Werte Maximum rated values Elektrische Eigenschaften Electrical p

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1200 KF2_B5
Werte Maximum rated values
Elektrische Eigenschaften Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral Diode value, Diode Spitzenverlustleistung Diode maximum power dissipation diode insulation test voltage Teilentladungs-Aussetzspannung partial discharge extinction voltage 25°C -25°C 80°C 80°C VCES VCES IC,nom. ICRM 3300 3300 1200 2000 2400
C=25°C, Transistor
Ptot
14,7
VGES
1200
IFRM
2400
10ms, 125°C
125°C
PRQM
1200
RMS, min.
VISOL
10,2
RMS, typ. 10pC (acc. 1287)
VISOL
Charakteristische Werte Characteristic values
Transistor Transistor
Kollektor-Emitter collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage input capacitance reverse transfer capacitance Gateladung gate charge Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current 1200A, 15V, 25°C 1200A, 15V, 125°C VGE, 25°C VGE(th)
min.
typ.
3,40 4,30
max.
4,25 5,00
1MHz, 25°C, 25V,
Cies
1MHz, 25°C, 25V,
Cres
-15V
3300V, 25°C
ICES
20V, 25°C
IGES
prepared Alfons Wiesenthal approved Christoph
date publication 2002-10-31 revision:
DB_FZ1200R33KF2 B5_2.0.xls
1200 KF2_B5
Charakteristische Werte Characteristic values
Transistor Transistor
(ind. Last) turn delay time (inductive load) 1200 1800V ±15V, 220nF, 25°C ±15V, 220nF, 125°C Anstiegszeit (induktive Last) rise time (inductive load) 1200 1800V ±15V, 220nF, 25°C ±15V, 220nF, 125°C (ind. Last) turn delay time (inductive load) 1200 1800V ±15V, 220nF, 25°C ±15V, 220nF, 125°C Fallzeit (induktive Last) fall time (inductive load) 1200 1800V ±15V, 220nF, 25°C ±15V, 220nF, 125°C Einschaltverlustenergie Puls turn-on energy loss pulse Abschaltverlustenergie Puls turn-off energy loss pulse Data stray inductance module Modul-Leitungswiderstand, Chip lead resistance, terminals chip 25°C 1200 1800V, 125°C, 40nH 1200 1800V, 125°C, 40nH 10µsec, Vj125°C, VCC=2500V, VCEmax=VCES -LsCE LsCE 6000 Eoff 1600 2900 0,20 0,20 td,off 1,90 2,10 0,45 0,48 td,on 0,70 0,65
min.
typ.
max.
RCC'+EE'
0,12
Charakteristische Werte Characteristic values
Diode Diode
forward voltage peak reverse recovery current 1200 25°C 1200 125°C 1200 diF/dt 4600 A/µsec 1800V, -10V, 25°C 1800V, -10V, 125°C recovered charge 1200 diF/dt 4600 A/µsec 1800V, -10V, 25°C 1800V, -10V, 125°C Abschaltenergie Puls reverse recovery energy 1200 diF/dt 4600 A/µsec 1800V, -10V, 25°C 1800V, -10V, 125°C Erec 1400 1320 1250 1350
min.
typ.
2,80 2,80
max.
3,50 3,50
DB_FZ1200R33KF2 B5_2.0.xls
1200 KF2_B5
Thermische Eigenschaften Thermal properties
min.
Innerer thermal resistance, junction case thermal resistance, case heatsink Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor transistor, Diode/Diode, Modul module Paste W/m*K grease W/m*K RthCK RthJC
typ.
0,006
max.
0,0085 0,0170
Mechanische Eigenschaften Mechanical properties
siehe Anlage case, appendix Material Modulgrundplatte material module baseplate Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance comperative tracking index Anzugsdrehmoment mech. Befestigung mounting torque Anzugsdrehmoment elektr. terminal connection torque Gewicht weight Schraube screw terminals terminals 4,25 1400 AlSiC
5,75
dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. gilt Verbindung Technischen This technical information specifies semiconductor devices promises characteristics. valid combination with belonging technical notes.
DB_FZ1200R33KF2 B5_2.0.xls
1200 KF2_B5
Daten preliminary data Ausgangskennlinie (typisch) Output characteristic (typical) (VCE)
2400
2000
25°C 125°C
1600
1200
Ausgangskennlinienfeld (typisch) Output characteristic (typical)
2400
(VCE)
125°C
2000
1600
1200
DB_FZ1200R33KF2 B5_2.0.xls
1200 KF2_B5
Daten preliminary data (typisch) Transfer characteristic (typical) (VGE)
2400
25°C 125°C
2000
1600
1200
Inversdiode (typisch) Forward characteristic inverse diode (typical)
2400
25°C
(VF)
2000
125°C
1600
1200
DB_FZ1200R33KF2 B5_2.0.xls
1200 KF2_B5
Daten preliminary data (IC) Eoff (IC) Erec (IC)
Tvj=125°C, 1800V, VGE=±15V, RGon RGoff
Schaltverluste (typisch) Switching losses (typical)
10000 9000 8000 7000 [mJ] 6000 5000 4000 3000 2000 1000
Eoff Erec
1200
1500
1800
2100
2400
Schaltverluste (typisch) Switching losses (typical)
12000
Eoff Erec
(RG) Eoff (RG) Erec (RG)
125°C, 1200 1800V ±15V, 220nF
10000
8000 [mJ]
6000
4000
2000
DB_FZ1200R33KF2 B5_2.0.xls
1200 KF2_B5
±15V, RG,off 1,8, Tvj= 125°C
Sicherer Arbeitsbereich IGBT (RBSOA) Reverse bias safe operation area IGBT (RBSOA)
3000
2400
1800
1200
IC,Modul IC,Chip
1000 1500 2000 2500 3000 3500
Sicherer Arbeitsbereich Diode (SOA) safe operation area Diode (SOA)
3000
Tvj= 125°C
2400
1800
1200
1000 1500 2000 2500 3000 3500
DB_FZ1200R33KF2 B5_2.0.xls
1200 KF2_B5
Daten preliminary data Transienter Transient thermal impedance
thJC
Zth: IGBT Zth: Diode
0,01
ZthJC
0,001
0,0001 0,001
0,01
[sec]
[K/kW] IGBT [sec] IGBT [K/kW] Diode [sec]
Diode
3,83 0,03 7,65 0,03
2,13 0,10 4,25 0,10
0,51 0,30 1,02 0,30
2,04 1,00 4,08 1,00
DB_FZ1200R33KF2 B5_2.0.xls
1200 KF2_B5
Abmessungen extenal dimensions
DB_FZ1200R33KF2 B5_2.0.xls

Werte Maximum rated values Elektrische Eigenschaften Electrical p

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