M3D100 BD329 power transistor Product specification Supersed

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M3D100 BD329 power transistor Product specification Supersed

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book, halfpage
M3D100
BD329 power transistor
Product specification Supersedes data September 1994 File under Discrete Semiconductors, SC04 1997
Philips Semiconductors
Product specification
power transistor
FEATURES High current (max. voltage (max. APPLICATIONS Especially battery equipped applications. DESCRIPTION power transistor TO-126; SOT32 plastic package. complement: BD330.
handbook, halfpage
BD329
PINNING emitter collector, connected metal part mounting surface base DESCRIPTION
view
MAM254
Fig.1
Simplified outline (TO-126; SOT32) symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCEO Ptot PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation current gain transition frequency open base CONDITIONS open emitter MIN. TYP. MAX. UNIT
1997
Philips Semiconductors
Product specification
power transistor
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO Ptot Tstg Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector MIN. MAX. +150 +150
BD329
UNIT
THERMAL CHARACTERISTICS SYMBOL j-mb Note Refer TO-126; SOT32 standard mounting conditions. PARAMETER thermal resistance from junction ambient thermal resistance from junction mounting base CONDITIONS note VALUE UNIT
1997
Philips Semiconductors
Product specification
power transistor
CHARACTERISTICS unless otherwise specified. SYMBOL ICBO IEBO PARAMETER collector cut-off current emitter cut-off current current gain CONDITIONS Fig.2 Fig.2 VCEsat collector-emitter saturation voltage base-emitter voltage transition frequency current gain ratio complementary pairs MIN. TYP.
BD329
MAX.
UNIT
handbook, full pagewidth
MGD844
10-1
(mA)
Fig.2 current gain; typical values.
1997
Philips Semiconductors
Product specification
power transistor
PACKAGE OUTLINE
BD329
Plastic single-ended leaded (through hole) package; mountable heatsink, mounting hole; leads SOT32
scale
DIMENSIONS original dimensions) UNIT 0.88 0.65 0.60 0.45 11.1 10.5 4.58 2.29 16.5 15.3 L1(1) 2.54 0.254
Note Terminal dimensions within this zone uncontrolled allow flow plastic terminal irregularities. OUTLINE VERSION SOT32 REFERENCES JEDEC TO-126 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-03-04
1997
Philips Semiconductors
Product specification
power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BD329
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1997
Philips Semiconductors
Product specification
power transistor
NOTES
BD329
1997
Philips Semiconductors worldwide company
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other countries apply Philips Semiconductors, Marketing Sales Communications, Building BE-p, P.O. 218, 5600 EINDHOVEN, Netherlands, Fax. 24825 Philips Electronics N.V. 1997
Internet:
SCA53
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
117047/00/02/pp8
Date release: 1997
Document order number:
9397 01901

M3D100 BD329 power transistor Product specification Supersed

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