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S amHop Microelectronics C orp. F eb, 25 2005 V er1.1

Dual N-C hannel E nhancement Mode Field E ffect Transistor

S amHop Microelectronics C orp. F eb, 25 2005 V er1.1
Dual N-C hannel E nhancement Mode Field E ffect Transistor
R DS (ON)
S uper high dense cell design for low R DS (ON ).
R ugged and reliable. TS OP 6 package.
TS OP 6 Top View
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a R thJA 125 C / W
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS
S ymbol
Condition
Min Typ C Max Unit
20 1 100 0.5 0.8 65 90 6 7 220 67 50 1.5 80 110 V uA nA V
m-ohm m-ohm
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance
DYNAMIC CHAR ACTE R IS TICS c
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Q gs Q gd
Parameter
Diode Forward Voltage
S ymbol
Condition
Min Typ Max Unit
0.84 1.2 V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
ID , Drain C urrent(A)
I D , Drain C urrent (A)
V DS , Drain-to-S ource Voltage (V )
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
F igure 2. Trans fer C haracteris tics
R DS (ON) , On-R es is tance Normalized
C , C apacitance (pF )
V DS , Drain-to S ource Voltage (V )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with Temperature
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
T j, J unction T emperature ( C )
with T emperature
F igure 6. B reakdown V oltage V ariation with T emperature
gF S , T rans conductance (S )
Is , S ource-drain current (A)
I DS , Drain-S ource C urrent (A)
V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation with Drain C urrent
I D , Drain C urrent (A)
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
Qg, T otal G ate C harge (nC )
V DS , Drain-S ource V oltage (V )
F igure 9. G ate C harge
F igure 10. Maximum S afe O perating Area
V DD ton toff tr
td(on) V OUT
td(off)
P ULS E WIDTH
F igure 11. S witching T es t C ircuit
F igure 12. S witching Waveforms
Normalized Transient
Thermal Resistance
Single Pulse 0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
TSOP6 Tape and Reel Data
TSOP6 Carrier Tape
TSOP6 Reel