HBF421 EPITAXIAL PLANAR TRANSISTOR Description Video B-

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HBF421 EPITAXIAL PLANAR TRANSISTOR Description Video B-

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Spec. HA200214 Issued Date 2002.08.01 Revised Date 2004.06.18 Page
HBF421
EPITAXIAL PLANAR TRANSISTOR
Description
Video B-class Power stages TV-receivers TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) Maximum Voltages Currents (Ta=25°C) VCBO Collector Base Voltage -300 VCEO Collector Emitter Voltage -300 VEBO Emitter Base Voltage Collector Current Peak Base Current Peak Collector Current -100
Electrical Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE Min. -300 -300 Typ. Max. -100 -100 -0.6 Unit IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-200V, IE=0 VEB=-5V, IE=0 IC=-30mA, IB=-3mA VCE=-20V, IC=-25mA IE=-10mA, VCE=-10V, f=100MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Test Conditions
HBF421
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000
1000 VCE(sat) IC=6IB
Spec. HA200214 Issued Date 2002.08.01 Revised Date 2004.06.18 Page
Saturation Voltage Collector Current
VCE=20V
Saturation Voltage (mV)
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
1000 VCE(sat) IC=10IB 1000
Saturation Voltage Collector Current
Saturation Voltage (mV)
Saturation Voltage (mV)
VBE(s IC=10IB
Collector Current-IC (mA)
Collector Current-IC (mA)
Capacitance Reverse-Biased Voltage
PD(W), Power Dissipation
Capacitance (pF)
Reverse Biased Voltage
Ambient Temperature-Ta
HBF421
HSMC Product Specification
TO-92 Dimension
Spec. HA200214 Issued Date 2002.08.01 Revised Date 2004.06.18 Page
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Control Code
Date Code
Note: Green label used pb-free packing
Style: 1.Emitter 2.Collector 3.Base Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 4.33 4.33 12.70 0.36 3.36 0.36
Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27
Typical, Unit:
3-Lead TO-92 Plastic Package HSMC Package Code:
TO-92 Taping Dimension
F1,F2 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00
Unit:
F1F2
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HBF421 HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HA200214 Issued Date 2002.08.01 Revised Date 2004.06.18 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 100oC 150oC 60~120 <3oC/sec 183oC 60~150 240oC +0/-5oC 10~30 <6oC/sec minutes
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 <3oC/sec 217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature
Dipping time 5sec ±1sec 5sec ±1sec
+0/-5
HBF421
HSMC Product Specification

HBF421 EPITAXIAL PLANAR TRANSISTOR Description Video B-

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