1443 HOUSTON, TEXAS 77251-1443 TMS27C020 262144 8-BIT ERASABLE TMS27PC020 262144 8-BIT PROGRAMMABLE READ-ONLY MEMORIES logic symbol EPROM [PWR DOWN] This symbol accordance with ANSI IEEE 91-1984 Publication 617-12. numbers package. POST OFFICE 1443 HOUSTON, TEXAS 77251-1443 TMS27C020 262144 8-BIT ERASABLE TMS27PC020 262144 8-BIT PROGRAMMABLE READ-ONLY MEMORIES absolute maximum ratings over operating free-air temperature range (unless otherwise noted) Supply voltage range, (see Note Supply voltage range, Input voltage range (see Note inputs except 13.5 Output voltage range, with respect (see Note Operating free-air temperature range ('27C020-_ '27PC020_ _FML) 70°C Operating free-air temperature range ('27C020-_ _JE, '27PC020-_ _FME) 40°C 85°C Storage temperature range, Tstg 65°C 150°C Stresses beyond those listed under "absolute maximum ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated under "recommended operating conditions" implied. Exposure absolute-maximum-rated conditions extended periods affect device reliability. NOTE voltage values with respect GND. recommended operating conditions Supply voltage Supply voltage High-level High level input voltage Low-level level input voltage Operating free-air temperature Operating free-air temperature Read mode (see Note SNAP! Pulse programming algorithm Read mode SNAP! Pulse programming algorithm CMOS CMOS '27C020-_ _JL, '27PC020-_ _FML '27C020-_ _JE, '27PC020-_ _FME 6.25 12.75 6.75 13.25 UNIT NOTE must applied before same time removed after same time VPP. device must inserted into removed from board when applied. electrical characteristics over full ranges operating conditions PARAMETER IPP1 IPP2 ICC1 High-level High level output voltage Low-level level output voltage Input current (leakage) Output current (leakage) supply current supply current (during program pulse) supply current (standby) TTL-input level CMOS-input level TEST CONDITIONS tcycle minimum cycle time, outputs open UNIT ICC2 supply current (active) Minimum cycle time maximum access time. POST OFFICE 1443 HOUSTON, TEXAS 77251-1443 TMS27C020 262144 8-BIT ERASABLE TMS27PC020 262144 8-BIT PROGRAMMABLE READ-ONLY MEMORIES capacitance over recommended ranges supply voltage operating free-air temperature, PARAMETER Input capacitance Output capacitance Capacitance measurements made sample basis only. typical values 25°C nominal voltages. TEST CONDITIONS UNIT switching characteristics over full ranges recommended operating conditions (see Notes PARAMETER Access time from address Access time from chip enable Output enable time from Output disable time from whichever occurs first Output data valid time after change address, whichever occurs Series load, Input Input TEST CONDITIONS '27C020-10 '27PC020-10 ta(A) '27C020-12 '27PC020-12 '27C020-15 '27PC020-15 27C020-20 27PC020-20 '27C020-25 '27PC020-25 UNIT ta(E) ten(G) tdis tv(A) Value calculated from 0.5-V delta measured output level. This parameter sampled 100% tested. NOTES: switching characteristics, input pulse levels Timing measurements made logic high logic low. (See Figure Common test conditions apply tdis except during programming. POST OFFICE 1443 HOUSTON, TEXAS 77251-1443 TMS27C020 262144 8-BIT ERASABLE TMS27PC020 262144 8-BIT PROGRAMMABLE READ-ONLY MEMORIES switching characteristics programming: (SNAP! Pulse), 25°C (see Note PARAMETER tdis(G) ten(G) Output disable time from Output enable time from UNIT NOTE switching characteristics input pulse levels Timing measurements made logic high logic (See Figure timing requirements programming tw(PGM) tsu(A) tsu(E) tsu(G) tsu(D) tsu(VPP) tsu(VCC) th(A) th(D) Pulse duration, program Setup time, address Setup time, Setup time, Setup time, data Setup time, Setup time, Hold time, address Hold time, data SNAP! Pulse programming algorithm UNIT POST OFFICE 1443 HOUSTON, TEXAS 77251-1443 TMS27C020 262144 8-BIT ERASABLE TMS27PC020 262144 8-BIT PROGRAMMABLE READ-ONLY MEMORIES PARAMETER MEASUREMENT INFORMATION 2.08 Output Under Test (see Note NOTES: includes probe fixture capacitance. testing inputs driven logic high logic low. Timing measurements made logic high logic both inputs outputs. Figure Testing Output Load Circuit Waveform Addresses Valid ta(A) ta(E) ten(G) Hi-Z tdis tv(A) Output Valid Hi-Z Figure Read-Cycle Timing POST OFFICE 1443 HOUSTON, TEXAS 77251-1443 TMS27C020 262144 8-BIT ERASABLE TMS27PC020 262144 8-BIT PROGRAMMABLE READ-ONLY MEMORIES PARAMETER MEASUREMENT INFORMATION Verify Program tsu(A) Data-In Stable tsu(D) tsu(VPP) tsu(VCC) tsu(E) tsu(G) tw(PGM) tdis(G) ten(G) characteristics device must accommodated programmer. 13-V 6.5-V SNAP! Pulse programming. ten(G) th(D) Address Stable th(A) Data-Out Valid tdis(G) Address Figure Program-Cycle Timing (SNAP! Pulse Programming) POST OFFICE 1443 HOUSTON, TEXAS 77251-1443 TMS27C020 262144 8-BIT ERASABLE TMS27PC020 262144 8-BIT PROGRAMMABLE READ-ONLY MEMORIES (R-PQCC-J32) PLASTIC J-LEADED CHIP CARRIER Seating Plane 0.004 (0,10) 0.140 (3,56) 0.132 (3,35) 0.495 (12,57) 0.485 (12,32) 0.453 (11,51) 0.447 (11,35) 0.129 (3,28) 0.123 (3,12) 0.049 (1,24) 0.043 (1,09) 0.008 (0,20) 0.020 (0,51) 0.015 (0,38) 0.595 (15,11) 0.585 (14,86) 0.553 (14,05) 0.547 (13,89) 0.030 (0,76) 0.050 (1,27) 4040201-4 03/95 NOTES: linear dimensions inches (millimeters). This drawing subject change without notice. Falls within JEDEC MS-016 POST OFFICE 1443 HOUSTON, TEXAS 77251-1443 TMS27C020 262144 8-BIT ERASABLE TMS27PC020 262144 8-BIT PROGRAMMABLE READ-ONLY MEMORIES (R-CDIP-T**) SHOWN CERAMIC SIDE-BRAZE DUAL-IN-LINE PACKAGE 0.065 (1,65) 0.045 (1,14) 0.090 (2,29) 0.060 (1,53) Lens Protrusion 0.010 (0,25) 0.175 (4,45) 0.140 (3,56) 0.018 (0,46) Seating Plane 0.125 (3,18) 0.100 (2,54) 0.022 (0,56) 0.014 (0,36) 0.012 (0,30) 0.008 (0,20) PINS** NARR WIDE NARR 0.624(15,85) 0.624(15,85) 0.590(14,99) 0.590(14,99) 1.265(32,13) 1.265(32,13) 1.235(31,37) 1.235(31,37) 0.541(13,74) 0.598(15,19) 0.514(13,06) 0.571(14,50) WIDE NARR 0.624(15,85) 0.624(15,85) 0.590(14,99) 0.590(14,99) 1.465(37,21) 1.465(37,21) 1.435(36,45) 1.435(36,45) 0.541(13,74) 0.598(15,19) 0.514(13,06) 0.571(14,50) WIDE NARR 0.624(15,85) 0.624(15,85) 0.590(14,99) 0.590(14,99) 1.668(42,37) 1.668(42,37) 1.632(41,45) 1.632(41,45) 0.541(13,74) 0.598(15,19) 0.514(13,06) 0.571(14,50) WIDE 0.624(15,85) 0.624(15,85) 0.590(14,99) 0.590(14,99) 2.068(52,53) 2.068(52,53) 2.032(51,61) 2.032(51,61) 0.541(13,74) 0.598(15,19) 0.514(13,06) 0.571(14,50) 4040084 04/95 NOTES: linear dimensions inches (millimeters). This drawing subject change without notice. This package hermetically sealed with ceramic using glass frit. Index point provided terminal identification only press ceramic glass frit seal only. POST OFFICE 1443 HOUSTON, TEXAS 77251-1443 TMS27C020 262144 8-BIT ERASABLE TMS27PC020 262144 8-BIT PROGRAMMABLE READ-ONLY MEMORIES POST OFFICE 1443 HOUSTON, TEXAS 77251-1443 IMPORTANT NOTICE Texas Instruments subsidiaries (TI) reserve right make changes their products discontinue product service without notice, advise customers obtain latest version relevant information verify, before placing orders, that information being relied current complete. products sold subject terms conditions sale supplied time order acknowledgement, including those pertaining warranty, patent infringement, limitation liability. warrants performance semiconductor products specifications applicable time sale accordance with TI's standard warranty. Testing other quality control techniques utilized extent deems necessary support this warranty. Specific testing parameters each device necessarily performed, except those mandated government requirements. CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS INVOLVE POTENTIAL RISKS DEATH, PERSONAL INJURY, SEVERE PROPERTY ENVIRONMENTAL DAMAGE ("CRITICAL APPLICATIONS"). SEMICONDUCTOR PRODUCTS DESIGNED, AUTHORIZED, WARRANTED SUITABLE LIFE-SUPPORT DEVICES SYSTEMS OTHER CRITICAL APPLICATIONS. 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